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IPL65R650C6SATMA1

IPL65R650C6SATMA1
Mfr. #:
IPL65R650C6SATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 650V 6.7A ThinPAK 5x6
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPL65R650C6SATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPL65R650C6SATMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
ThinPAK-56-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
650 V
Идентификатор - үздіксіз төгу тогы:
6.7 A
Rds On - ағызу көзіне қарсылық:
650 mOhms
Vgs th - Gate-Source шекті кернеуі:
3 V
Vgs - Шлюз көзі кернеуі:
30 V
Qg - қақпа заряды:
21 nC
Ең төменгі жұмыс температурасы:
- 40 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
56.8 W
Конфигурация:
Бойдақ
Сауда атауы:
CoolMOS
Қаптама:
Ролик
Биіктігі:
1.1 mm
Ұзындығы:
6 mm
Серия:
CoolMOS C6
Транзистор түрі:
1 N-Channel
Ені:
5 mm
Бренд:
Infineon Technologies
Күз уақыты:
13 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
9 ns
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
80 ns
Қосудың әдеттегі кешігу уақыты:
12 ns
Бөлім # Бүркеншік аттар:
IPL65R650C6S SP001163082
Бірлік салмағы:
0.002677 oz
Tags
IPL65R6, IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 6.7A 8-Pin Thin-PAK EP T/R
***et
Trans MOSFET N-CH 700V 6.7A 5-Pin TPAK T/R
***ineon SCT
The new CoolMOS™ ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs, PG-TSON-8, RoHS
***ineon
The new CoolMOS ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. | Summary of Features: Small footprint (5x6mm); Low profile (1mm); Low parasitic inductance; RoHS compliant; Halogen free mold compound | Benefits: Reduced board space consumption; Increased power density; Short commutation loop; Easy to use products; Environmentally friendly | Target Applications: Adapter; Consumer; Lighting
*** Source Electronics
Trans MOSFET N-CH 650V 7.3A 3-Pin(2+Tab) DPAK T/R / 650V CoolMOS C6 Power Transistor
*** Stop Electro
Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ure Electronics
Single N-Channel 600 V 600 mOhm 20.5 nC CoolMOS™ Power Mosfet - TO-252-3
***roFlash
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ment14 APAC
MOSFET,N CH,600V,7.3A,TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.3A; Power Dissipation Pd:63W; Voltage Vgs Max:30V
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ark
Mosfet Transistor, N Channel, 7 A, 600 V, 0.59 Ohm, 10 V, 4 V Rohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.59 Ohm, 7 A, FDmesh(TM) II Power MOSFET (with fast diode) DPAK
***r Electronics
Power Field-Effect Transistor, 7A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ure Electronics
N-Channel 600 V 650 mOhm 12 nC CoolMOS™ P6 Power Transistor - ThinPAK 5x6
***ark
Mosfet, N-Ch, 600V, 6.7A, Tson; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.59Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes |Infineon IPL60R650P6SATMA1
***ineon
The new CoolMOS ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. | Summary of Features: Small footprint (5x6mm); Low profile (1mm); Low parasitic inductance; RoHS compliant; Halogen free mold compound | Benefits: Reduced board space consumption; Increased power density; Short commutation loop; Easy to use products; Environmentally friendly | Target Applications: Adapter; Consumer; Lighting
***icroelectronics
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package
*** Electronics
STMICROELECTRONICS STD11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
***ark
MOSFET, N-CH, 650V, 7A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Qualification:-RoHS Compliant: Yes
***nell
MOSFET, N CHANNEL, 650V, 7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 85W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
***icroelectronics
N-channel 650 V, 0.56 Ohm typ., 7 A MDmesh M5 Power MOSFET in DPAK package
***ark
MOSFET, N CH, 650V, 7A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7A; On Resistance Rds(on):0.56ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
***SIT Distribution GmbH
Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Бөлім № Mfg. Сипаттама Қор Бағасы
IPL65R650C6SATMA1
DISTI # IPL65R650C6SATMA1-ND		Infineon Technologies AGMOSFET N-CH 8TSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.6806
IPL65R650C6SATMA1
DISTI # IPL65R650C6SATMA1		Infineon Technologies AGTrans MOSFET N-CH 700V 6.7A 5-Pin TPAK T/R - Tape and Reel (Alt: IPL65R650C6SATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.6189
  • 30000:$0.6299
  • 20000:$0.6519
  • 10000:$0.6759
  • 5000:$0.7019
IPL65R650C6SATMA1
DISTI # SP001163082		Infineon Technologies AGTrans MOSFET N-CH 700V 6.7A 5-Pin TPAK T/R (Alt: SP001163082)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€0.5789
  • 30000:€0.6239
  • 20000:€0.6759
  • 10000:€0.7379
  • 5000:€0.9019
IPL65R650C6SATMA1
DISTI # 726-IPL65R650C6SATMA		Infineon Technologies AGMOSFET N-Ch 650V 6.7A ThinPAK 5x6
RoHS: Compliant		2480
  • 1:$1.6000
  • 10:$1.3600
  • 100:$1.0400
  • 500:$0.9270
  • 1000:$0.7320
  • 5000:$0.6490
  • 10000:$0.6240
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OMO.#: OMO-551SDCGI8-INTEGRATED-DEVICE-TECH

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Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1985
Саны енгізіңіз:
IPL65R650C6SATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,60 $
1,60 $
10
1,36 $
13,60 $
100
1,04 $
104,00 $
500
0,93 $
463,50 $
1000
0,73 $
732,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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