IPB80N06S2LH5ATMA4

IPB80N06S2LH5ATMA4
Mfr. #:
IPB80N06S2LH5ATMA4
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-CHANNEL_55/60V
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPB80N06S2LH5ATMA4 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB80N06S2LH5ATMA4 DatasheetIPB80N06S2LH5ATMA4 Datasheet (P4-P6)IPB80N06S2LH5ATMA4 Datasheet (P7-P8)
ECAD Model:
Көбірек ақпарат:
IPB80N06S2LH5ATMA4 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TO-263-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Конфигурация:
Бойдақ
Біліктілік:
AEC-Q101
Қаптама:
Ролик
Биіктігі:
4.4 mm
Ұзындығы:
10 mm
Транзистор түрі:
1 N-Channel
Ені:
9.25 mm
Бренд:
Infineon Technologies
Өнім түрі:
MOSFET
Зауыттық буманың саны:
1000
Ішкі санат:
MOSFETs
Бөлім # Бүркеншік аттар:
IPB80N06S2L-H5 SP001058126
Бірлік салмағы:
0.139332 oz
Tags
IPB80N06S2L, IPB80N06S2, IPB80N06, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N-CH 55V 80A TO263-3
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Бөлім № Mfg. Сипаттама Қор Бағасы
IPB80N06S2LH5ATMA4
DISTI # V72:2272_06383493
Infineon Technologies AGTrans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
    IPB80N06S2LH5ATMA4
    DISTI # V36:1790_06383493
    Infineon Technologies AGTrans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    0
    • 1000:$1.4550
    IPB80N06S2LH5ATMA4
    DISTI # IPB80N06S2LH5ATMA4-ND
    Infineon Technologies AGMOSFET N-CH 55V 80A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 1000:$1.3096
    IPB80N06S2LH5ATMA4
    DISTI # IPB80N06S2LH5ATMA4
    Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N06S2LH5ATMA4)
    Min Qty: 313
    Container: Bulk
    Americas - 0
    • 3130:$1.0159
    • 1565:$1.0339
    • 939:$1.0699
    • 626:$1.1109
    • 313:$1.1519
    IPB80N06S2LH5ATMA4
    DISTI # IPB80N06S2LH5ATMA4
    Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S2LH5ATMA4)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 10000:$1.4900
    • 4000:$1.5900
    • 6000:$1.5900
    • 2000:$1.6900
    • 1000:$1.7900
    IPB80N06S2LH5ATMA4
    DISTI # 726-IPB80N06S2LH5AT4
    Infineon Technologies AGMOSFET N-CHANNEL_55/60V
    RoHS: Compliant
    994
    • 1:$3.3000
    • 10:$2.8100
    • 100:$2.4300
    • 250:$2.3100
    • 500:$2.0700
    • 1000:$1.7400
    • 2000:$1.6600
    • 5000:$1.5900
    IPB80N06S2LH5ATMA4Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant
    10000
    • 1000:$1.0500
    • 500:$1.1100
    • 100:$1.1500
    • 25:$1.2000
    • 1:$1.3000
    Сурет Бөлім № Сипаттама
    STTH5R06GY-TR

    Mfr.#: STTH5R06GY-TR

    OMO.#: OMO-STTH5R06GY-TR

    Rectifiers Auto Turbo 2 AECQ101 5A 600VR 1.5VF 35ns
    IPD30N06S2L13ATMA4

    Mfr.#: IPD30N06S2L13ATMA4

    OMO.#: OMO-IPD30N06S2L13ATMA4

    MOSFET N-CHANNEL_55/60V
    IPD30N06S215ATMA2

    Mfr.#: IPD30N06S215ATMA2

    OMO.#: OMO-IPD30N06S215ATMA2

    MOSFET N-CHANNEL_55/60V
    BDP947H6327XTSA1

    Mfr.#: BDP947H6327XTSA1

    OMO.#: OMO-BDP947H6327XTSA1

    Bipolar Transistors - BJT AF TRANSISTORS
    IPD30N06S215ATMA2

    Mfr.#: IPD30N06S215ATMA2

    OMO.#: OMO-IPD30N06S215ATMA2-INFINEON-TECHNOLOGIES

    MOSFET N-CH 55V 30A TO252-3
    BDP947H6327XTSA1

    Mfr.#: BDP947H6327XTSA1

    OMO.#: OMO-BDP947H6327XTSA1-INFINEON-TECHNOLOGIES

    TRANS NPN 45V 3A SOT223
    C0402C102J5RAC7411

    Mfr.#: C0402C102J5RAC7411

    OMO.#: OMO-C0402C102J5RAC7411-1190

    CAP, 1000PF, 50V, MLCC, 0402
    IPD30N06S2L13ATMA4

    Mfr.#: IPD30N06S2L13ATMA4

    OMO.#: OMO-IPD30N06S2L13ATMA4-INFINEON-TECHNOLOGIES

    MOSFET N-CH 55V 30A TO252-3
    STTH5R06GY-TR

    Mfr.#: STTH5R06GY-TR

    OMO.#: OMO-STTH5R06GY-TR-STMICROELECTRONICS

    Rectifiers Auto Turbo 2 AECQ101 5A 600VR 1.5VF 35ns
    Қол жетімділік
    Қор:
    994
    Тапсырыс бойынша:
    2977
    Саны енгізіңіз:
    IPB80N06S2LH5ATMA4 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    3,30 $
    3,30 $
    10
    2,81 $
    28,10 $
    100
    2,43 $
    243,00 $
    250
    2,31 $
    577,50 $
    500
    2,07 $
    1 035,00 $
    -ден бастаңыз
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