BSC070N10NS3GATMA1

BSC070N10NS3GATMA1
Mfr. #:
BSC070N10NS3GATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSC070N10NS3GATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PG-TDSON-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
100 V
Идентификатор - үздіксіз төгу тогы:
90 A
Rds On - ағызу көзіне қарсылық:
7 mOhms
Vgs th - Gate-Source шекті кернеуі:
2 V
Vgs - Шлюз көзі кернеуі:
10 V
Qg - қақпа заряды:
42 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
114 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
1.27 mm
Ұзындығы:
5.9 mm
Серия:
OptiMOS 3
Транзистор түрі:
1 N-Channel
Ені:
5.15 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
36 S
Күз уақыты:
8 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
10 ns
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
29 ns
Қосудың әдеттегі кешігу уақыты:
15 ns
Бөлім # Бүркеншік аттар:
BSC070N10NS3 BSC7N1NS3GXT G SP000778082
Бірлік салмағы:
0.010582 oz
Tags
BSC070N10NS3, BSC070N10N, BSC070N, BSC070, BSC07, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 7 mOhm OptiMOS™3 Power-Transistor - PG-TDSON-8
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; On Resistance Rds(On):0.0063Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
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Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 100V, 63A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0103ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 114W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12.4 / Gate-Source Voltage V = 20 / Fall Time ns = 6.4 / Rise Time ns = 9.6 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 7.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 114
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MOSFET, 100V, 100A, 9.0 mOhm, 65 nC Qg,PQFN 5x6
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Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***nell
MOSFET, N-CH, 100V, 13A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 3.6W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
Бөлім № Mfg. Сипаттама Қор Бағасы
BSC070N10NS3GATMA1
DISTI # V72:2272_06383503
Infineon Technologies AGTrans MOSFET N-CH 100V 90A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
4188
  • 3000:$0.6068
  • 1000:$0.6130
  • 500:$0.7507
  • 250:$0.8361
  • 100:$0.8454
  • 25:$1.0488
  • 10:$1.0616
  • 1:$1.2038
BSC070N10NS3GATMA1
DISTI # BSC070N10NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.7037
BSC070N10NS3GATMA1
DISTI # BSC070N10NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.8175
  • 500:$1.0354
  • 100:$1.3352
  • 10:$1.6890
  • 1:$1.9100
BSC070N10NS3GATMA1
DISTI # BSC070N10NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.8175
  • 500:$1.0354
  • 100:$1.3352
  • 10:$1.6890
  • 1:$1.9100
BSC070N10NS3GATMA1
DISTI # 31308611
Infineon Technologies AGTrans MOSFET N-CH 100V 90A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
4188
  • 12:$1.2038
BSC070N10NS3GATMA1
DISTI # BSC070N10NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 90A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC070N10NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.5539
  • 10000:$0.5339
  • 20000:$0.5149
  • 30000:$0.4969
  • 50000:$0.4879
BSC070N10NS3GATMA1
DISTI # 47Y7995
Infineon Technologies AGMOSFET Transistor, N Channel, 90 A, 100 V, 0.0063 ohm, 10 V, 2.7 V RoHS Compliant: Yes0
  • 1:$1.5800
  • 10:$1.3500
  • 25:$1.2500
  • 50:$1.1400
  • 100:$1.0400
  • 250:$0.9770
  • 500:$0.9140
  • 1000:$0.7220
BSC070N10NS3GATMA1.
DISTI # 27AC1074
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0063ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:114W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.5540
  • 10000:$0.5340
  • 20000:$0.5150
  • 30000:$0.4970
  • 50000:$0.4880
BSC070N10NS3 G
DISTI # 726-BSC070N10NS3G
Infineon Technologies AGMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
RoHS: Compliant
208
  • 1:$1.5800
  • 10:$1.3500
  • 100:$1.0400
  • 500:$0.9140
  • 1000:$0.7220
BSC070N10NS3GATMA1
DISTI # 726-BSC070N10NS3GATM
Infineon Technologies AGMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
RoHS: Compliant
197
  • 1:$1.5800
  • 10:$1.3500
  • 100:$1.0400
  • 500:$0.9140
  • 1000:$0.7220
BSC070N10NS3GATMA1
DISTI # 9064359P
Infineon Technologies AGMOSFET N-CHANNEL 100V 90A OPTIMOS TDSON, RL4750
  • 50:£0.8650
  • 250:£0.7530
  • 500:£0.6610
  • 1250:£0.5220
BSC070N10NS3GATMA1
DISTI # 2443421
Infineon Technologies AGMOSFET, N CH, 100V, 90A, TDSON-8
RoHS: Compliant
7454
  • 5:£0.9400
  • 25:£0.8490
  • 100:£0.6620
  • 250:£0.6050
  • 500:£0.5470
BSC070N10NS3GATMA1
DISTI # C1S322000595923
Infineon Technologies AGTrans MOSFET N-CH 100V 90A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
4688
  • 10:$1.0693
BSC070N10NS3GATMA1
DISTI # 2443421
Infineon Technologies AGMOSFET, N CH, 100V, 90A, TDSON-8
RoHS: Compliant
7172
  • 1:$2.5000
  • 10:$2.1400
  • 100:$1.6500
  • 500:$1.4500
  • 1000:$1.1500
  • 5000:$1.1400
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NCP301LSN27T1G

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MOSFET FET 150V 175.0 MOHM MLP22
BSC160N10NS3GATMA1

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MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3
BSC037N08NS5ATMA1

Mfr.#: BSC037N08NS5ATMA1

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OMO.#: OMO-RC0603FR-071KL

Thick Film Resistors - SMD 1K OHM 1%
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Mfr.#: BLM18PG121SN1D

OMO.#: OMO-BLM18PG121SN1D

Ferrite Beads 0603 120 OHM
LL4148

Mfr.#: LL4148

OMO.#: OMO-LL4148-ON-SEMICONDUCTOR

DIODE GEN PURP 100V 200MA SOD80
BLM18PG121SN1D

Mfr.#: BLM18PG121SN1D

OMO.#: OMO-BLM18PG121SN1D-MURATA-ELECTRONICS

EMI Filter Beads, Chips & Arrays 0603 120 OHM
Қол жетімділік
Қор:
17
Тапсырыс бойынша:
2000
Саны енгізіңіз:
BSC070N10NS3GATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,57 $
1,57 $
10
1,34 $
13,40 $
100
1,03 $
103,00 $
500
0,91 $
457,00 $
1000
0,72 $
722,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
-ден бастаңыз
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