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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BSZ088N03MSGATMA1 DISTI # BSZ088N03MSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 9403In Stock |
|
| BSZ088N03MSGATMA1 DISTI # BSZ088N03MSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 9403In Stock |
|
| BSZ088N03MSGATMA1 DISTI # BSZ088N03MSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 5000In Stock |
|
| BSZ088N03MSG DISTI # SP000311509 | Infineon Technologies AG | Trans MOSFET N-CH 30V 11A 8-Pin TSDSON T/R (Alt: SP000311509) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 10000 |
|
| BSZ088N03MSGATMA1 DISTI # BSZ088N03MSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 11A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ088N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSZ088N03MSGATMA1 DISTI # SP000311509 | Infineon Technologies AG | Trans MOSFET N-CH 30V 11A 8-Pin TSDSON EP (Alt: SP000311509) RoHS: Compliant Min Qty: 5000 | Europe - 0 |
|
| BSZ088N03MSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 40A I(D), 30V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 40000 |
|
| BSZ088N03MSG | Infineon Technologies AG | Power Field-Effect Transistor, 40A I(D), 30V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 985 |
|
| BSZ088N03MS G DISTI # 726-BSZ088N03MSG | Infineon Technologies AG | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M RoHS: Compliant | 2950 |
|
| BSZ088N03MS G | Infineon Technologies AG | 100 | ||
| BSZ088N03MS G | Infineon Technologies AG | 4682 | ||
| BSZ088N03MSG | Infineon Technologies AG | 3687 | ||
| BSZ088N03MSG | Infineon Technologies AG | 30V,8m,40A,N-Channel Power MOSFET | 4000 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: 088N03L OMO.#: OMO-088N03L-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: 088N03M OMO.#: OMO-088N03M-1190 |
Жаңа және түпнұсқа |
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Mfr.#: 088N03MS OMO.#: OMO-088N03MS-1190 |
Жаңа және түпнұсқа |
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Mfr.#: 088N04L OMO.#: OMO-088N04L-1190 |
Жаңа және түпнұсқа |
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Mfr.#: 088N06 OMO.#: OMO-088N06-1190 |
Жаңа және түпнұсқа |
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Mfr.#: 088N06N OMO.#: OMO-088N06N-1190 |
Жаңа және түпнұсқа |
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Mfr.#: 088N3753 OMO.#: OMO-088N3753-1190 |
Жаңа және түпнұсқа |