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CSD88537NDT

CSD88537NDT
Mfr. #:
CSD88537NDT
Сипаттама:
MOSFET 60V Dual NCh NexFET Pwr MOSFET
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
CSD88537NDT Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
CSD88537NDT Көбірек ақпарат CSD88537NDT Product Details
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Texas Instruments
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
SOIC-8
Арналар саны:
2 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
60 V
Идентификатор - үздіксіз төгу тогы:
16 A
Rds On - ағызу көзіне қарсылық:
15 mOhms
Vgs th - Gate-Source шекті кернеуі:
2.6 V
Vgs - Шлюз көзі кернеуі:
10 V
Qg - қақпа заряды:
14 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
2.1 W
Конфигурация:
Қосарлы
Арна режимі:
Жақсарту
Сауда атауы:
NexFET
Қаптама:
Ролик
Биіктігі:
1.75 mm
Ұзындығы:
4.9 mm
Серия:
CSD88537ND
Транзистор түрі:
2 N-Channel
Ені:
3.9 mm
Бренд:
Texas Instruments
Форвард өткізгіштік - Мин:
42 S
Әзірлеу жинағы:
DRV8308EVM, DRV8307EVM, BOOST-DRV8711
Күз уақыты:
19 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
15 ns
Зауыттық буманың саны:
250
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
5 ns
Қосудың әдеттегі кешігу уақыты:
6 ns
Бірлік салмағы:
0.019048 oz
Tags
CSD88537, CSD8853, CSD885, CSD88, CSD8, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
60-V, N channel NexFET™ power MOSFET, dual SO-8, 15 mOhm 8-SOIC -55 to 150
***et Europe
Transistor MOSFET Array Dual N-CH 60V 15A 8-Pin SOIC T/R
*** Electronics
TEXAS INSTRUMENTS CSD88537NDTDual MOSFET, Dual N Channel, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
*** Stop Electro
Small Signal Field-Effect Transistor, 8A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL N-CH, 60V, 15A, SOIC-8; Polarité transistor: Double canal N; Courant de drain Id: 15A; Tension Vds max..: 60V; Résistance Rds(on): 0.0125ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 3V; Dissipation de puis
***ark
Mosfet, Dual N-Ch, 60V, 15A, Soic-8; Transistor Polarity:dual N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0125Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ark
Mosfet Transistor, N Channel, 12 A, 60 V, 9.4 Mohm, 10 V, 4.9 V
***ure Electronics
Single N-Channel 60 V 9.4 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET; N Ch.; 60V; 12A; 9.4 MOHM; 26 NC QG; SO-8; Pb-Free
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS
***nell
MOSFET, N, 60V, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0094ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipa
***roFlash
Small Signal Field-Effect Transistor, 12A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***(Formerly Allied Electronics)
IRF7351PBF Dual N-channel MOSFET Transistor; 8 A; 60 V; 8-Pin SOIC
***ure Electronics
Dual N-Channel 60 V 17.8 mOhm 24 nC HEXFET® Power Mosfet - SOIC-8
***sible Micro
Transistor, MOSFET, N-Channel, Dual, 60V, 8A, 2W, 8-SOIC
***roFlash
Power Field-Effect Transistor, 8A I(D), 60V, 0.0178ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Compatible with Existing Surface Mount Techniques; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Dual N-Channel MOSFET
***nell
MOSFET,NN CH,60V,8A,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0137ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipa
***(Formerly Allied Electronics)
MOSFET; Power; Dual N; 60 V; + 20 V; 2.4 W; SO-8; 75 A (Continuous); -55 degC
***et
Trans MOSFET N-CH 60V 3.7A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, DUAL, N, SO-8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.4W; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id:3.7A; Current Id Max:3.7A; Drain Source Voltage Vds:60V; Module Configuration:Dual; On Resistance Rds(on):80mohm; Package / Case:SOIC; Power Dissipation Pd:2.4W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
***et Japan
Transistor MOSFET Array Dual N-CH 60V 6.6A 8-Pin SOIC T/R
***ure Electronics
Dual N-Channel 60 V 40 mO Surface Mount Enhancement Mode Mosfet - SOIC-8
***nell
MOSFET, DUAL N-CH, 60V, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 1.3W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***et Europe
Trans MOSFET N-CH 60V 21.5A 8-Pin PowerPAK SO T/R
*** Americas
MOSFET 60V 6mOhm@10V 60A N-Ch G-IV
***i-Key
MOSFET N-CH 60V 60A PPAK SO-8
***ark
N-Channel 60-V (D-S) Mosfet
*** Europe
N-CH POWERPAK 60V SO-8 BWL
***ure Electronics
Single N-Channel 60 V 55 mOhm 22.4 nC 1.5 W Silicon Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 60V 5.5A Automotive 8-Pin SO T/R
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***roFlash
Small Signal Field-Effect Transistor
***AS USD
This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low current motor control applications.
Бөлім № Сипаттама Қор Бағасы
CSD88537NDT
DISTI # V39:1801_07248929		Trans MOSFET N-CH Si 60V 15A 8-Pin SOIC T/R
RoHS: Compliant		500
  • 1250:$0.6425
  • 750:$0.7251
  • 500:$0.8202
  • 250:$0.9175
CSD88537NDT
DISTI # 296-37795-1-ND		MOSFET 2N-CH 60V 15A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7327In Stock
  • 100:$1.1431
  • 10:$1.4460
  • 1:$1.6300
CSD88537NDT
DISTI # 296-37795-6-ND		MOSFET 2N-CH 60V 15A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7327In Stock
  • 100:$1.1431
  • 10:$1.4460
  • 1:$1.6300
CSD88537NDT
DISTI # 296-37795-2-ND		MOSFET 2N-CH 60V 15A 8SOIC
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		7250In Stock
  • 1250:$0.6795
  • 750:$0.7520
  • 500:$0.8607
  • 250:$0.9740
CSD88537NDT
DISTI # 30716819		Trans MOSFET N-CH Si 60V 15A 8-Pin SOIC T/R
RoHS: Compliant		500
  • 1250:$0.6425
  • 750:$0.7251
  • 500:$0.8202
  • 250:$0.9175
CSD88537NDT
DISTI # CSD88537NDT		Trans MOSFET N-CH 60V 8A 8-Pin SOIC T/R - Tape and Reel (Alt: CSD88537NDT)
RoHS: Compliant
Min Qty: 750
Container: Reel		Americas - 0
  • 750:$0.6569
  • 1250:$0.6249
  • 2000:$0.6039
  • 3750:$0.5839
  • 7500:$0.5679
CSD88537NDT
DISTI # 68X2372		Dual MOSFET, Dual N Channel, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V RoHS Compliant: Yes4309
  • 100:$0.9740
  • 50:$1.0700
  • 25:$1.1700
  • 10:$1.2700
  • 1:$1.4900
CSD88537NDT60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND4385
  • 1000:$0.5200
  • 750:$0.5600
  • 500:$0.6800
  • 250:$0.8200
  • 100:$0.8800
  • 25:$1.0200
  • 10:$1.0900
  • 1:$1.2200
CSD88537ND
DISTI # 595-CSD88537ND		MOSFET 60-V Dual N-Channel Power MOSFET
RoHS: Compliant		8142
  • 1:$1.2900
  • 10:$1.1000
  • 100:$0.8480
  • 500:$0.7490
  • 1000:$0.5910
  • 2500:$0.5250
  • 10000:$0.5050
CSD88537NDT
DISTI # 595-CSD88537NDT		MOSFET 60V Dual NCh NexFET Pwr MOSFET
RoHS: Compliant		985
  • 1:$1.4900
  • 10:$1.2700
  • 100:$0.9740
  • 250:$0.9740
  • 500:$0.8610
  • 1000:$0.6800
  • 2500:$0.6030
  • 10000:$0.5800
CSD88537NDT
DISTI # 2430179		MOSFET, DUAL N-CH, 60V, 15A, SOIC-8
RoHS: Compliant		5389
  • 500:£0.6480
  • 250:£0.6960
  • 100:£0.7440
  • 25:£0.9700
  • 5:£1.0700
CSD88537NDT
DISTI # 2430179RL		MOSFET, DUAL N-CH, 60V, 15A, SOIC-8
RoHS: Compliant		0
  • 100:$1.5500
  • 250:$1.5500
  • 10:$2.0100
  • 1:$2.3700
CSD88537NDT
DISTI # 2430179		MOSFET, DUAL N-CH, 60V, 15A, SOIC-8
RoHS: Compliant		4289
  • 100:$1.5500
  • 250:$1.5500
  • 10:$2.0100
  • 1:$2.3700
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Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1984
Саны енгізіңіз:
CSD88537NDT ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,35 $
1,35 $
10
1,16 $
11,60 $
100
0,89 $
88,70 $
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