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IPG20N06S2L50AATMA1

IPG20N06S2L50AATMA1
Mfr. #:
IPG20N06S2L50AATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 55V 20A TDSON-8
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPG20N06S2L50AATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPG20N06S2L50AATMA1 DatasheetIPG20N06S2L50AATMA1 Datasheet (P4-P6)IPG20N06S2L50AATMA1 Datasheet (P7-P9)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TDSON-8
Арналар саны:
2 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
55 V
Идентификатор - үздіксіз төгу тогы:
20 A
Rds On - ағызу көзіне қарсылық:
50 mOhms
Vgs th - Gate-Source шекті кернеуі:
1.6 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
13 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
51 W
Конфигурация:
Қосарлы
Арна режимі:
Жақсарту
Біліктілік:
AEC-Q101
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
1.27 mm
Ұзындығы:
5.9 mm
Транзистор түрі:
2 N-Channel
Ені:
5.15 mm
Бренд:
Infineon Technologies
Күз уақыты:
10 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
3 ns
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
15 ns
Қосудың әдеттегі кешігу уақыты:
2 ns
Бөлім # Бүркеншік аттар:
IPG20N06S2L-50A SP001023842
Tags
IPG20N06S2, IPG20N06, IPG20N0, IPG20, IPG2, IPG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
55V, Dual N-Ch, 50 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™, PG-TDSON-8, RoHS
***ical
Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
***i-Key Marketplace
IPG20N06 - 55V-60V N-CHANNEL AUT
***ineon
Summary of Features: Dual N-channel Logic Level - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested; Feasible for automatic optical inspection (AOI) | Benefits: Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.; Bond wire is 200um for up to 20A current; Larger source lead frame connection for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes | Target Applications: Direct Fuel Injection; ABS Valves; Solenoid control; Load Switches; LED and Body lighting
***(Formerly Allied Electronics)
IRLR3105TRPBF N-channel MOSFET Transistor, 25 A, 55 V, 3-Pin DPAK
***ure Electronics
Single N-Channel 55 V 37 mOhm 13.3 nC HEXFET® Power Mosfet - DPAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ark
N Channel Mosfet, 55V, 25A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:25A; On Resistance Rds(On):0.037Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 25 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 37 / Gate-Source Voltage V = 16 / Fall Time ns = 37 / Rise Time ns = 57 / Turn-OFF Delay Time ns = 25 / Turn-ON Delay Time ns = 8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 57
***ernational Rectifier
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package
*** Stop Electro
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N-CH, 55V, 25A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:57W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon SCT
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on resistance per silicon area, DPAK-3, RoHS
***ineon
Benefits: Advanced Planar Technology; Logic-Level Gate Drive; Dynamic dv/dt Rating; Low On-Resistance; 175C Operating Temperature; Fast Switching; Fully Avalanche Rated; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***emi
N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ
***ure Electronics
N-Channel 55 V 0.036 Ohm UltraFET Power Mosfet - TO-252AA
***r Electronics
Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321.
***emi
N-Channel UltraFET® Power MOSFET 55V, 20A, 36mΩ
***Yang
Trans MOSFET N-CH 55V 20A 3-Pin(2+Tab) DPAK T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***inecomponents.com
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
***Yang
TRANS MOSFET N-CH 55V 20A 3PIN TO-252AA - Bulk
***S
French Electronic Distributor since 1988
***el Electronic
IC AMP AB STEREO 80MW VCSP50L2
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes RoHS Compliant: Yes
Бөлім № Mfg. Сипаттама Қор Бағасы
IPG20N06S2L50AATMA1
DISTI # IPG20N06S2L50AATMA1-ND		Infineon Technologies AGMOSFET 2N-CH 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.6169
IPG20N06S2L50AATMA1
DISTI # IPG20N06S2L50AATMA1		Infineon Technologies AGTrans MOSFET N-CH 55V 20A 8-Pin TDSON T/R - Tape and Reel (Alt: IPG20N06S2L50AATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.6069
  • 10000:$0.5849
  • 20000:$0.5639
  • 30000:$0.5449
  • 50000:$0.5349
IPG20N06S2L50AATMA1
DISTI # SP001023842		Infineon Technologies AGTrans MOSFET N-CH 55V 20A 8-Pin TDSON T/R (Alt: SP001023842)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.9489
  • 10000:€0.7959
  • 20000:€0.6649
  • 30000:€0.5789
  • 50000:€0.5429
IPG20N06S2L50AATMA1
DISTI # 726-IPG20N06S2L50AAT		Infineon Technologies AGMOSFET N-Ch 55V 20A TDSON-8
RoHS: Compliant		0
  • 1:$1.3800
  • 10:$1.1800
  • 100:$0.9070
  • 500:$0.8020
  • 1000:$0.6330
  • 5000:$0.5610
  • 10000:$0.5400
Сурет Бөлім № Сипаттама
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 MOSFET 2N-CH 8TDSON
IPG20N06S4L-11A

Mfr.#: IPG20N06S4L-11A

OMO.#: OMO-IPG20N06S4L-11A-1190

 Жаңа және түпнұсқа
IPG20N06S4L-26A

Mfr.#: IPG20N06S4L-26A

OMO.#: OMO-IPG20N06S4L-26A-1190

 MOSFET N-Ch 55V 20A TDSON-8
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Mfr.#: IPG20N06S4L-11

OMO.#: OMO-IPG20N06S4L-11-317

 RF Bipolar Transistors MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
IPG20N06S4L26AATMA1

Mfr.#: IPG20N06S4L26AATMA1

OMO.#: OMO-IPG20N06S4L26AATMA1-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET N-Ch 55V 20A TDSON-8
Қол жетімділік
Қор:
250
Тапсырыс бойынша:
2233
Саны енгізіңіз:
IPG20N06S2L50AATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,38 $
1,38 $
10
1,18 $
11,80 $
100
0,91 $
90,70 $
500
0,80 $
401,00 $
1000
0,63 $
633,00 $
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