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IPB081N06L3GATMA1

IPB081N06L3GATMA1
Mfr. #:
IPB081N06L3GATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPB081N06L3GATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TO-263-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
60 V
Идентификатор - үздіксіз төгу тогы:
50 A
Rds On - ағызу көзіне қарсылық:
6.7 mOhms
Vgs th - Gate-Source шекті кернеуі:
1.2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
29 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
79 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
4.4 mm
Ұзындығы:
10 mm
Серия:
OptiMOS 3
Транзистор түрі:
1 N-Channel
Ені:
9.25 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
35 S
Күз уақыты:
7 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
26 ns
Зауыттық буманың саны:
1000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
37 ns
Қосудың әдеттегі кешігу уақыты:
15 ns
Бөлім # Бүркеншік аттар:
G IPB081N06L3 IPB81N6L3GXT SP000398076
Бірлік салмағы:
0.139332 oz
Tags
IPB081N06L3G, IPB081, IPB08, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO263-3, RoHS
***ment14 APAC
MOSFET, N CH, 50A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
Бөлім № Mfg. Сипаттама Қор Бағасы
IPB081N06L3GATMA1
DISTI # V72:2272_06384674		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		990
  • 500:$0.8331
  • 250:$0.8476
  • 100:$0.9417
  • 25:$1.1252
  • 10:$1.2502
  • 1:$1.6010
IPB081N06L3GATMA1
DISTI # V36:1790_06384674		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$0.5248
  • 500000:$0.5252
  • 100000:$0.5803
  • 10000:$0.6904
  • 1000:$0.7095
IPB081N06L3GATMA1
DISTI # IPB081N06L3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1408In Stock
  • 500:$0.9257
  • 100:$1.1206
  • 10:$1.4370
  • 1:$1.6100
IPB081N06L3GATMA1
DISTI # IPB081N06L3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1408In Stock
  • 500:$0.9257
  • 100:$1.1206
  • 10:$1.4370
  • 1:$1.6100
IPB081N06L3GATMA1
DISTI # IPB081N06L3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 10000:$0.6055
  • 5000:$0.6291
  • 2000:$0.6622
  • 1000:$0.7095
IPB081N06L3GATMA1
DISTI # 31919767		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		990
  • 12:$1.6010
IPB081N06L3GXT
DISTI # IPB081N06L3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB081N06L3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.5719
  • 6000:$0.5819
  • 4000:$0.6029
  • 2000:$0.6249
  • 1000:$0.6489
IPB081N06L3GATMA1
DISTI # 60R2670		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 50A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0067ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes681
  • 500:$0.8650
  • 100:$0.9790
  • 10:$1.2700
  • 1:$1.4800
IPB081N06L3 G
DISTI # 726-IPB081N06L3G		Infineon Technologies AGMOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant		3004
  • 1:$1.4700
  • 10:$1.2600
  • 100:$0.9690
  • 500:$0.8560
  • 1000:$0.6760
  • 2000:$0.6000
  • 10000:$0.5770
IPB081N06L3GATMA1
DISTI # 726-IPB081N06L3GATMA		Infineon Technologies AGMOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant		2030
  • 1:$1.4700
  • 10:$1.2600
  • 100:$0.9690
  • 500:$0.8560
  • 1000:$0.6760
  • 2000:$0.6000
  • 10000:$0.5770
IPB081N06L3GATMA1
DISTI # 8269525P		Infineon Technologies AGMOSFET N-CH 50A 60V OPTIMOS3 TO263, RL975
  • 1000:£0.4720
  • 500:£0.5830
  • 250:£0.6220
  • 100:£0.6600
IPB081N06L3GATMA1
DISTI # 1775548		Infineon Technologies AGMOSFET, N CH, 50A, 60V, PG-TO263-3
RoHS: Compliant		681
  • 2000:$0.9040
  • 1000:$1.0200
  • 500:$1.2900
  • 100:$1.4600
  • 10:$1.9000
  • 1:$2.2200
IPB081N06L3GATMA1
DISTI # XSKDRABV0051843		Infineon Technologies AG 
RoHS: Compliant		2200 in Stock0 on Order
  • 2200:$0.7747
  • 1000:$0.8300
IPB081N06L3GATMA1
DISTI # 1775548		Infineon Technologies AGMOSFET, N CH, 50A, 60V, PG-TO263-31791
  • 500:£0.6670
  • 250:£0.7110
  • 100:£0.7540
  • 10:£1.0300
  • 1:£1.3100
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Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1984
Саны енгізіңіз:
IPB081N06L3GATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,47 $
1,47 $
10
1,26 $
12,60 $
100
0,97 $
96,90 $
500
0,86 $
428,00 $
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