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MRF6S21190HSR3

MRF6S21190HSR3
Mfr. #:
MRF6S21190HSR3
Өндіруші:
NXP / Freescale
Сипаттама:
RF MOSFET Transistors HV6 2.1GHZ 54W NI880S
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
MRF6S21190HSR3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MRF6S21190HSR3 DatasheetMRF6S21190HSR3 Datasheet (P4-P6)MRF6S21190HSR3 Datasheet (P7-P9)MRF6S21190HSR3 Datasheet (P10-P11)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
NXP
Өнім санаты:
RF MOSFET транзисторлары
RoHS:
Y
Транзистордың полярлығы:
N-арна
Технология:
Си
Vds - ағызу көзінің бұзылу кернеуі:
68 V
Ең төменгі жұмыс температурасы:
- 65 C
Максималды жұмыс температурасы:
+ 150 C
Орнату стилі:
SMD/SMT
Пакет/қорап:
NI-880S
Қаптама:
Ролик
Конфигурация:
Бойдақ
Биіктігі:
5.08 mm
Ұзындығы:
23.24 mm
Серия:
MRF6S21190H
Түрі:
RF қуаты MOSFET
Ені:
13.8 mm
Бренд:
NXP / Freescale
Арна режимі:
Жақсарту
Өнім түрі:
RF MOSFET транзисторлары
Зауыттық буманың саны:
250
Ішкі санат:
MOSFETs
Vgs - Шлюз көзі кернеуі:
- 0.5 V, 12 V
Бірлік салмағы:
0.238367 oz
Tags
MRF6S21190HS, MRF6S2119, MRF6S211, MRF6S21, MRF6S2, MRF6S, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Driver 0.5A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SOIC N T/R
***ical
Trans RF MOSFET N-CH 68V 3-Pin NI-880S T/R
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S BAND Si N-CHANNEL RF POWER MOSFET
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HV6 2.1GHZ 54W NI880S, CFM2F, RoHS
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GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V, FM2
***et
Transistor RF FET N-CH 68V 1600MHz to 2200MHz 3-Pin TO-270G T/R
***ure Electronics
MRF6S20010 Series 28 V 2170 MHz RF Power Field Effect Transistor - TO-270G-2
***p One Stop Global
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
***i-Key
MOSFET RF N-CH 28V 10W TO2702 GW
***or
RF MOSFET LDMOS 28V TO270-2 GULL
***ment14 APAC
RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G
***i-Key Marketplace
RF S BAND, N-CHANNEL POWER MOSFE
***nell
RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G; Drain Source Voltage Vds: 68V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 2.2GHz; Operating Frequency Max: 1.6GHz; RF Transistor Case: TO-270G; No. of
***W
RF Power Transistor,450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1731
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V, FM2
***ark
RF POWER MOSFET, LATERAL N-CH BROADBAND, 68V, TO-270-2 GULL; Transistor Type:RF FET; Drain Source Voltage Vds:68V; Power Dissipation Pd:10W; Operating Frequency Range:450MHz to 1500MHz; Operating Temperature Range:-10°C to +150°C ;RoHS Compliant: Yes
***nell
TRANSISTOR, RF, 68V, TO-270-2; Drain Source Voltage Vds: 68VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 450MHz; Operating Frequency Max: 1500MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***W
RF Power Transistor,1 to 2000 MHz, 4 W, Typ Gain in dB is 18 @ 1960 MHz, 28 V, LDMOS, SOT1811
***ment14 APAC
RF MOSFET, N CHANNEL, 68V, 466-03; Transistor Type:RF MOSFET; Drain Source Voltage Vds:68V; Operating Frequency Min:1MHz; Operating Frequency Max:2GHz; RF Transistor Case:PLD-1.5; No. of Pins:4; Filter Terminals:Surface Mount
***ark
RF MOSFET, N CHANNEL, 68V, 466-03; Transistor Type:RF FET; Drain Source Voltage, Vds:68V; RF Transistor Case:466; Gain:18dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:1960MHz ;RoHS Compliant: Yes
***nell
TRANSISTOR, RF, 68V, PLD-1.5-4; Drain Source Voltage Vds: 68VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: PLD-1.5; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
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Single N-Channel 60 V 11 mOhm 33 nC OptiMOS™ Power Mosfet - TDSON-8
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Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R / OptiMOS3 Power-Transistor
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
*** Source Electronics
Trans MOSFET N-CH 50V 0.16A 3-Pin SOT-523 T/R / MOSFET N-CH 50V 160MA SOT-523
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DMN55D0UT Series 50 V 160 mA N-Channel Enhancement Mode Mosfet - SOT-523
***nell
MOSFET, N-CH, 50V, SOT-523-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 160mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 3.1ohm; Rds(on) Test Voltage Vgs: 4; Available until stocks are exhausted
***emi
N-Channel MOSFET, Logic Level Enhancement Mode, 50V 0.22A, 1.6Ω
***inecomponents.com
SOT23, 50V NCh Enhancement Mode Field Effect Transistor with
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Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R - Tape and Reel
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Surface Mount Ceramic Multilayer Capacitor 0.1uF 10% X7R 50V 0805 Paper T/R
***ment14 APAC
MOSFET, N-CH, 50V, 0.22A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Source Voltage Vds:50V; On Resistance
***r Electronics
Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***nell
MOSFET, N-CH, 50V, 0.22A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 600mV; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 220 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 2.5 / Gate-Source Voltage V = 12 / Fall Time ns = 35 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 60 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350
Бөлім № Mfg. Сипаттама Қор Бағасы
MRF6S21190HSR3
DISTI # MRF6S21190HSR3-ND		NXP SemiconductorsFET RF 68V 2.17GHZ NI880S
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Limited Supply - Call
    MRF6S21190HSR3
    DISTI # 841-MRF6S21190HSR3    		NXP SemiconductorsRF MOSFET Transistors HV6 2.1GHZ 54W NI880S
    RoHS: Compliant    		0
      Сурет Бөлім № Сипаттама
      MRF6S21140HSR5

      Mfr.#: MRF6S21140HSR5

      OMO.#: OMO-MRF6S21140HSR5

      		 RF MOSFET Transistors HV6 LDMOS 30W NI880HS
      MRF6S21100NBR1

      Mfr.#: MRF6S21100NBR1

      OMO.#: OMO-MRF6S21100NBR1

      		 RF MOSFET Transistors 2170MHZ 23W
      MRF6S21050LSR5

      Mfr.#: MRF6S21050LSR5

      OMO.#: OMO-MRF6S21050LSR5

      		 RF MOSFET Transistors HV6 W-CDMA 11.5W NI400LS
      MRF6S21050LSR5

      Mfr.#: MRF6S21050LSR5

      OMO.#: OMO-MRF6S21050LSR5-NXP-SEMICONDUCTORS

      		 FET RF 68V 2.16GHZ NI-400S
      MRF6S21100HR3

      Mfr.#: MRF6S21100HR3

      OMO.#: OMO-MRF6S21100HR3-NXP-SEMICONDUCTORS

      		 FET RF 68V 2.17GHZ NI-780
      MRF6S21100NBR1

      Mfr.#: MRF6S21100NBR1

      OMO.#: OMO-MRF6S21100NBR1-NXP-SEMICONDUCTORS

      		 FET RF 68V 2.16GHZ TO272-4
      MRF6S21140HR5

      Mfr.#: MRF6S21140HR5

      OMO.#: OMO-MRF6S21140HR5-NXP-SEMICONDUCTORS

      		 FET RF 68V 2.12GHZ NI-880
      MRF6S21100MBR1

      Mfr.#: MRF6S21100MBR1

      OMO.#: OMO-MRF6S21100MBR1-NXP-SEMICONDUCTORS

      		 FET RF 68V 2.16GHZ TO272-4
      MRF6S21060BR1

      Mfr.#: MRF6S21060BR1

      OMO.#: OMO-MRF6S21060BR1-1190

      		 Жаңа және түпнұсқа
      MRF6S21140HR3

      Mfr.#: MRF6S21140HR3

      OMO.#: OMO-MRF6S21140HR3-NXP-SEMICONDUCTORS

      		 FET RF 68V 2.12GHZ NI-880
      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      5000
      Саны енгізіңіз:
      MRF6S21190HSR3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
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