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STU13N60M2

STU13N60M2
Mfr. #:
STU13N60M2
Өндіруші:
STMicroelectronics
Сипаттама:
MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
STU13N60M2 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
STU13N60M2 Көбірек ақпарат STU13N60M2 Product Details
Өнім атрибуты
Төлсипат мәні
Өндіруші:
STMicroelectronics
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-251-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
650 V
Идентификатор - үздіксіз төгу тогы:
11 A
Rds On - ағызу көзіне қарсылық:
380 mOhms
Vgs th - Gate-Source шекті кернеуі:
3 V
Vgs - Шлюз көзі кернеуі:
25 V
Qg - қақпа заряды:
17 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
110 W
Конфигурация:
Бойдақ
Сауда атауы:
MDmesh
Қаптама:
Түтік
Серия:
STU13N60M2
Транзистор түрі:
1 N-Channel
Бренд:
STMicroelectronics
Күз уақыты:
9.5 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
10 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
41 ns
Қосудың әдеттегі кешігу уақыты:
11 ns
Бірлік салмағы:
0.139332 oz
Tags
STU13N, STU13, STU1, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 0.39 Ohm Through Hole MDmesh M2 II Plus Mosfet - IPAK
***p One Stop
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) IPAK Tube
***(Formerly Allied Electronics)
Power MOSFET Nch MDmesh II plus 600V 11A
***icroelectronics SCT
Power MOSFETs, 600V, 11A, IPAK, Tube
***icroelectronics
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in IPAK package
***ical
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) IPAK Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics SCT
Power MOSFETs, 600V, 11A, IPAK, Tube
***icroelectronics
N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in IPAK package
***r Electronics
Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) IPAK Tube
***enic
600V 12A 280m´Î@10V6A 110W 3V@250uA 1.2pF@100V N Channel 700pF@100v 19nC@10V +150¡Í@(Tj) TO-251(I-PAK) MOSFETs ROHS
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK
*** Stop Electro
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***icroelectronics
N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in IPAK package
***r Electronics
Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N CH, 600V, 8A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
***el Electronic
VISHAY SIHU7N60E-GE3 Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) IPAK
***S
French Electronic Distributor since 1988
***nell
MOSFET, N-CH, 600V, 7A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***ure Electronics
IRFU430A Series N-Channel 500 V 2 Ohm 110 W Power Mosfet - IPAK (TO-251)
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 500V,RDS(ON) 1.7 Ohms,ID 5A,I-Pak,PD 110W,VGS+/-30V,-55C
*** Stop Electro
Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:5A; On Resistance, Rds(on):1.7ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 500V, 5A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:5A; Junction to Case Thermal Resistance A:1.1°C/W; On State resistance @ Vgs = 10V:1.7kohm; Package / Case:IPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:20A; Termination Type:Through Hole; Turn Off Time:16ns; Turn On Time:27ns; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Бөлім № Mfg. Сипаттама Қор Бағасы
STU13N60M2
DISTI # 497-13885-5-ND		STMicroelectronicsMOSFET N-CH 600V 11A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		3000In Stock
  • 5025:$1.0442
  • 2550:$1.0844
  • 525:$1.4057
  • 150:$1.7109
  • 75:$2.0081
  • 10:$2.1290
  • 1:$2.3700
STU13N60M2
DISTI # STU13N60M2		STMicroelectronicsTrans MOSFET N-CH 600V 11A 3-Pin IPAK Tube (Alt: STU13N60M2)
RoHS: Compliant
Min Qty: 75
Container: Tube		Europe - 3174
  • 750:€0.6499
  • 450:€0.6999
  • 300:€0.7589
  • 150:€0.8279
  • 75:€1.0119
STU13N60M2
DISTI # STU13N60M2		STMicroelectronicsTrans MOSFET N-CH 600V 11A 3-Pin IPAK Tube - Rail/Tube (Alt: STU13N60M2)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 30000:$0.9769
  • 18000:$0.9969
  • 12000:$1.0429
  • 6000:$1.0919
  • 3000:$1.1459
STU13N60M2
DISTI # 06X3750		STMicroelectronicsPTD HIGH VOLTAGE0
  • 5000:$0.9950
  • 2500:$1.0300
  • 1000:$1.2700
  • 500:$1.4200
  • 100:$1.5300
  • 10:$1.9100
  • 1:$2.2500
STU13N60M2
DISTI # 511-STU13N60M2		STMicroelectronicsMOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2
RoHS: Compliant		0
  • 3000:$1.0400
STU13N60M2
DISTI # STU13N60M2		STMicroelectronicsTransistor: N-MOSFET,unipolar,600V,7A,110W,IPAK55
  • 50:$1.4400
  • 10:$1.6000
  • 3:$2.0000
  • 1:$2.3200
STU13N60M2
DISTI # TMOSP11424		STMicroelectronicsN-CH 600V 11A 380mOhmTO251-3
RoHS: Compliant		Stock DE - 2850Stock HK - 0Stock US - 0
  • 75:$0.9933
  • 150:$0.9365
  • 300:$0.8798
  • 450:$0.7946
  • 750:$0.7662
STU13N60M2STMicroelectronics600V,0.35,11A,N-Channel Power MOSFET116
  • 1:$1.0900
  • 100:$0.9700
  • 500:$0.9200
  • 1000:$0.8300
STU13N60M2
DISTI # XSKDRABS0031159		STMicroelectronicsParallel I/O Port, 4 I/O, CMOS, PDSO8
RoHS: Compliant		2550 in Stock0 on Order
  • 2550:$0.9240
  • 750:$0.9900
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 Cap Ceramic 1uF 50V X5R 10% Pad SMD 0603 85C Automotive T/R
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Mfr.#: NCP43080DDR2G

OMO.#: OMO-NCP43080DDR2G-ON-SEMICONDUCTOR

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GRM188R6YA475KE15D

Mfr.#: GRM188R6YA475KE15D

OMO.#: OMO-GRM188R6YA475KE15D-MURATA-ELECTRONICS

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 4.7uF 35volts X5R 10%
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Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
2500
Саны енгізіңіз:
STU13N60M2 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
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