NGTB75N65FL2WG

NGTB75N65FL2WG
Mfr. #:
NGTB75N65FL2WG
Өндіруші:
ON Semiconductor
Сипаттама:
IGBT Transistors 650V/75A FAST FSII TO-247
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
NGTB75N65FL2WG Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB75N65FL2WG DatasheetNGTB75N65FL2WG Datasheet (P4-P6)NGTB75N65FL2WG Datasheet (P7-P9)NGTB75N65FL2WG Datasheet (P10-P11)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ON Жартылай өткізгіш
Өнім санаты:
IGBT транзисторлары
RoHS:
Y
Технология:
Си
Серия:
NGTB75N65FL2
Қаптама:
Түтік
Бренд:
ON Жартылай өткізгіш
Өнім түрі:
IGBT транзисторлары
Зауыттық буманың саны:
30
Ішкі санат:
IGBT
Бірлік салмағы:
0.000071 oz
Tags
NGTB75N65FL2W, NGTB75N65, NGTB7, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
TRANSISTOR, IGBT, 1.75KV, 100A, TO-247
***i-Key
IGBT TRENCH/FS 650V 100A TO247
***r Electronics
Insulated Gate Bipolar Transistor
***nell
TRANSISTOR, IGBT, 1.75KV, 100A, TO-247; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 595W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No.
***ical
Trans IGBT Chip N-CH 650V 100A 417000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
650 V 100 A Through Hole Insulated Gate Bipolar Transistor (IGBT) - TO-247-3
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 100A TO247-3
***DA Technology Co., Ltd.
Product Description Demo for Development.
***et
Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247AC Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors IR IGBT 600V 600V 48A COPAK-247AC
***(Formerly Allied Electronics)
Transistor IGBT N-ch 600V 60A TO-247AC
***ineon
Target Applications: Pump; Solar; UPS; Welding
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***ical
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
***nell
IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 283W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins:
***ical
Trans IGBT Chip N-CH 650V 80A 290000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247AB
*** Electronic Components
IGBT Transistors N-ch / 40A 650V IGBT
***nell
IGBT, 650V, 40A, 1.8V, TO-247 FIELD STOP;
***i-Key
IGBT FIELD STOP 650V 80A TO247-3
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential
***ical
Trans IGBT Chip N=-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
*** Source Electronics
650V DuoPack IGBT and Diode High speed switching series fifth generation
***ineon SCT
650 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***nell
IGBT, 650V, 50A, TO247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 305W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
*** Source Electronics
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube / IGBT BIPO 650V 60A TO247-3
***ark
Transistor, Igbt, 650V, 80A, To-247Ll Rohs Compliant: Yes
***icroelectronics SCT
Short-circuit rugged IGBT, TO-247 long leads, Tube
***el Electronic
DAC 4-CH R-2R 8-bit 20-Pin PDIP Tube
***r Electronics
Insulated Gate Bipolar Transistor
Бөлім № Mfg. Сипаттама Қор Бағасы
NGTB75N65FL2WG
DISTI # V99:2348_07283923
ON SemiconductorTrans IGBT Chip N-CH 650V 100A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
90
  • 2500:$4.3960
  • 1000:$4.4589
  • 500:$4.9260
  • 250:$5.3280
  • 100:$5.7140
  • 25:$6.6130
  • 10:$6.8780
  • 1:$7.5470
NGTB75N65FL2WG
DISTI # NGTB75N65FL2WGOS-ND
ON SemiconductorIGBT 600V 75A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
210In Stock
  • 510:$5.8590
  • 120:$6.7284
  • 30:$7.7490
  • 1:$9.0000
NGTB75N65FL2WG
DISTI # 30652377
ON SemiconductorTrans IGBT Chip N-CH 650V 100A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
90
  • 25:$6.6130
  • 10:$6.8780
  • 2:$7.5470
NGTB75N65FL2WG
DISTI # NGTB75N65FL2WG
ON SemiconductorTrans IGBT Chip N-CH 650V 100A 3-Pin TO-247 Tube (Alt: NGTB75N65FL2WG)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 90
  • 1:€5.7900
  • 10:€5.2900
  • 25:€5.0900
  • 50:€4.8900
  • 100:€4.6900
  • 500:€4.4900
  • 1000:€4.1900
NGTB75N65FL2WG
DISTI # NGTB75N65FL2WG
ON SemiconductorTrans IGBT Chip N-CH 650V 100A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB75N65FL2WG)
RoHS: Compliant
Min Qty: 90
Container: Tube
Americas - 0
  • 90:$4.6900
  • 150:$4.5900
  • 240:$4.5900
  • 450:$4.4900
  • 900:$4.3900
NGTB75N65FL2WG
DISTI # 13AC3828
ON SemiconductorTRANSISTOR, IGBT, 1.75KV, 100A, TO-247,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.75V,Power Dissipation Pd:595W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of , RoHS Compliant: Yes56
  • 1:$8.1000
  • 10:$7.2800
  • 25:$6.6300
  • 50:$6.2000
  • 100:$5.7600
  • 250:$4.8300
  • 500:$4.6800
NGTB75N65FL2WG.
DISTI # 15AC3816
ON SemiconductorDC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:595W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- , RoHS Compliant: Yes0
  • 1:$4.6900
  • 150:$4.5900
  • 450:$4.4900
  • 900:$4.3900
NGTB75N65FL2WG
DISTI # 863-NGTB75N65FL2WG
ON SemiconductorIGBT Transistors 650V/75A FAST FSII TO-247
RoHS: Compliant
60
  • 1:$8.5700
  • 10:$7.7500
  • 25:$7.3900
  • 100:$6.4100
  • 250:$6.1300
  • 500:$5.5800
  • 1000:$4.8700
NGTB75N65FL2WGON Semiconductor 
RoHS: Not Compliant
30
  • 1000:$5.8800
  • 500:$6.1900
  • 100:$6.4500
  • 25:$6.7200
  • 1:$7.2400
NGTB75N65FL2WGON SemiconductorINSTOCK5274
    NGTB75N65FL2WG
    DISTI # 2724386
    ON SemiconductorTRANSISTOR, IGBT, 1.75KV, 100A, TO-247
    RoHS: Compliant
    56
    • 1:£7.0300
    • 5:£6.4800
    • 10:£5.5900
    • 50:£5.4500
    • 100:£4.8500
    NGTB75N65FL2WGON Semiconductor 4850
    • 1:$8.6000
    • 100:$6.4500
    • 500:$5.5300
    • 1000:$5.1600
    NGTB75N65FL2WG
    DISTI # 2724386
    ON SemiconductorTRANSISTOR, IGBT, 1.75KV, 100A, TO-247
    RoHS: Compliant
    56
    • 1:$14.8900
    • 30:$12.9800
    • 120:$11.2500
    • 510:$10.1200
    NGTB75N65FL2WG
    DISTI # C1S541901267591
    ON SemiconductorTrans IGBT Chip N-CH 650V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube90
    • 25:$6.6130
    • 10:$6.8780
    • 1:$7.5470
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    Switching Power Supplies 12V 1.8A 21.6W 85-264Vin Encap PS
    IRM-10-5

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    Қол жетімділік
    Қор:
    132
    Тапсырыс бойынша:
    2115
    Саны енгізіңіз:
    NGTB75N65FL2WG ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    7,37 $
    7,37 $
    10
    6,66 $
    66,60 $
    25
    6,35 $
    158,75 $
    100
    5,51 $
    551,00 $
    250
    5,27 $
    1 317,50 $
    500
    4,80 $
    2 400,00 $
    2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
    -ден бастаңыз
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