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IPL60R285P7AUMA1

IPL60R285P7AUMA1
Mfr. #:
IPL60R285P7AUMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET HIGH POWER_NEW
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPL60R285P7AUMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPL60R285P7AUMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
VSON-4
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
600 V
Идентификатор - үздіксіз төгу тогы:
13 A
Rds On - ағызу көзіне қарсылық:
218 mOhms
Vgs th - Gate-Source шекті кернеуі:
3 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
18 nC
Ең төменгі жұмыс температурасы:
- 40 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
59 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Ролик
Серия:
CoolMOS P7
Транзистор түрі:
1 N-Channel
Бренд:
Infineon Technologies
Күз уақыты:
8 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
5 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
55 ns
Қосудың әдеттегі кешігу уақыты:
10 ns
Бөлім # Бүркеншік аттар:
IPL60R285P7 SP001657424
Tags
IPL60R2, IPL60, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 285 mOhm 18 nC CoolMOS™ Power Mosfet - VSON-4
***ark
Mosfet, N-Ch, 600V, 13A, Vson; Transistor Polarity:n Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.218Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Бөлім № Mfg. Сипаттама Қор Бағасы
IPL60R285P7AUMA1
DISTI # V72:2272_18787587		Infineon Technologies AGHIGH POWER_NEW35
  • 75000:$1.0227
  • 30000:$1.0230
  • 15000:$1.0234
  • 6000:$1.0689
  • 3000:$1.1053
  • 1000:$1.1482
  • 500:$1.3761
  • 250:$1.4262
  • 100:$1.5793
  • 50:$1.6101
  • 25:$1.7890
  • 10:$1.9364
  • 1:$2.2370
IPL60R285P7AUMA1
DISTI # IPL60R285P7AUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 600V 4VSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		12In Stock
  • 1000:$1.3782
  • 500:$1.6633
  • 100:$2.1386
  • 10:$2.6610
  • 1:$2.9500
IPL60R285P7AUMA1
DISTI # IPL60R285P7AUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 600V 4VSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		12In Stock
  • 1000:$1.3782
  • 500:$1.6633
  • 100:$2.1386
  • 10:$2.6610
  • 1:$2.9500
IPL60R285P7AUMA1
DISTI # IPL60R285P7AUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 6000:$1.1996
  • 3000:$1.2458
IPL60R285P7AUMA1
DISTI # 26567287		Infineon Technologies AGHIGH POWER_NEW35
  • 6000:$1.1491
  • 3000:$1.1882
  • 1000:$1.2343
  • 500:$1.4793
  • 250:$1.5332
  • 100:$1.6977
  • 50:$1.7309
  • 25:$1.9232
  • 10:$2.0816
  • 6:$2.4048
IPL60R285P7AUMA1
DISTI # IPL60R285P7AUMA1		Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPL60R285P7AUMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.2079
  • 6000:$1.1649
  • 12000:$1.1229
  • 18000:$1.0849
  • 30000:$1.0649
IPL60R285P7AUMA1
DISTI # SP001657424		Infineon Technologies AGHIGH POWER_NEW (Alt: SP001657424)
RoHS: Compliant
Min Qty: 3000		Europe - 0
  • 3000:€1.8379
  • 6000:€1.4309
  • 12000:€1.1889
  • 18000:€1.1099
  • 30000:€1.0549
IPL60R285P7AUMA1
DISTI # 49AC8004		Infineon Technologies AGMOSFET, N-CH, 600V, 13A, VSON,Transistor Polarity:N Channel,Continuous Drain Current Id:13A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.218ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes101
  • 1000:$1.2100
  • 500:$1.4600
  • 250:$1.5700
  • 100:$1.6700
  • 50:$1.8100
  • 25:$1.9500
  • 10:$2.0900
  • 1:$2.4600
IPL60R285P7AUMA1
DISTI # 726-IPL60R285P7AUMA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		16
  • 1:$2.4600
  • 10:$2.0900
  • 100:$1.6700
  • 500:$1.4600
  • 1000:$1.2100
  • 3000:$1.1300
  • 6000:$1.0900
IPL60R285P7AUMA1
DISTI # 2841640		Infineon Technologies AGMOSFET, N-CH, 600V, 13A, VSON
RoHS: Compliant		111
  • 500:£1.1500
  • 250:£1.2300
  • 100:£1.3200
  • 10:£1.6500
  • 1:£2.1900
IPL60R285P7AUMA1
DISTI # 2841640		Infineon Technologies AGMOSFET, N-CH, 600V, 13A, VSON
RoHS: Compliant		101
  • 1000:$1.7900
  • 500:$1.8800
  • 250:$1.9800
  • 100:$2.1000
  • 10:$2.3700
  • 1:$2.5400
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Қол жетімділік
Қор:
11
Тапсырыс бойынша:
1994
Саны енгізіңіз:
IPL60R285P7AUMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
2,46 $
2,46 $
10
2,09 $
20,90 $
100
1,67 $
167,00 $
500
1,46 $
730,00 $
1000
1,21 $
1 210,00 $
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