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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| SI7172DP-T1-GE3 DISTI # V72:2272_09216290 | Vishay Intertechnologies | Trans MOSFET N-CH 200V 5.9A 8-Pin PowerPAK SO T/R RoHS: Compliant | 724 |
|
| SI7172DP-T1-GE3 DISTI # V36:1790_09216290 | Vishay Intertechnologies | Trans MOSFET N-CH 200V 5.9A 8-Pin PowerPAK SO T/R RoHS: Compliant | 0 |
|
| SI7172DP-T1-GE3 DISTI # SI7172DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 200V 25A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4961In Stock |
|
| SI7172DP-T1-GE3 DISTI # SI7172DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 200V 25A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 4961In Stock |
|
| SI7172DP-T1-GE3 DISTI # SI7172DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 200V 25A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 3000In Stock |
|
| SI7172DP-T1-GE3 DISTI # 33370579 | Vishay Intertechnologies | Trans MOSFET N-CH 200V 5.9A 8-Pin PowerPAK SO T/R RoHS: Compliant | 724 |
|
| SI7172DP-T1-GE3 DISTI # SI7172DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 200V 5.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7172DP-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 15000 |
|
| SI7172DP-T1-GE3 DISTI # SI7172DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 200V 5.9A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SI7172DP-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Cut Tape | Americas - 0 |
|
| SI7172DP-T1-GE3 DISTI # SI7172DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 200V 5.9A 8-Pin PowerPAK SO T/R (Alt: SI7172DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 0 | |
| SI7172DP-T1-GE3. DISTI # 16AC0264 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.076ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:4V,Power Dissipation Pd:5.4W,No. of Pins:8Pins RoHS Compliant: No | 45000 |
|
| SI7172DP-T1-GE3 DISTI # 781-SI7172DP-T1-GE3 | Vishay Intertechnologies | MOSFET 200V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 11452 |
|
| SI7172DP-T1-GE3 | Vishay Intertechnologies | MOSFET 200V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | Americas - 15000 |
|
| SI7172DP-T1-GE3 DISTI # 2478966 | Vishay Intertechnologies | N CHANNEL MOSFET, 200V, 25A, SOIC, FULL RoHS: Compliant | 0 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: SI7112DN-T1-GE3 OMO.#: OMO-SI7112DN-T1-GE3 |
MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V |
|
Mfr.#: SI7111EDN-T1-GE3 OMO.#: OMO-SI7111EDN-T1-GE3-VISHAY |
MOSFET P-CH 30V 60A POWERPAK1212 |
|
Mfr.#: SI7115DN-T1-E3 OMO.#: OMO-SI7115DN-T1-E3-VISHAY |
MOSFET P-CH 150V 8.9A 1212-8 |
|
Mfr.#: SI7121DN-T1-G3 OMO.#: OMO-SI7121DN-T1-G3-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SI7137 OMO.#: OMO-SI7137-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SI7137DN-T3-GE3 OMO.#: OMO-SI7137DN-T3-GE3-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SI7137DP-T1 OMO.#: OMO-SI7137DP-T1-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SI7148DP OMO.#: OMO-SI7148DP-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SI7190DP-T1 OMO.#: OMO-SI7190DP-T1-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SI7192DPT1GE3 OMO.#: OMO-SI7192DPT1GE3-1190 |
Жаңа және түпнұсқа |