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BSB165N15NZ3GXUMA1

BSB165N15NZ3GXUMA1
Mfr. #:
BSB165N15NZ3GXUMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSB165N15NZ3GXUMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
WDSON-2-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
150 V
Идентификатор - үздіксіз төгу тогы:
45 A
Rds On - ағызу көзіне қарсылық:
13.1 mOhms
Vgs th - Gate-Source шекті кернеуі:
2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
35 nC
Ең төменгі жұмыс температурасы:
- 40 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
78 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
0.7 mm
Ұзындығы:
6.35 mm
Серия:
OptiMOS 3
Транзистор түрі:
1 N-Channel
Ені:
5.05 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
24 S
Күз уақыты:
7 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
10 ns
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
17 ns
Қосудың әдеттегі кешігу уақыты:
10 ns
Бөлім # Бүркеншік аттар:
BSB165N15NZ3 BSB165N15NZ3GXT G SP000617000
Tags
BSB165, BSB16, BSB1, BSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 150 V 16.5 mOhm 26 nC OptiMOS™ Power Mosfet - MG-WDSON-2
***ment14 APAC
MOSFET, N-CH, 150V, 45A, WDSON-2; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Source Voltage Vds:150V; On Resistance
***ineon SCT
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, MG-WDSON-2, RoHS
***nell
MOSFET, N-CH, 150V, 45A, WDSON-2; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0131ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 78W; Transistor Case Style: WDSON; No. of Pins: 2Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***emi
N-Channel Power Trench® MOSFET 150V, 9.4a, 134mΩ
***ure Electronics
FDMC86244 Series 150 V 9.4 A 134 mOhm N.Ch. PowerTrench Mosfet - MLP-8
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N CH, 150V, 9.4A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.6V; Power Dissipation Pd:26W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ure Electronics
N-Channel 150 V 177 mOhm 19 W ThunderFET Mosfet PowerPAK-SC-70-6L
***ical
Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R
***ark
MOSFET, N CH, 150V, 7.7A, POWERPAK SC70
***roFlash
Power Field-Effect Transistor, 7.7A I(D), 150V, 0.177ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Stop Electro
Power Field-Effect Transistors
***enic
PowerPAK SC-70-6L MOSFETs ROHS
***emi
N-Channel PowerTrench® MOSFET 150V, 7.5A, 19.8mΩ
***ure Electronics
FDS86240 Series 150 V 7.5 A 19.8 mOhm N-Ch PowerTrench® MOSFET - SO-8
***Yang
Trans MOSFET N-CH 150V 7.5A 8-Pin SOIC N T/R - Tape and Reel
***ment14 APAC
MOSFET, N CH, 150V, 7.5A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0173ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.7V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:30A
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***et
Trans MOSFET N-CH 150V 7.2A 8-Pin PowerPAK SO T/R
***enic
150V 26A 5.2W 45m´Î@10V5A 4.5V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
*** Source Electronics
MOSFET N-CH 150V 26A PPAK SO-8
***roFlash
Power Field-Effect Transistor, 7.2A I(D), 150V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ronik
N-CH 150V 26A 80mOhm PPSO-8 RoHSconf
***ure Electronics
N-CH POWERPAK SO-8 WFET 150V 45MOHM @ 10V
***ment14 APAC
N-CHANNEL 150-V (D-S) WFET; N-CHANNEL 150-V (D-S) WFET
***nell
N CHANNEL MOSFET, 150V, 26A, SOIC-8; Tra; N CHANNEL MOSFET, 150V, 26A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V
***ure Electronics
Single N-Channel 150 V 0.045 Ohm Surface Mount Power Mosfet - PowerPAK SO-8
*** Source Electronics
MOSFET N-CH 150V 26A PPAK SO-8 / Trans MOSFET N-CH 150V 7.2A 8-Pin PowerPAK SO T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:26A; On Resistance Rds(On):0.036Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V Rohs Compliant: No
***ment14 APAC
MOSFET,N CH,DIODE,150V,26A,SO-8 PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.2A; Power Dissipation Pd:5.2W; Voltage Vgs Max:20V
***ark
PT5 150V/20V Nch Power Trench MOSFET - 8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM
***emi
N-Channel PowerTrench® MOSFET 150V, 30A, 25mΩ
***ment14 APAC
MOSFET, N-CH, 150V, 30A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Source Voltage Vds:150V; On Resistance
*** Stop Electro
Power Field-Effect Transistor, 6.7A I(D), 150V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N-CH, 150V, 30A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.9V; Power Dissipation Pd: 96W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Бөлім № Mfg. Сипаттама Қор Бағасы
BSB165N15NZ3GXUMA1
DISTI # V72:2272_06377741		Infineon Technologies AGTrans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R
RoHS: Compliant		3781
  • 3000:$1.6680
  • 1000:$1.6880
  • 500:$2.0050
  • 250:$2.2330
  • 100:$2.3510
  • 25:$2.4129
  • 10:$2.6810
  • 1:$3.4969
BSB165N15NZ3GXUMA1
DISTI # V36:1790_06377741		Infineon Technologies AGTrans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R
RoHS: Compliant		0
  • 5000000:$1.4100
  • 2500000:$1.4120
  • 500000:$1.4910
  • 50000:$1.6090
  • 5000:$1.6270
BSB165N15NZ3GXUMA1
DISTI # BSB165N15NZ3GXUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 150V 9A WDSON-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5202In Stock
  • 1000:$1.8331
  • 500:$2.1736
  • 100:$2.5533
  • 10:$3.1160
  • 1:$3.4700
BSB165N15NZ3GXUMA1
DISTI # BSB165N15NZ3GXUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 150V 9A WDSON-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5202In Stock
  • 1000:$1.8331
  • 500:$2.1736
  • 100:$2.5533
  • 10:$3.1160
  • 1:$3.4700
BSB165N15NZ3GXUMA1
DISTI # BSB165N15NZ3GXUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 150V 9A WDSON-2
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$1.6272
BSB165N15NZ3GXUMA1
DISTI # 26194896		Infineon Technologies AGTrans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R
RoHS: Compliant		3781
  • 4:$3.4969
BSB165N15NZ3GXUMA1
DISTI # BSB165N15NZ3GXUMA1		Infineon Technologies AGTrans MOSFET N-CH 150V 9A CanPAK T/R - Bulk (Alt: BSB165N15NZ3GXUMA1)
Min Qty: 232
Container: Bulk		Americas - 0
  • 1160:$1.2900
  • 2320:$1.2900
  • 696:$1.3900
  • 232:$1.4900
  • 464:$1.4900
BSB165N15NZ3GXUMA1
DISTI # SP000617000		Infineon Technologies AGTrans MOSFET N-CH 150V 9A CanPAK T/R (Alt: SP000617000)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€1.3900
  • 20000:€1.4900
  • 30000:€1.4900
  • 10000:€1.6900
  • 5000:€2.0900
BSB165N15NZ3GXT
DISTI # BSB165N15NZ3GXUMA1		Infineon Technologies AGTrans MOSFET N-CH 150V 9A 7-Pin WDSON - Tape and Reel (Alt: BSB165N15NZ3GXUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 30000:$1.4900
  • 50000:$1.4900
  • 10000:$1.5900
  • 20000:$1.5900
  • 5000:$1.6900
BSB165N15NZ3 G
DISTI # 726-BSB165N15NZ3G		Infineon Technologies AGMOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3
RoHS: Compliant		4500
  • 1:$3.2000
  • 10:$2.7200
  • 100:$2.3600
  • 250:$2.2400
  • 500:$2.0100
  • 1000:$1.6900
  • 2500:$1.6100
  • 5000:$1.5500
BSB165N15NZ3GXUMA1
DISTI # 726-BSB165N15NZ3GXUM		Infineon Technologies AGMOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3
RoHS: Compliant		4806
  • 1:$3.2000
  • 10:$2.7200
  • 100:$2.3600
  • 250:$2.2400
  • 500:$2.0100
  • 1000:$1.6900
  • 2500:$1.6100
  • 5000:$1.5500
BSB165N15NZ3GXUMA1Infineon Technologies AGPower Field-Effect Transistor, 9A I(D), 150V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		25830
  • 1000:$1.4200
  • 500:$1.5000
  • 100:$1.5600
  • 25:$1.6200
  • 1:$1.7500
BSB165N15NZ3GXUMA1
DISTI # 2480771RL		Infineon Technologies AGMOSFET, N-CH, 150V, 45A, WDSON-2
RoHS: Compliant		0
  • 2500:$2.4800
  • 1000:$2.6100
  • 500:$3.1000
  • 250:$3.4500
  • 100:$3.6400
  • 10:$4.1900
  • 1:$4.9200
BSB165N15NZ3GXUMA1
DISTI # 2480771		Infineon Technologies AGMOSFET, N-CH, 150V, 45A, WDSON-2
RoHS: Compliant		0
  • 2500:$2.4800
  • 1000:$2.6100
  • 500:$3.1000
  • 250:$3.4500
  • 100:$3.6400
  • 10:$4.1900
  • 1:$4.9200
BSB165N15NZ3GXUMA1
DISTI # 2480771		Infineon Technologies AGMOSFET, N-CH, 150V, 45A, WDSON-20
  • 500:£1.5400
  • 250:£1.7100
  • 100:£1.8000
  • 10:£2.0800
  • 1:£2.7500
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Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1987
Саны енгізіңіз:
BSB165N15NZ3GXUMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
3,20 $
3,20 $
10
2,72 $
27,20 $
100
2,36 $
236,00 $
250
2,24 $
560,00 $
500
2,01 $
1 005,00 $
1000
1,69 $
1 690,00 $
2500
1,61 $
4 025,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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