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IRF200P222

IRF200P222
Mfr. #:
IRF200P222
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET IFX OPTIMOS
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IRF200P222 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IRF200P222 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-247AC-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
200 V
Идентификатор - үздіксіз төгу тогы:
182 A
Rds On - ағызу көзіне қарсылық:
6.6 mOhms
Vgs th - Gate-Source шекті кернеуі:
2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
203 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
StrongIRFET
Қаптама:
Түтік
Транзистор түрі:
1 N-Channel
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
142 S
Күз уақыты:
97 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
96 ns
Зауыттық буманың саны:
400
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
77 ns
Қосудың әдеттегі кешігу уақыты:
25 ns
Бөлім # Бүркеншік аттар:
SP001582092
Бірлік салмағы:
0.211644 oz
Tags
IRF200, IRF20, IRF2, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-CH 200V 182A 3-Pin TO-247AC Tube
***ure Electronics
Single N-Channel 200 V 6.6 mOhm 135 nC StrongIRFET™ IR Mosfet - TO-247AC
***ical
Trans MOSFET N-CH 200V 182A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans MOSFET N-CH 200V 182A Strong RFET 3TO-247AC
***i-Key
MOSFET N-CH 200V 182A TO247AC
***ark
Mosfet, N-Ch, 200V, 182A, 556W, To-247Ac; Transistor Polarity:n Channel; Continuous Drain Current Id:182A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.0053Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon
Target Applications: UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 182A, 556W, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:182A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:556W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:StrongIRFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 200V, 182A, 556W, TO-247AC; Polarità Transistor:Canale N; Corrente Continua di Drain Id:182A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.0053ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:556W; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:StrongIRFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
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DISTI # IRF200P222		Infineon Technologies AGTrans MOSFET N-CH 200V 182A Strong RFET 3TO-247AC (Alt: IRF200P222)
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    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    1984
    Саны енгізіңіз:
    IRF200P222 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    7,43 $
    7,43 $
    10
    6,71 $
    67,10 $
    25
    6,40 $
    160,00 $
    100
    5,56 $
    556,00 $
    250
    5,31 $
    1 327,50 $
    500
    4,84 $
    2 420,00 $
    1000
    4,46 $
    4 460,00 $
    -ден бастаңыз
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