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IRF6655TR1

IRF6655TR1
Mfr. #:
IRF6655TR1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-CH 100V DIRECTFET-SH
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IRF6655TR1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6655TR1 DatasheetIRF6655TR1 Datasheet (P4-P6)IRF6655TR1 Datasheet (P7-P9)IRF6655TR1 Datasheet (P10-P11)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Tags
IRF6655TR1, IRF6655T, IRF665, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power; N-Channel; 100 V (Min.); 34 A (Max.); 42 W (Max.) @ degC
***ark
MOSFET, N, DIRECTFET, SH; Transistor type:MOSFET; Voltage, Vds typ:100V; Current, Id cont:19A; Resistance, Rds on:62mohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:4.8V; Case style:SH; Capacitance, Ciss typ:530pF; RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, DIRECTFET, SH; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:100V; On Resistance Rds(on):62mohm; Threshold Voltage Vgs Typ:4.8V; Power Dissipation Pd:4.2W; Transistor Case Style:SH; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:530pF; Charge Qrr @ Tj = 25°C Typ:37nC; Current Temperature:25°C; External Depth:4.85mm; External Length / Height:0.7mm; External Width:3.95mm; Full Power Rating Temperature:25°C; IC Package (Case style):SH; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; No. of Transistors:1; On State Resistance Max:62mohm; Package / Case:SH; Power Dissipation Pd:2.2W; Power Dissipation Pd:4.2W; Pulse Current Idm:34A; Reverse Recovery Time trr Typ:31ns; SMD Marking:6655; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.8V; Voltage Vgs th Min:2.8V
Бөлім № Mfg. Сипаттама Қор Бағасы
IRF6655TR1PBF
DISTI # 23987473		Infineon Technologies AGTrans MOSFET N-CH Si 100V 4.2A 6-Pin Direct-FET SH T/R
RoHS: Compliant		141
  • 55:$1.4031
IRF6655TR1
DISTI # IRF6655TR1-ND		Infineon Technologies AGMOSFET N-CH 100V DIRECTFET-SH
RoHS: Not compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6655TR1PBF
    DISTI # IRF6655TR1PBF-ND    		Infineon Technologies AGMOSFET N-CH 100V 4.2A DIRECTFET
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Limited Supply - Call
      IRF6655TR1PBF
      DISTI # 41M6926      		Infineon Technologies AGTrans MOSFET N-CH 100V 4.2A 6-Pin Direct-FET SH T/R - Product that comes on tape, but is not reeled (Alt: 41M6926)
      RoHS: Compliant
      Min Qty: 1
      Container: Ammo Pack      		Americas - 0
        IRF6655TR1PBF
        DISTI # 41M6926        		Infineon Technologies AGN MOSFET, 100V, 3.4A, DIRECTFET SH,Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes141
        • 1:$0.9120
        • 10:$0.9120
        • 25:$0.9120
        • 50:$0.9120
        • 100:$0.9120
        • 250:$0.9120
        • 500:$0.9120
        IRF6655TR1PBF
        DISTI # 70018849        		Infineon Technologies AGMOSFET,N-Ch,VDSS 100V,RDS(ON) 53 mOhm,ID 4.2A,DirectFET
        RoHS: Compliant        		0
        • 1000:$1.6700
        • 2000:$1.5200
        IRF6655TR1PBFInternational Rectifier 51
          IRF6655TR1PBFInternational Rectifier 883
            IRF6655TR1PBF.
            DISTI # 1375057            		Infineon Technologies AGMOSFET
            RoHS: Compliant            		141
            • 1:£1.3100
            IRF6655TR1
            DISTI # 9266615            		Infineon Technologies AG 
            RoHS: Compliant            		0
            • 1000:$1.5600
            • 500:$1.6800
            • 250:$1.9000
            • 100:$2.1200
            • 10:$2.6200
            • 1:$3.1900
            IRF6655TR1PBF.
            DISTI # 1375057            		Infineon Technologies AGMOSFET
            RoHS: Compliant            		141
            • 1:$2.0000
            Сурет Бөлім № Сипаттама
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            IRF6616TRPBF

            Mfr.#: IRF6616TRPBF

            OMO.#: OMO-IRF6616TRPBF-INFINEON-TECHNOLOGIES

            		 RF Bipolar Transistors MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs
            IRF6631TRPBF

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            OMO.#: OMO-IRF6631TRPBF-INFINEON-TECHNOLOGIES

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            Қол жетімділік
            Қор:
            Available
            Тапсырыс бойынша:
            4500
            Саны енгізіңіз:
            IRF6655TR1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
            Анықтамалық баға (USD)
            Саны
            Тауар өлшемінің бағасы
            Қосымша. Бағасы
            1
            0,00 $
            0,00 $
            10
            0,00 $
            0,00 $
            100
            0,00 $
            0,00 $
            500
            0,00 $
            0,00 $
            1000
            0,00 $
            0,00 $
            -ден бастаңыз
            Ең жаңа өнімдер
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