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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| SI4048DY-T1-GE3 DISTI # V72:2272_09216440 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12.7A 8-Pin SOIC N T/R RoHS: Compliant | 2475 |
|
| SI4048DY-T1-GE3 DISTI # SI4048DY-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 19.3A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 2262In Stock |
|
| SI4048DY-T1-GE3 DISTI # SI4048DY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 19.3A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 2262In Stock |
|
| SI4048DY-T1-GE3 DISTI # SI4048DY-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 19.3A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI4048DY-T1-GE3 DISTI # 31029392 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12.7A 8-Pin SOIC N T/R RoHS: Compliant | 2475 |
|
| SI4048DY-T1-GE3 DISTI # 78-SI4048DY-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3 RoHS: Compliant | 0 | |
| SI4048DY-T1-GE3 DISTI # 2056682 | Vishay Intertechnologies | MOSFET, N CH, W/D, 30V, 19.3A, SO8 RoHS: Compliant | 14124 |
|
| SI4048DY-T1-GE3 DISTI # 2056682 | Vishay Intertechnologies | MOSFET, N CH, W/D, 30V, 19.3A, SO8 RoHS: Compliant | 14024 |
|
| SI4048DYT1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 19.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 2500 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: SI4048DY-T1-GE3 OMO.#: OMO-SI4048DY-T1-GE3 |
MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3 |
|
Mfr.#: SI4048DY-T1-E3 OMO.#: OMO-SI4048DY-T1-E3-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: SI4048DY-T1-GE3 OMO.#: OMO-SI4048DY-T1-GE3-VISHAY |
MOSFET N-CH 30V 19.3A 8SOIC |
|
|
Mfr.#: SI4048DYT1GE3 OMO.#: OMO-SI4048DYT1GE3-1190 |
Small Signal Field-Effect Transistor, 19.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
