SI4456DY-T1-GE3

SI4456DY-T1-GE3
Mfr. #:
SI4456DY-T1-GE3
Өндіруші:
Vishay / Siliconix
Сипаттама:
MOSFET 40V 33A 7.8W 3.8mohm @ 10V
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SI4456DY-T1-GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4456DY-T1-GE3 DatasheetSI4456DY-T1-GE3 Datasheet (P4-P6)SI4456DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Көбірек ақпарат:
SI4456DY-T1-GE3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Вишай
Өнім санаты:
MOSFET
RoHS:
E
Технология:
Си
Сауда атауы:
TrenchFET
Қаптама:
Ролик
Серия:
SI4
Бренд:
Вишай / Силиконикс
Өнім түрі:
MOSFET
Зауыттық буманың саны:
2500
Ішкі санат:
MOSFETs
Бөлім # Бүркеншік аттар:
SI4456DY-GE3
Бірлік салмағы:
0.006596 oz
Tags
SI4456, SI445, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 40V 23A 8-Pin SOIC N T/R | MOSFET N-CH 40V 33A 8-SOIC
***ment14 APAC
N CHANNEL MOSFET, 40V, 33A, SOIC
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:3.3A; Drain Source Voltage, Vds:40V; On Resistance, Rds(on):0.0045ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:2.8V ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Бөлім № Mfg. Сипаттама Қор Бағасы
SI4456DY-T1-GE3
DISTI # SI4456DY-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 40V 33A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$1.3365
SI4456DY-T1-GE3
DISTI # SI4456DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 23A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4456DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$1.2900
  • 5000:$1.1900
  • 10000:$1.1900
  • 15000:$1.0900
  • 25000:$1.0900
SI4456DY-T1-GE3
DISTI # 26R1878
Vishay IntertechnologiesN CHANNEL MOSFET, 40V, 33A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:3.3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
  • 1:$3.1500
  • 10:$3.0000
  • 25:$2.7700
  • 50:$2.5000
  • 100:$2.2300
  • 250:$1.9500
  • 500:$1.6700
SI4456DY-T1-GE3
DISTI # 15R5026
Vishay IntertechnologiesN CHANNEL MOSFET, 40V, 33A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
  • 1:$1.5200
  • 1000:$1.4300
  • 2000:$1.3500
  • 4000:$1.2200
  • 6000:$1.1700
  • 10000:$1.1300
SI4456DY-T1-GE3
DISTI # 781-SI4456DY-GE3
Vishay IntertechnologiesMOSFET 40V 33A 7.8W 3.8mohm @ 10V
RoHS: Compliant
0
  • 1:$2.8000
  • 10:$2.3300
  • 100:$1.8000
  • 500:$1.5800
  • 1000:$1.3100
  • 2500:$1.2200
  • 5000:$1.1800
Сурет Бөлім № Сипаттама
SI4456DY-T1-E3

Mfr.#: SI4456DY-T1-E3

OMO.#: OMO-SI4456DY-T1-E3

MOSFET 40V 33A 7.8W 3.8mohm @ 10V
SI4456DY-T1-GE3

Mfr.#: SI4456DY-T1-GE3

OMO.#: OMO-SI4456DY-T1-GE3

MOSFET 40V 33A 7.8W 3.8mohm @ 10V
SI4456DY-T1-GE3

Mfr.#: SI4456DY-T1-GE3

OMO.#: OMO-SI4456DY-T1-GE3-VISHAY

RF Bipolar Transistors MOSFET 40V 33A 7.8W 3.8mohm @ 10V
SI4456DY-T1-E3-CUT TAPE

Mfr.#: SI4456DY-T1-E3-CUT TAPE

OMO.#: OMO-SI4456DY-T1-E3-CUT-TAPE-1190

Жаңа және түпнұсқа
SI4456DY-T1-E3

Mfr.#: SI4456DY-T1-E3

OMO.#: OMO-SI4456DY-T1-E3-VISHAY

MOSFET N-CH 40V 33A 8-SOIC
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
3500
Саны енгізіңіз:
SI4456DY-T1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
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