MRF6V12500HR5

Mfr. #:: MRF6V12500HR5
Өндіруші:: NXP / Freescale
Сипаттама:: RF MOSFET Transistors VHV6 500W 50V NI780H
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: MRF6V12500HR5 Деректер тізімі
Жеткізу:: DHL FedEx Ups TNT EMS
Төлем:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:: MRF6V12500HR5 Көбірек ақпарат

Өнім атрибуты
Төлсипат мәні

Өндіруші:: NXP

Өнім санаты:: RF MOSFET транзисторлары

RoHS:: Y

Транзистордың полярлығы:: N-арна

Технология:: Си

Vds - ағызу көзінің бұзылу кернеуі:: 110 V

Табыс:: 18.5 dB

Шығу қуаты:: 50 W

Максималды жұмыс температурасы:: + 150 C

Орнату стилі:: SMD/SMT

Пакет/қорап:: NI-780

Қаптама:: Ролик

Конфигурация:: Бойдақ

Жұмыс жиілігі:: 0.96 GHz to 1.215 GHz

Серия:: MRF6V12500H

Бренд:: NXP / Freescale

Өнім түрі:: RF MOSFET транзисторлары

Зауыттық буманың саны:: 50

Ішкі санат:: MOSFETs

Vgs - Шлюз көзі кернеуі:: 10 V

Vgs th - Gate-Source шекті кернеуі:: 2.4 V

Бөлім # Бүркеншік аттар:: 935310167178

Бірлік салмағы:: 0.226635 oz

Tags: MRF6V12500HR, MRF6V12500H, MRF6V125, MRF6V12, MRF6V1, MRF6V, MRF6, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF6V12500HR5 Рейтингтер мен шолулар

R***U

all is ok

2019-01-24

K***n

good

2019-04-28

A***V

Works

2019-04-19

G***s

Thank you.

2019-07-10

MRF6V12500HR5 Сипаттама

***W: RF Power Transistor,960 to 1215 MHz, 500 W, Typ Gain in dB is 19.7 @ 1030 MHz, 50 V, LDMOS, SOT1792

*** Semiconductors SCT: Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V, CFM2F, RoHS

***p One Stop Global: Trans RF MOSFET N-CH 110V 3-Pin NI-780 T/R

***el Electronic: RF MOSFET Transistors VHV6 500W 50V NI780H

***ponent Stockers USA: L BAND Si N-CHANNEL RF POWER MOSFET

***escale Semiconductor: Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V

***W: RF Power Transistor,470 to 860 MHz, 450 W, Typ Gain in dB is 22.5 @ 860 MHz, 50 V, LDMOS, SOT1787

***nsix Microsemi: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***ark: RF MOSFET, N CHANNEL, 110V, 375D-05; Transistor Type:RF FET; Drain Source Voltage, Vds:110V; RF Transistor Case:375D; Gain:20.5dB; Gate-Source Voltage:10V; Operating Frequency Max:860MHz; Output Power, Pout:90W

***nell: RF FET, 110V, 860MHZ-470MHZ, CASE 375D; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 860MHz; Operating Frequency Max: 470MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6VP3450H Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***ark: Lateral N-Channel Broadband Rf Power Mosfet, 1.8-150 Mhz, 1000 W, 50 V Rohs Compliant: Yes

***W: RF Power Transistor,1.8 to 150 MHz, 1000 W, Typ Gain in dB is 26 @ 130 MHz, 50 V, LDMOS, SOT1787

***nell: RF FET, N-CH, 110V, 1.8-150MHZ, NI-1230; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 150MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***W: RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***nell: TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***hard Electronics: Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***SIT Distribution GmbH: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***nsix Microsemi: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No

MRF6V12500HR5 Көбірек ақпарат

MRF6V12500 Pulse Lateral N-Ch RF Power MOSFET: NXP's MRF6V12500 Pulse Lateral N-Channel RF Power MOSFET is designed for applications operating at frequencies between 960 and 1215 MHz. Features include devices that are internally matched for ease of use, qualified up to a maximum of 50 VDD operation, integrated ESD protection, and they have greater negative gate-source voltage range for improved Class C operation. This device is suitable for use in pulse applications.Learn More

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
MRF6V12500HR5 DISTI # 26099271	NXP Semiconductors	Trans RF MOSFET N-CH 110V 3-Pin NI-780 T/R	919	1:$541.9000
MRF6V12500HR5 DISTI # 568-15012-2-ND	NXP Semiconductors	FET RF 110V 1.03GHZ NI-780H RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	50In Stock	50:$367.0056
MRF6V12500HR5 DISTI # 568-15012-1-ND	NXP Semiconductors	FET RF 110V 1.03GHZ NI-780H RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	50In Stock	1:$378.0200
MRF6V12500HR5 DISTI # 568-15012-6-ND	NXP Semiconductors	FET RF 110V 1.03GHZ NI-780H RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	50In Stock	1:$378.0200
MRF6V12500HR5 DISTI # MRF6V12500HR5	Avnet, Inc.	Trans MOSFET N-CH 110V 2-Pin NI-780H T/R - Tape and Reel (Alt: MRF6V12500HR5) RoHS: Compliant Min Qty: 50 Container: Reel	Americas - 0	50:$402.1900 100:$386.3900 200:$371.2900 300:$357.8900 500:$350.9900
MRF6V12500HR5 DISTI # 841-MRF6V12500HR5	NXP Semiconductors	RF MOSFET Transistors VHV6 500W 50V NI780H RoHS: Compliant	0	1:$378.0100 5:$372.2000 10:$366.6600 25:$358.7500 50:$353.2400
MRF6V12500HR5 DISTI # MRF6V12500HR5	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	922	1:$370.3400 10:$360.8500 25:$351.8300
MRF6V12500HR5 DISTI # C1S233100302211	NXP Semiconductors	Trans RF MOSFET N-CH 110V 3-Pin NI-780 T/R RoHS: Compliant	919	10:$518.0000 5:$530.0000 1:$615.0000

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: MRF6V14300HSR5 OMO.#: OMO-MRF6V14300HSR5	RF MOSFET Transistors VHV6 1400MHZ 50V
	Mfr.#: MRF6V13250HSR5 OMO.#: OMO-MRF6V13250HSR5	RF MOSFET Transistors VHV6 250W 50V NI780HS
	Mfr.#: MRF6V12250HSR5 OMO.#: OMO-MRF6V12250HSR5	RF MOSFET Transistors VHV6 250W 50V NI780HS
	Mfr.#: MRF6V12500GSR5 OMO.#: OMO-MRF6V12500GSR5	RF MOSFET Transistors Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
	Mfr.#: MRF6V14300HR3 OMO.#: OMO-MRF6V14300HR3	RF MOSFET Transistors VHV6 1400MHZ 50V
	Mfr.#: MRF6V12250HSR3 OMO.#: OMO-MRF6V12250HSR3-NXP-SEMICONDUCTORS	FET RF 100V 1.03GHZ NI-780S
	Mfr.#: MRF6V13250H OMO.#: OMO-MRF6V13250H-1190	Жаңа және түпнұсқа
	Mfr.#: MRF6V14300MSR5 OMO.#: OMO-MRF6V14300MSR5-1190	Жаңа және түпнұсқа
	Mfr.#: MRF6V12250HR5 OMO.#: OMO-MRF6V12250HR5-NXP-SEMICONDUCTORS	FET RF 100V 1.03GHZ NI-780
	Mfr.#: MRF6V13250HSR5 OMO.#: OMO-MRF6V13250HSR5-NXP-SEMICONDUCTORS	FET RF 120V 1.3GHZ NI780S

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 3500
Саны енгізіңіз:

MRF6V12500HR5 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

Анықтамалық баға (USD)

Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы

1: ~~378,01 $~~; ~~378,01 $~~

5: ~~372,20 $~~; ~~1 861,00 $~~

10: ~~366,66 $~~; ~~3 666,60 $~~

25: ~~358,75 $~~; ~~8 968,75 $~~

-ден бастаңыз

MRF6V12500HR 3
MRF6V12500H 5
MRF6V125 6
MRF6V12 12
MRF6V1 27
MRF6V 92
MRF6 332
MRF 2307

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