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BSZ12DN20NS3 G

BSZ12DN20NS3 G
Mfr. #:
BSZ12DN20NS3 G
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSZ12DN20NS3 G Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
BSZ12DN20NS3 G Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TSDSON-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
200 V
Идентификатор - үздіксіз төгу тогы:
11.3 A
Rds On - ағызу көзіне қарсылық:
108 mOhms
Vgs - Шлюз көзі кернеуі:
20 V
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
50 W
Конфигурация:
Бойдақ
Қаптама:
Ролик
Биіктігі:
1.1 mm
Ұзындығы:
3.3 mm
Транзистор түрі:
1 N-Channel
Ені:
3.3 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
12 S, 6 S
Өнім түрі:
MOSFET
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Бөлім # Бүркеншік аттар:
BSZ12DN20NS3GATMA1 BSZ12DN2NS3GXT SP000781784
Бірлік салмағы:
0.003527 oz
Tags
BSZ12DN20NS, BSZ12D, BSZ12, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
Бөлім № Mfg. Сипаттама Қор Бағасы
BSZ12DN20NS3GATMA1
DISTI # V72:2272_06384561		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R
RoHS: Compliant		4816
  • 1:$0.5330
BSZ12DN20NS3GATMA1
DISTI # V36:1790_06384561		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R
RoHS: Compliant		0
  • 5000000:$0.4159
  • 2500000:$0.4161
  • 500000:$0.4428
  • 50000:$0.4905
  • 5000:$0.4986
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 200V 11.3A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5922In Stock
  • 1000:$0.5791
  • 500:$0.7336
  • 100:$0.8880
  • 10:$1.1390
  • 1:$1.2700
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 200V 11.3A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5922In Stock
  • 1000:$0.5791
  • 500:$0.7336
  • 100:$0.8880
  • 10:$1.1390
  • 1:$1.2700
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 200V 11.3A 8TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 10000:$0.4798
  • 5000:$0.4985
BSZ12DN20NS3 G
DISTI # 32907815		Infineon Technologies AG05000
  • 17:$1.5375
BSZ12DN20NS3GATMA1
DISTI # 33936972		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R
RoHS: Compliant		4816
  • 15:$0.5330
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R - Bulk (Alt: BSZ12DN20NS3GATMA1)
RoHS: Compliant
Min Qty: 782
Container: Bulk		Americas - 0
  • 7820:$0.4059
  • 3910:$0.4129
  • 2346:$0.4279
  • 1564:$0.4439
  • 782:$0.4609
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ12DN20NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.4529
  • 30000:$0.4609
  • 20000:$0.4769
  • 10000:$0.4949
  • 5000:$0.5139
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3 G		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R (Alt: BSZ12DN20NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 250000:$0.4519
  • 125000:$0.4577
  • 50000:$0.4636
  • 25000:$0.4697
  • 15000:$0.4824
  • 10000:$0.4958
  • 5000:$0.5100
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3G		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R - Bulk (Alt: BSZ12DN20NS3G)
RoHS: Not Compliant
Min Qty: 758
Container: Bulk		Americas - 0
  • 7580:$0.4569
  • 3790:$0.4649
  • 2274:$0.4809
  • 1516:$0.4999
  • 758:$0.5179
BSZ12DN20NS3GATMA1
DISTI # SP000781784		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R (Alt: SP000781784)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€0.4159
  • 30000:€0.4479
  • 20000:€0.4849
  • 10000:€0.5289
  • 5000:€0.6469
BSZ12DN20NS3GATMA1
DISTI # 13AC8354		Infineon Technologies AGMOSFET, N-CH, 200V, 11.3A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.108ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes779
  • 1000:$0.6120
  • 500:$0.7760
  • 250:$0.8880
  • 100:$1.0000
  • 50:$1.0900
  • 25:$1.1800
  • 10:$1.2700
  • 1:$1.4300
BSZ12DN20NS3 G
DISTI # 726-BSZ12DN20NS3G		Infineon Technologies AGMOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
RoHS: Compliant		13365
  • 1:$1.1700
  • 10:$1.0000
  • 100:$0.7680
  • 500:$0.6790
  • 1000:$0.5360
  • 5000:$0.4750
BSZ12DN20NS3GInfineon Technologies AGPower Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		14295
  • 1000:$0.4700
  • 500:$0.5000
  • 100:$0.5200
  • 25:$0.5400
  • 1:$0.5800
BSZ12DN20NS3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		70155
  • 1000:$0.4200
  • 500:$0.4400
  • 100:$0.4600
  • 25:$0.4800
  • 1:$0.5200
BSZ12DN20NS3GATMA1
DISTI # 8259257P		Infineon Technologies AGMOSFET N-CH 11.3A 200V OPTIMOS3 TSDSON8, RL3720
  • 100:£0.3740
BSZ12DN20NS3GATMA1
DISTI # 2725826		Infineon Technologies AGMOSFET, N-CH, 200V, 11.3A, TSDSON5808
  • 500:£0.6170
  • 250:£0.7070
  • 100:£0.7970
  • 10:£1.0600
  • 1:£1.3100
BSZ12DN20NS3 G
DISTI # C1S322000454510		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.4900
  • 1000:$0.5570
  • 500:$0.5930
  • 200:$0.6410
  • 100:$0.6750
  • 50:$0.7910
  • 10:$0.9290
  • 5:$1.2300
BSZ12DN20NS3GATMA1
DISTI # 2725826		Infineon Technologies AGMOSFET, N-CH, 200V, 11.3A, TSDSON
RoHS: Compliant		719
  • 1000:$0.9270
  • 500:$1.1800
  • 100:$1.5200
  • 10:$1.9200
  • 1:$2.1700
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Mfr.#: LT8620EMSE#PBF

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DO1608C-103MLC

Mfr.#: DO1608C-103MLC

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 Fixed Inductors DO1608C Pwr Inductor 10 uH 20 % 1.5 A
MI0603L221R-10

Mfr.#: MI0603L221R-10

OMO.#: OMO-MI0603L221R-10-LAIRD-TECHNOLOGIES

 EMI Filter Beads, Chips & Arrays 220ohms 100MHz 2A Monolithic 0603 SMD
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Mfr.#: BAV70LT1G

OMO.#: OMO-BAV70LT1G-ON-SEMICONDUCTOR

 Diodes - General Purpose, Power, Switching 70V 200mA Dual Common Cathode
RC0603FR-076K49L

Mfr.#: RC0603FR-076K49L

OMO.#: OMO-RC0603FR-076K49L-YAGEO

 Thick Film Resistors - SMD 6.49K OHM 1%
744272332

Mfr.#: 744272332

OMO.#: OMO-744272332-WURTH-ELECTRONICS

 CMC 3.3MH 650MA 2LN 8.9 KOHM SMD
Қол жетімділік
Қор:
12
Тапсырыс бойынша:
1995
Саны енгізіңіз:
BSZ12DN20NS3 G ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,17 $
1,17 $
10
1,00 $
10,00 $
100
0,77 $
76,80 $
500
0,68 $
339,50 $
1000
0,54 $
536,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
-ден бастаңыз
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