FDL100N50F

FDL100N50F
Mfr. #:
FDL100N50F
Өндіруші:
ON Semiconductor / Fairchild
Сипаттама:
MOSFET UniFET 500V
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
FDL100N50F Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ON Жартылай өткізгіш
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-264-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
500 V
Идентификатор - үздіксіз төгу тогы:
100 A
Rds On - ағызу көзіне қарсылық:
43 mOhms
Vgs - Шлюз көзі кернеуі:
30 V
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
2.5 kW
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
UniFET
Қаптама:
Түтік
Биіктігі:
26.4 mm
Ұзындығы:
20.2 mm
Серия:
FDL100N50F
Транзистор түрі:
1 N-Channel
Түрі:
RFET
Ені:
5.2 mm
Бренд:
ON Semiconductor / Fairchild
Форвард өткізгіштік - Мин:
95 S
Күз уақыты:
105 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
186 ns
Зауыттық буманың саны:
375
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
202 ns
Қосудың әдеттегі кешігу уақыты:
63 ns
Бірлік салмағы:
0.238311 oz
Tags
FDL10, FDL1, FDL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 100 A, 55 mΩ, TO-264
*** Source Electronics
Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) TO-264AA Tube / MOSFET N-CH 500V 100A TO-264
***nell
MOSFET, N-CH, 500V, 100A, TO-264AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V
***roFlash
Power Field-Effect Transistor, 100A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***el Electronic
DC DC Converters 1 (Unlimited) 1 8-SMD Module, 5 Leads Surface Mount Isolated Module ITE (Commercial) ECONOLINE R1SE (E-Series) (1W) -40°C~85°C 0.50Lx0.42W x 0.26 H 12.8mmx10.7mmx6.7mm Module DC-DC 5VIN 1-OUT 5V 0.2A 1W 5-Pin SMD
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
*** Electronics
Trans MOSFET N-CH 400V 50A 3-Pin(3+Tab) TO-264 Rail
***ser
MOSFETs 400V N-Channel QFET
Бөлім № Mfg. Сипаттама Қор Бағасы
FDL100N50F
DISTI # C1S541901537904
ON SemiconductorMOSFETs
RoHS: Compliant
413
  • 375:$8.2200
FDL100N50F
DISTI # FDL100N50F-ND
ON SemiconductorMOSFET N-CH 500V 100A TO-264
RoHS: Compliant
Min Qty: 1
Container: Tube
881In Stock
  • 375:$12.6847
  • 10:$16.3670
  • 1:$18.0000
FDL100N50F
DISTI # FDL100N50F
ON SemiconductorTrans MOSFET N-CH 500V 100A 3-Pin(3+Tab) TO-264AA - Rail/Tube (Alt: FDL100N50F)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 112
  • 1:$8.6900
  • 10:$8.6900
  • 25:$8.6900
  • 50:$8.6900
  • 100:$8.6900
  • 500:$7.9900
  • 1000:$7.8900
FDL100N50F
DISTI # 31Y1379
ON SemiconductorMOSFET, N-CH, 500V, 100A, TO-264AA-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,MSL:- RoHS Compliant: Yes310
  • 1:$15.6200
  • 10:$14.3600
  • 25:$13.7700
  • 50:$12.9500
  • 100:$12.1300
  • 250:$11.5400
  • 500:$10.7900
FDL100N50F
DISTI # 512-FDL100N50F
ON SemiconductorMOSFET UniFET 500V
RoHS: Compliant
836
  • 1:$15.6200
  • 10:$14.3600
  • 25:$13.7700
  • 100:$12.1300
  • 250:$11.5400
  • 500:$10.7900
FDL100N50FFairchild Semiconductor CorporationPower Field-Effect Transistor, 100A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
RoHS: Compliant
2570
  • 1000:$9.7400
  • 500:$10.2500
  • 100:$10.6700
  • 25:$11.1300
  • 1:$11.9800
FDL100N50F
DISTI # 7599128
ON SemiconductorMOSFET N-CH 500V 100A UNIFET TO264AA, EA64
  • 1:£13.1900
  • 13:£12.1300
FDL100N50F
DISTI # 7599128P
ON SemiconductorMOSFET N-CH 500V 100A UNIFET TO264AA, TU446
  • 13:£12.1300
FDL100N50F
DISTI # 2453857
ON SemiconductorMOSFET, N-CH, 500V, 100A, TO-264AA-3
RoHS: Compliant
602
  • 1:£12.2300
  • 5:£11.8300
  • 10:£10.4200
  • 50:£9.8100
  • 100:£9.1900
FDL100N50F
DISTI # 2453857
ON SemiconductorMOSFET, N-CH, 500V, 100A, TO-264AA-3
RoHS: Compliant
310
  • 1:$24.7200
  • 10:$22.7300
  • 25:$21.7900
  • 100:$19.2000
  • 250:$18.2600
  • 500:$17.0800
  • 1000:$15.6700
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Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1984
Саны енгізіңіз:
FDL100N50F ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
11,63 $
11,63 $
10
10,69 $
106,90 $
25
10,25 $
256,25 $
100
9,03 $
903,00 $
250
8,58 $
2 145,00 $
500
8,03 $
4 015,00 $
1000
7,92 $
7 920,00 $
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