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CSD19537Q3T

CSD19537Q3T
Mfr. #:
CSD19537Q3T
Сипаттама:
MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 14.5mOhm 8-VSON-CLIP -55 to 150
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
CSD19537Q3T Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
CSD19537Q3T Көбірек ақпарат CSD19537Q3T Product Details
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Texas Instruments
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
VSON-CLIP-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
100 V
Идентификатор - үздіксіз төгу тогы:
53 A
Rds On - ағызу көзіне қарсылық:
14.5 mOhms
Vgs th - Gate-Source шекті кернеуі:
2.6 V
Vgs - Шлюз көзі кернеуі:
10 V
Qg - қақпа заряды:
16 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
83 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
NexFET
Қаптама:
Ролик
Биіктігі:
1 mm
Ұзындығы:
3.3 mm
Серия:
CSD19537Q3
Транзистор түрі:
1 N-Channel
Ені:
3.3 mm
Бренд:
Texas Instruments
Форвард өткізгіштік - Мин:
45 S
Күз уақыты:
3 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
3 ns
Зауыттық буманың саны:
250
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
10 ns
Қосудың әдеттегі кешігу уақыты:
5 ns
Бірлік салмағы:
0.000847 oz
Tags
CSD1953, CSD19, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
100V, N ch NexFET MOSFET™, single SON3x3, 14.5mOhm 8-VSON-CLIP -55 to 150
***Components
In a Pack of 5, Texas Instruments CSD19537Q3T MOSFET
***ical
Trans MOSFET N-CH Si 100V 50A 8-Pin VSON-CLIP EP T/R
***et Europe
Trans MOSFET N-CH 100V 50A 8-Pin VSON-CLIP T/R
***i-Key
MOSFET N-CH 100V 50A 8VSON
***ark
Mosfet, N-Ch, 100V, 50A, Vson-8; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0121Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 50A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0121ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:VSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, N-CH, 100V, 50A, VSON-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0121ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:83W; Modello Case Transistor:VSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
***AS INSTRUMENTS INCORPORATED
This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
CSD19537Q3 N-Channel NexFET™ Power MOSFETs
OMO Electronic CSD19537Q3 N-Channel NexFET™ Power MOSFETs are a 100V 12.1mΩ N-Channel NexFET™ power MOSFET that is designed to minimize losses in power conversion applications. This MOSFET features an ultra-low Qg and Qgd with low thermal resistance. It is also avalanche rated and comes in Pb-Free, halogen free RoHS complant SON-8 3.3mmx3.3mm plastic package. Typical applications include primary side isolated converters and motor control.Learn More
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Қол жетімділік
Қор:
15
Тапсырыс бойынша:
1998
Саны енгізіңіз:
CSD19537Q3T ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,36 $
1,36 $
10
1,16 $
11,60 $
100
0,89 $
89,00 $
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