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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| IPB200N25N3GATMA1 DISTI # V72:2272_06377749 | Infineon Technologies AG | Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 0 | |
| IPB200N25N3GATMA1 DISTI # V36:1790_06377749 | Infineon Technologies AG | Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 0 |
|
| IPB200N25N3GATMA1 DISTI # IPB200N25N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 250V 64A TO263-3 Min Qty: 1000 Container: Tape & Reel (TR) | On Order |
|
| IPB200N25N3GATMA1 DISTI # IPB200N25N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 250V 64A TO263-3 Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| IPB200N25N3GATMA1 DISTI # IPB200N25N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 250V 64A TO263-3 Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| IPB200N25N3GATMA1 DISTI # IPB200N25N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N25N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB200N25N3GATMA1 DISTI # SP000677896 | Infineon Technologies AG | Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: SP000677896) Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| IPB200N25N3GATMA1 DISTI # 79X1433 | Infineon Technologies AG | MOSFET, N-CH, 250V, 64A, TO-263- 3,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.0175ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| IPB200N25N3 G DISTI # 726-IPB200N25N3GXT | Infineon Technologies AG | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 RoHS: Compliant | 0 |
|
| IPB200N25N3GATMA1 DISTI # 726-IPB200N25N3GATMA | Infineon Technologies AG | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 RoHS: Compliant | 0 |
|
| IPB200N25N3GATMA1 DISTI # 1658068 | Infineon Technologies AG | IPB200N25N3GATMA1 N-Channel MOSFET, 64 A, 250 V OptiMOS 3, 3-Pin D2PAK Infineon, RL | 0 |
|
| IPB200N25N3GATMA1 DISTI # 8986870 | Infineon Technologies AG | IPB200N25N3GATMA1 N-Channel MOSFET, 64 A, 250 V OptiMOS 3, 3-Pin D2PAK Infineon, PK | 0 |
|
| IPB200N25N3GATMA1 DISTI # 2432726 | Infineon Technologies AG | MOSFET, N CH, 250V, 64A, TO-263-3 | 0 |
|
| IPB200N25N3GATMA1 DISTI # 2432726RL | Infineon Technologies AG | MOSFET, N CH, 250V, 64A, TO-263-3 RoHS: Compliant | 0 |
|
| IPB200N25N3GATMA1 DISTI # 2432726 | Infineon Technologies AG | MOSFET, N CH, 250V, 64A, TO-263-3 RoHS: Compliant | 18 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: IPB200N25N3 G OMO.#: OMO-IPB200N25N3-G |
MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 |
|
|
Mfr.#: IPB200N25N3GATMA1 OMO.#: OMO-IPB200N25N3GATMA1 |
MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 |
|
Mfr.#: IPB200N25N3G OMO.#: OMO-IPB200N25N3G-1190 |
POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB |
|
|
Mfr.#: IPB200N25N3 OMO.#: OMO-IPB200N25N3-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPB200N25N3 G OMO.#: OMO-IPB200N25N3-G-1190 |
Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: IPB200N25N3 G) |
|
|
Mfr.#: IPB200N25N3 G(SP0006778 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPB200N25N3G(SP00067789 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPB200N25N3G(SP000677896 |
Жаңа және түпнұсқа |
|
Mfr.#: IPB200N25N3GATMA1 |
MOSFET N-CH 250V 64A TO263-3 |
|
|
Mfr.#: IPB200N25N3GXT OMO.#: OMO-IPB200N25N3GXT-1190 |
Жаңа және түпнұсқа |