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IRFB4020PBF

IRFB4020PBF
Mfr. #:
IRFB4020PBF
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IRFB4020PBF Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IRFB4020PBF Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-220-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
200 V
Идентификатор - үздіксіз төгу тогы:
18 A
Rds On - ағызу көзіне қарсылық:
100 mOhms
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
18 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
100 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Түтік
Биіктігі:
15.65 mm
Ұзындығы:
10 mm
Транзистор түрі:
1 N-Channel
Ені:
4.4 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
24 S
Күз уақыты:
6.3 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
12 ns
Зауыттық буманың саны:
1000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
16 ns
Қосудың әдеттегі кешігу уақыты:
7.8 ns
Бөлім # Бүркеншік аттар:
SP001564028
Бірлік салмағы:
0.211644 oz
Tags
IRFB4020P, IRFB402, IRFB40, IRFB4, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET; N Ch.; Digital Audio; 200V; 18A; 100 MOHM; 18 NC QG; TO-220AB; Pb-Free
***ineon SCT
200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 200 V 100 mOhm 29 nC HEXFET® Power Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Class D Audio; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 200V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:100W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4020; Current Id Max:18A; N-channel Gate Charge:18nC; Package / Case:TO-220AB; Power Dissipation Pd:100W; Power Dissipation Pd:100mW; Pulse Current Idm:52A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.9V; Voltage Vgs th Min:3V
***ure Electronics
Single N-Channel 150 V 0.082 Ohm 95 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***(Formerly Allied Electronics)
MOSFET, 150V, 21A, 70 mOhm, 63.3 nC Qg, TO-220AB
***p One Stop Global
Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 136 W
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 150V, 21A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:150V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:136W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:27A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.6°C/W; Package / Case:TO-220AB; Power Dissipation Pd:136W; Power Dissipation Pd:136W; Pulse Current Idm:108A; Termination Type:Through Hole; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ineon SCT
150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
***ure Electronics
Single N-Channel 150 V 95 mOhm 13 nC HEXFET® Power Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 150V 17A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 80 W
*** Stop Electro
Power Field-Effect Transistor, 17A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Class D Audio; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 150V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:150V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:80W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4019; Current Id Max:17A; N-channel Gate Charge:13nC; Package / Case:TO-220AB; Power Dissipation Pd:80W; Power Dissipation Pd:80mW; Pulse Current Idm:51A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.9V; Voltage Vgs th Min:3V
***ure Electronics
Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 200V 18A 3-Pin (3+Tab) TO-220AB
*** Stop Electro
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET TRANSISTOR N CH; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Package / Case:TO-220; Power Dissipation Pd:125W; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***(Formerly Allied Electronics)
MOSFET, 150V, 23A, 90 mOhm, 37 nC Qg, TO-220AB
***Yang
Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 23A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:150V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:136W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23A; Package / Case:TO-220AB; Power Dissipation Pd:136W; Power Dissipation Pd:136W; Pulse Current Idm:92A; Voltage Vds Typ:150V; Voltage Vgs th Max:5.5V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***ure Electronics
Single N-Channel 250 V 0.28 Ohms Flange Mount Power Mosfet - TO-220AB
*** Source Electronics
Trans MOSFET N-CH Si 250V 14A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 250V 14A TO-220AB
***ment14 APAC
MOSFET, N, 250V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:250V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Package / Case:TO-220AB; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:56A; Termination Type:Through Hole; Voltage Vds:250V; Voltage Vds Typ:250V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ser
MOSFETs 22a, 200V NCh MOSFET 0.125 Ohm
***i-Key
MOSFET N-CH 200V 22A TO-220AB
***Yang
PWR MOS ULTRAFET 22A/200V/0.125 OHM TO-220 - Bulk
***el Nordic
Contact for details
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Бөлім № Mfg. Сипаттама Қор Бағасы
IRFB4020PBF
DISTI # V99:2348_13889703		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube835
  • 1000:$0.5981
  • 500:$0.8251
  • 100:$0.9143
  • 10:$1.1111
  • 1:$1.2467
IRFB4020PBF
DISTI # IRFB4020PBF-ND		Infineon Technologies AGMOSFET N-CH 200V 18A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		12076In Stock
  • 1000:$0.8148
  • 500:$1.0320
  • 100:$1.3308
  • 10:$1.6840
  • 1:$1.9000
IRFB4020PBF
DISTI # 25093424		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube5007
  • 16:$0.6025
IRFB4020PBF
DISTI # 29513003		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube835
  • 500:$0.8251
  • 100:$0.9143
  • 12:$1.1111
IRFB4020PBF
DISTI # IRFB4020PBF		Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4020PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 17605
  • 1:$0.5719
  • 10:$0.5639
  • 25:$0.5559
  • 50:$0.5479
  • 100:$0.5279
  • 500:$0.5109
  • 1000:$0.5009
IRFB4020PBF
DISTI # SP001564028		Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB (Alt: SP001564028)
RoHS: Compliant
Min Qty: 1		Europe - 200
  • 1:€1.0959
  • 10:€1.0119
  • 25:€1.0099
  • 50:€1.0069
  • 100:€0.8729
  • 500:€0.7649
  • 1000:€0.5809
IRFB4020PBF
DISTI # IRFB4020PBF		Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB (Alt: IRFB4020PBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IRFB4020PBF
    DISTI # 61M6831    		Infineon Technologies AGMOSFET Transistor, N Channel, 18 A, 200 V, 100 mohm, 10 V, 4.9 V RoHS Compliant: Yes289
    • 1:$1.6300
    • 10:$1.3900
    • 100:$1.0700
    • 500:$0.9390
    • 1000:$0.7410
    • 2500:$0.6570
    IRFB4020PBF
    DISTI # 70017969    		Infineon Technologies AGMOSFET,N Ch.,Digital Audio,200V,18A,100 MOHM,18 NC QG,TO-220AB,Pb-Free
    RoHS: Compliant    		14
    • 1:$2.0400
    • 10:$1.8000
    • 100:$1.5700
    • 500:$1.3600
    • 1000:$1.2000
    IRFB4020PBF
    DISTI # 942-IRFB4020PBF    		Infineon Technologies AGMOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud
    RoHS: Compliant    		203
    • 1:$1.6300
    • 10:$1.3900
    • 100:$1.0700
    • 500:$0.9390
    • 1000:$0.7410
    • 2000:$0.6570
    IRFB4020PBFInfineon Technologies AGSingle N-Channel 200 V 100 mOhm 29 nC HEXFET Power Mosfet - TO-220-3
    RoHS: Compliant    		5185Tube
    • 15:$0.7600
    • 150:$0.6850
    • 1000:$0.5750
    IRFB4020PBFInternational Rectifier 
    RoHS: Not Compliant    		5
    • 1000:$0.6500
    • 500:$0.6800
    • 100:$0.7100
    • 25:$0.7400
    • 1:$0.7900
    IRFB4020PBF
    DISTI # 6886939P    		Infineon Technologies AGMOSFET N-CHANNEL 200V 18A HEXFET TO220AB, TU675
    • 25:£1.0100
    • 50:£0.8920
    • 100:£0.7740
    • 250:£0.7580
    IRFB4020PBF
    DISTI # 6886939    		Infineon Technologies AGMOSFET N-CHANNEL 200V 18A HEXFET TO220AB, PK215
    • 5:£1.2700
    • 25:£1.0100
    • 50:£0.8920
    • 100:£0.7740
    • 250:£0.7580
    IRFB4020PBF
    DISTI # IRFB4020PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,18A,100W,TO220AB29
    • 1:$1.4200
    • 3:$1.3400
    • 10:$1.0900
    • 100:$0.9800
    IRFB4020PBF
    DISTI # TMOSP12114    		Infineon Technologies AGN-CH 200V 18A 100mOhm TO220-3
    RoHS: Compliant    		Stock DE - 350Stock US - 0
    • 50:$1.0536
    • 150:$0.9934
    • 250:$0.9332
    • 600:$0.8429
    • 1000:$0.8128
    IRFB4020PBF
    DISTI # IRFB4020PBF    		Infineon Technologies AGN-Ch 200V 18A 100W 0,10R TO220AB
    RoHS: Compliant    		2630
    • 10:€0.9050
    • 50:€0.6650
    • 200:€0.6050
    • 500:€0.5825
    IRFB4020PBF
    DISTI # 1436954    		Infineon Technologies AGMOSFET, N, 200V, TO-220AB
    RoHS: Compliant    		396
    • 1:$2.5900
    • 10:$2.2000
    • 100:$1.7000
    • 500:$1.5000
    • 1000:$1.1800
    • 2000:$1.1800
    IRFB4020PBF
    DISTI # C1S327400131700    		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		2048
    • 500:$0.8520
    • 200:$0.9640
    • 100:$0.9740
    • 50:$1.0300
    • 10:$1.2600
    • 1:$2.0800
    IRFB4020PBF
    DISTI # C1S322000488535    		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		5007
    • 2000:$0.7680
    • 1000:$0.8280
    • 500:$1.0800
    • 100:$1.1700
    • 25:$1.4300
    • 5:$1.7600
    IRFB4020PBF
    DISTI # 1436954    		Infineon Technologies AGMOSFET, N, 200V, TO-220AB
    RoHS: Compliant    		319
    • 5:£1.0700
    • 25:£0.9470
    • 100:£0.8240
    • 250:£0.7740
    • 500:£0.7230
    IRFB4020PBF
    DISTI # XSLY00000000913    		INFINEON/IRTO-220AB
    RoHS: Compliant    		1440
    • 1100:$0.6429
    • 1440:$0.6000
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    		 MOSFET MOSFT 200V 65A 26mOhm 70nC Qg
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    		 Switching Controllers Voltage Mode w/Sync
    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    1986
    Саны енгізіңіз:
    IRFB4020PBF ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    1,62 $
    1,62 $
    10
    1,38 $
    13,80 $
    100
    1,06 $
    106,00 $
    500
    0,94 $
    469,50 $
    1000
    0,74 $
    741,00 $
    2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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