IGW30N60H3

IGW30N60H3
Mfr. #:
IGW30N60H3
Өндіруші:
Infineon Technologies
Сипаттама:
IGBT Transistors 600V HI SPEED SW IGBT
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IGW30N60H3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші
INFINEON
Өнім санаты
IGBT - жалғыз
Сериялар
IGW30N60
Қаптама
Түтік
Бөлік бүркеншік аттар
IGW30N60H3FKSA1 IGW30N60H3XK SP000852242
Монтаждау стилі
Тесік арқылы
Пакет-қорап
PG-TO-247-3
Pd-қуат-диссипация
187 W
Коллектор-эмиттер-кернеу-VCEO-Макс
600 V
Коллектор-эмиттер-Қанығу-кернеу
2.4 V
Үздіксіз коллекторлық ток 25-С
60 A
Шлюз-эмиттер-ағып кету-ток
100 nA
Максималды-Гейт-Эмитатор-кернеу
20 V
Үздіксіз-коллектор-ток-Ic-Макс
30 A
Tags
IGW30N60H, IGW30N60, IGW30N6, IGW30N, IGW3, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IGW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247
***ical
Trans IGBT Chip N=-CH 600V 60A 187000mW 3-Pin(3+Tab) TO-247 Tube
***p One Stop Japan
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
***et
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247
***et Europe
Trans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube
***ronik
IGBT 600V 60A 2.40V TO247-3
***i-Key
IGBT 600V 60A 187W TO247-3
***ark
Transistor, Igbt, 600V, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.95V; Power Dissipation Pd:187W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. TRANSISTOR, IGBT, 600V, 60A, TO-247; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP™ Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
TRANSISTOR, IGBT, 600V, 60A, TO-247; Corrente di Collettore CC:60A; Tensione Saturaz Collettore-Emettitore Vce(on):1.95V; Dissipazione di Potenza Pd:187W; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP™ Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
Бөлім № Mfg. Сипаттама Қор Бағасы
IGW30N60H3FKSA1
DISTI # 24580267
Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
189
  • 7:$1.4517
IGW30N60H3
DISTI # 30577650
Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247
RoHS: Compliant
120
  • 100:$2.5118
  • 50:$2.7157
  • 10:$3.3533
  • 5:$5.2530
IGW30N60H3FKSA1
DISTI # 26197177
Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
42
  • 4:$1.7430
IGW30N60H3FKSA1
DISTI # V99:2348_06377101
Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
42
  • 1:$1.7430
IGW30N60H3FKSA1
DISTI # V36:1790_06377101
Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
  • 240:$1.5240
IGW30N60H3
DISTI # SP000852242
Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube (Alt: SP000852242)
Min Qty: 1
Container: Tube
Europe - 103
    IGW30N60H3
    DISTI # IGW30N60H3FKSA1
    Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW30N60H3FKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube
    Americas - 0
      IGW30N60H3
      DISTI # IGW30N60H3
      Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube - Bulk (Alt: IGW30N60H3)
      Min Qty: 191
      Container: Bulk
      Americas - 0
        IGW30N60H3FKSA1
        DISTI # 13AC9001
        Infineon Technologies AGTRANSISTOR, IGBT, 600V, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.95V,Power Dissipation Pd:187W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes
        RoHS: Compliant
        488
        • 1:$1.3400
        • 10:$1.3400
        • 25:$1.3400
        • 50:$1.3400
        • 100:$1.3400
        • 250:$1.3400
        • 500:$1.3400
        IGW30N60H3
        DISTI # 726-IGW30N60H3
        Infineon Technologies AGIGBT Transistors 600V HI SPEED SW IGBT
        RoHS: Compliant
        337
        • 1:$3.4700
        • 10:$2.9500
        • 100:$2.5500
        • 250:$2.4200
        • 500:$2.1700
        IGW30N60H3Infineon Technologies AGInsulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
        RoHS: Compliant
        20
        • 1000:$1.7300
        • 500:$1.8200
        • 100:$1.8900
        • 25:$1.9800
        • 1:$2.1300
        IGW30N60H3FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
        RoHS: Compliant
        1680
        • 1000:$1.4900
        • 500:$1.5700
        • 100:$1.6300
        • 25:$1.7000
        • 1:$1.8300
        IGW30N60H3FKSA1
        DISTI # 1107737
        Infineon Technologies AGIn a Pack of 6, Infineon IGW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, PK
        Min Qty: 6
        Container: Package
        240
        • 6:$4.4440
        • 12:$3.5230
        • 60:$3.2870
        • 120:$3.0500
        • 300:$2.8860
        IGW30N60H3FKSA1
        DISTI # 1458592
        Infineon Technologies AGIn a Tube of 30, Infineon IGW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, TU
        Min Qty: 30
        Container: Tube
        0
        • 30:$3.5600
        IGW30N60H3
        DISTI # IGW30N60H3
        Infineon Technologies AGTransistor: IGBT,600V,30A,187W,TO247-3144
        • 100:$2.1300
        • 25:$2.5200
        • 5:$3.1600
        • 1:$3.4300
        IGW30N60H3
        DISTI # IGW30N60H3
        Infineon Technologies AGTransistor: IGBT,600V,30A,187W,TO247-3144
        • 100:$2.1200
        • 25:$2.5100
        • 5:$3.1500
        • 1:$3.4200
        IGW30N60H3
        DISTI # IGBT1229
        Infineon Technologies AGIGBT600V60A2.40VTO247-3
        RoHS: Compliant
        Stock DE - 6150Stock HK - 0Stock US - 0
        • 30:$1.9700
        • 60:$1.8500
        • 90:$1.8300
        • 150:$1.7900
        • 240:$1.6800
        IGW30N60H3FKSA1
        DISTI # 2725780
        Infineon Technologies AGTRANSISTOR, IGBT, 600V, 60A, TO-247
        RoHS: Compliant
        482
        • 1000:£2.1400
        • 500:£2.1800
        • 250:£2.2400
        • 100:£2.2800
        • 10:£2.3300
        • 1:£2.3800
        IGW30N60H3FKSA1
        DISTI # 2725780
        Infineon Technologies AGTRANSISTOR, IGBT, 600V, 60A, TO-247
        RoHS: Compliant
        478
        • 100:$2.9700
        • 10:$3.5600
        • 1:$3.7300
        Сурет Бөлім № Сипаттама
        IGW30N60TPXKSA1

        Mfr.#: IGW30N60TPXKSA1

        OMO.#: OMO-IGW30N60TPXKSA1

        IGBT Transistors The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off ener
        IGW30N65L5XKSA1

        Mfr.#: IGW30N65L5XKSA1

        OMO.#: OMO-IGW30N65L5XKSA1

        IGBT Transistors 650V IGBT Trenchstop 5
        IGW30N60H3

        Mfr.#: IGW30N60H3

        OMO.#: OMO-IGW30N60H3

        IGBT Transistors 600V HI SPEED SW IGBT
        IGW30N100TFKSA1

        Mfr.#: IGW30N100TFKSA1

        OMO.#: OMO-IGW30N100TFKSA1

        IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
        IGW30N60H3FKSA1

        Mfr.#: IGW30N60H3FKSA1

        OMO.#: OMO-IGW30N60H3FKSA1

        IGBT Transistors IGBT PRODUCTS
        IGW30N60H3  G30H603

        Mfr.#: IGW30N60H3 G30H603

        OMO.#: OMO-IGW30N60H3-G30H603-1190

        Жаңа және түпнұсқа
        IGW30T60

        Mfr.#: IGW30T60

        OMO.#: OMO-IGW30T60-1190

        Жаңа және түпнұсқа
        IGW30N60TXK

        Mfr.#: IGW30N60TXK

        OMO.#: OMO-IGW30N60TXK-1190

        Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IGW30N60TFKSA1)
        IGW30N65L5XKSA1

        Mfr.#: IGW30N65L5XKSA1

        OMO.#: OMO-IGW30N65L5XKSA1-INFINEON-TECHNOLOGIES

        IGBT Transistors 650V IGBT Trenchstop 5
        IGW30N60H3

        Mfr.#: IGW30N60H3

        OMO.#: OMO-IGW30N60H3-126

        IGBT Transistors 600V HI SPEED SW IGBT
        Қол жетімділік
        Қор:
        Available
        Тапсырыс бойынша:
        4000
        Саны енгізіңіз:
        IGW30N60H3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
        Анықтамалық баға (USD)
        Саны
        Тауар өлшемінің бағасы
        Қосымша. Бағасы
        1
        2,08 $
        2,08 $
        10
        1,98 $
        19,81 $
        100
        1,88 $
        187,65 $
        500
        1,77 $
        886,15 $
        1000
        1,67 $
        1 668,00 $
        -ден бастаңыз
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