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BSZ0910NDXTMA1

BSZ0910NDXTMA1
Mfr. #:
BSZ0910NDXTMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET DIFFERENTIATED MOSFETS
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSZ0910NDXTMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
BSZ0910NDXTMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PG-WISON-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
30 V
Идентификатор - үздіксіз төгу тогы:
25 A
Rds On - ағызу көзіне қарсылық:
9.5 mOhms
Vgs th - Gate-Source шекті кернеуі:
1.2 V
Vgs - Шлюз көзі кернеуі:
10 V
Qg - қақпа заряды:
4 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
31 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Ролик
Транзистор түрі:
1 N-Channel
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
33 S
Күз уақыты:
2.8 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
3.2 ns
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
18.5 ns
Қосудың әдеттегі кешігу уақыты:
6.2 ns
Бөлім # Бүркеншік аттар:
BSZ0910ND SP001699886
Tags
BSZ09, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
OptiMOS Power Transistor MOSFET Dual N-Channel 60V 25A 8-Pin PG-WISON T/R
***ical
Trans MOSFET N-CH 30V 11.1A 8-Pin WISON EP T/R
***ronik
2xN-CH 30V 25A 9,5mOhm WISON-8
***i-Key
DIFFERENTIATED MOSFETS
***ark
Mosfet, Dual N-Ch, 30V, 25A, 31W, Wison; Transistor Polarity:dual N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0077Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, DUAL N-CH, 30V, 25A, 31W, WISON; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:31W; Transistor Case Style:WISON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, DOPP CAN-N, 30V, 25A, 31W, WISON; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:25A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0077ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.6V; Dissipazione di Potenza Pd:31W; Modello Case Transistor:WISON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
Inductive Wireless Charging Solutions
Infineon Technologies Inductive Wireless Charging Solutions use electromagnetic fields to transfer power from a transmitter to a receiver application. This technology charges batteries without a physical connection, all thanks to a wireless charging power supply. The benefits for wireless charging in applications are not having to plug in a device and no plug compatibility issues. It’s also safer since there is no contact with exposed electrical connectors. Wireless charging is more reliable in harsher environments, like drilling and mining. It also allows for seamless on-the-go charging whether in the car or in public places. Finally, it eliminates tangled charging cables while charging multiple devices in parallel.
Бөлім № Mfg. Сипаттама Қор Бағасы
BSZ0910NDXTMA1
DISTI # V72:2272_19082117		Infineon Technologies AGBSZ0910ND4700
  • 75000:$0.4537
  • 30000:$0.4555
  • 15000:$0.4574
  • 6000:$0.4678
  • 3000:$0.4921
  • 1000:$0.4975
  • 500:$0.6360
  • 250:$0.7336
  • 100:$0.7529
  • 50:$0.8349
  • 25:$0.9277
  • 10:$1.0307
  • 1:$1.3269
BSZ0910NDXTMA1
DISTI # BSZ0910NDXTMA1CT-ND		Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4942In Stock
  • 1000:$0.6033
  • 500:$0.7642
  • 100:$0.9251
  • 10:$1.1870
  • 1:$1.3300
BSZ0910NDXTMA1
DISTI # BSZ0910NDXTMA1DKR-ND		Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4942In Stock
  • 1000:$0.6033
  • 500:$0.7642
  • 100:$0.9251
  • 10:$1.1870
  • 1:$1.3300
BSZ0910NDXTMA1
DISTI # BSZ0910NDXTMA1TR-ND		Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.4998
  • 5000:$0.5194
BSZ0910NDXTMA1
DISTI # 26736840		Infineon Technologies AGBSZ0910ND4700
  • 15000:$0.4574
  • 6000:$0.4678
  • 3000:$0.4921
  • 1000:$0.4975
  • 500:$0.6360
  • 250:$0.7336
  • 100:$0.7529
  • 50:$0.8349
  • 25:$0.9277
  • 14:$1.0307
BSZ0910NDXTMA1
DISTI # SP001699886		Infineon Technologies AGOptiMOS Power Transistor MOSFET Dual N-Channel 60V 25A 8-Pin PG-WISON T/R (Alt: SP001699886)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 5000
  • 50000:€0.4589
  • 30000:€0.4899
  • 20000:€0.5629
  • 10000:€0.6739
  • 5000:€0.8039
BSZ0910NDXTMA1
DISTI # BSZ0910NDXTMA1		Infineon Technologies AGOptiMOS Power Transistor MOSFET Dual N-Channel 60V 25A 8-Pin PG-WISON T/R - Tape and Reel (Alt: BSZ0910NDXTMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.4719
  • 30000:$0.4809
  • 20000:$0.4969
  • 10000:$0.5159
  • 5000:$0.5349
BSZ0910NDXTMA1
DISTI # 93AC6986		Infineon Technologies AGMOSFET, DUAL N-CH, 30V, 25A, 31W, WISON,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,RoHS Compliant: Yes5000
  • 1000:$0.5640
  • 500:$0.7140
  • 250:$0.7610
  • 100:$0.8080
  • 50:$0.8890
  • 25:$0.9700
  • 10:$1.0500
  • 1:$1.2300
BSZ0910NDXTMA1
DISTI # 726-BSZ0910NDXTMA1		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant		65
  • 1:$1.2200
  • 10:$1.0400
  • 100:$0.8000
  • 500:$0.7070
  • 1000:$0.5580
  • 5000:$0.4950
  • 10000:$0.4770
BSZ0910NDXTMA1
DISTI # 2986396		Infineon Technologies AGMOSFET, DUAL N-CH, 30V, 25A, 31W, WISON5000
  • 500:£0.5120
  • 250:£0.5460
  • 100:£0.5800
  • 10:£0.8070
  • 1:£1.0200
BSZ0910NDXTMA1
DISTI # 2986396		Infineon Technologies AGMOSFET, DUAL N-CH, 30V, 25A, 31W, WISON
RoHS: Compliant		5000
  • 1000:$0.7300
  • 500:$0.8190
  • 250:$0.8790
  • 100:$0.9360
  • 25:$1.1500
  • 5:$1.2300
BSZ0910NDXTMA1
DISTI # XSKDRABV0044665		Infineon Technologies AG 
RoHS: Compliant		15000 in Stock0 on Order
  • 15000:$0.6387
  • 5000:$0.6843
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Қол жетімділік
Қор:
165
Тапсырыс бойынша:
2148
Саны енгізіңіз:
BSZ0910NDXTMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,22 $
1,22 $
10
1,04 $
10,40 $
100
0,80 $
80,00 $
500
0,71 $
353,50 $
1000
0,56 $
558,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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