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IPD60R380C6ATMA1

IPD60R380C6ATMA1
Mfr. #:
IPD60R380C6ATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 600V 10.6A DPAK-2
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPD60R380C6ATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TO-252-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
600 V
Идентификатор - үздіксіз төгу тогы:
10.6 A
Rds On - ағызу көзіне қарсылық:
340 mOhms
Vgs th - Gate-Source шекті кернеуі:
2.5 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
32 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
83 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
CoolMOS
Қаптама:
Ролик
Биіктігі:
2.3 mm
Ұзындығы:
6.5 mm
Серия:
CoolMOS C6
Транзистор түрі:
1 N-Channel
Ені:
6.22 mm
Бренд:
Infineon Technologies
Күз уақыты:
9 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
10 ns
Зауыттық буманың саны:
2500
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
110 ns
Қосудың әдеттегі кешігу уақыты:
15 ns
Бөлім # Бүркеншік аттар:
IPD60R380C6 SP001117716
Бірлік салмағы:
0.139332 oz
Tags
IPD60R380C, IPD60R380, IPD60R38, IPD60R3, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 380 mOhm 32 nC CoolMOS™ Power Mosfet - TO-252-3
*** Stop Electro
Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ment14 APAC
MOSFET,N CH,600V,10.6A,TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.6A; Power Dissipation Pd:83W; Voltage Vgs Max:30V
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ical
Trans MOSFET N-CH 600V 9.1A 3-Pin(2+Tab) DPAK T/R
***i-Key Marketplace
COOLMOS N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***ical
Trans MOSFET N-CH 700V 10.6A Automotive 3-Pin(2+Tab) DPAK T/R
***nell
MOSFET, N-CH, 650V, 10.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.6A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS E6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
*** Stop Electro
Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
*** Source Electronics
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R / CoolMOS Power Transistor
*** Stop Electro
Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:650V; On Resistance Rds(on):385mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9A; Package / Case:TO-252; Power Dissipation Pd:83W; Pulse Current Idm:27A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package
***ark
MOSFET, N-CH, 600V, 11A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 600V, 11A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***icroelectronics
N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a DPAK package
***r Electronics
Power Field-Effect Transistor, 13A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***enic
500V 13A 240m´Î@10V6.5A 110W 3V@250uA 1.35pF@100V N Channel 710pF@100v 19.5nC@0~10V -55¡Í~+150¡Í@(Tj) TO-252-3 MOSFETs ROHS
***icroelectronics
N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
***ark
Mosfet, N-Ch, 650V, 11A, To-252 Rohs Compliant: Yes
***el Electronic
Cap Ceramic 0.047uF 500V X7R 20% SMD 1812 125C Embossed T/R
***icroelectronics SCT
Power MOSFETs, 650V, 11A, DPAK, Tape and Reel
***enic
650V 11A 320m´Î@10V5.5A 110W 3V@250uA 1.1pF@100V N Channel 718pF@100V 19.5nC@10V -55¡Í~+150¡Í@(Tj) DPAK MOSFETs ROHS
Бөлім № Mfg. Сипаттама Қор Бағасы
IPD60R380C6ATMA1
DISTI # V72:2272_06383823		Infineon Technologies AGTrans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		80
  • 75000:$0.7690
  • 30000:$0.8060
  • 15000:$0.8430
  • 6000:$0.8801
  • 3000:$0.9171
  • 1000:$0.9541
  • 500:$0.9911
  • 250:$1.0703
  • 100:$1.0814
  • 50:$1.2503
  • 25:$1.3892
  • 10:$1.4112
  • 1:$1.8219
IPD60R380C6ATMA1
DISTI # IPD60R380C6ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 600V 10.6A TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1844In Stock
  • 1000:$0.9328
  • 500:$1.1258
  • 100:$1.3703
  • 10:$1.7050
  • 1:$1.9000
IPD60R380C6ATMA1
DISTI # IPD60R380C6ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 600V 10.6A TO252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1844In Stock
  • 1000:$0.9328
  • 500:$1.1258
  • 100:$1.3703
  • 10:$1.7050
  • 1:$1.9000
IPD60R380C6ATMA1
DISTI # IPD60R380C6ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 10.6A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 12500:$0.7949
  • 5000:$0.8119
  • 2500:$0.8432
IPD60R380C6ATMA1
DISTI # 32874244		Infineon Technologies AGTrans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		80
  • 8:$0.8634
IPD60R380C6ATMA1
DISTI # IPD60R380C6ATMA1		Infineon Technologies AGTrans MOSFET N-CH 600V 10.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R380C6ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.7209
  • 15000:$0.7339
  • 10000:$0.7599
  • 5000:$0.7879
  • 2500:$0.8179
IPD60R380C6ATMA1
DISTI # SP001117716		Infineon Technologies AGTrans MOSFET N-CH 600V 10.6A 3-Pin TO-252 T/R (Alt: SP001117716)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.7389
  • 15000:€0.7889
  • 10000:€0.8669
  • 5000:€0.9699
  • 2500:€1.2439
IPD60R380C6ATMA1
DISTI # 30T1835		Infineon Technologies AGMOSFET, N CHANNEL, 650V, 10.6A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.6A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.34ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1000:$0.8320
  • 500:$1.0000
  • 100:$1.1400
  • 10:$1.4300
  • 1:$1.6900
IPD60R380C6ATMA1
DISTI # 726-IPD60R380C6ATMA1		Infineon Technologies AGMOSFET N-Ch 600V 10.6A DPAK-2
RoHS: Compliant		5525
  • 1:$1.6700
  • 10:$1.4200
  • 100:$1.1300
  • 500:$0.9940
  • 1000:$0.8240
IPD60R380C6
DISTI # 726-IPD60R380C6		Infineon Technologies AGMOSFET N-Ch 600V 10.6A DPAK-2
RoHS: Compliant		15
  • 1:$1.6700
  • 10:$1.4200
  • 100:$1.1300
  • 500:$0.9940
  • 1000:$0.8240
IPD60R380C6ATMA1
DISTI # 7533011P		Infineon Technologies AGMOSFET N-CH 600V 10.6A COOLMOS C6 TO252, RL6156
  • 1250:£0.5950
  • 626:£0.6850
  • 126:£0.7900
  • 26:£0.9450
IPD60R380C6ATMA1
DISTI # 1860805		Infineon Technologies AGMOSFET,N CH,600V,10.6A,TO252
RoHS: Compliant		5009
  • 2500:$1.1900
  • 1000:$1.2100
  • 500:$1.4500
  • 100:$1.6500
  • 10:$2.0700
  • 1:$2.5800
IPD60R380C6ATMA1
DISTI # 1860805		Infineon Technologies AGMOSFET,N CH,600V,10.6A,TO2525024
  • 500:£0.7420
  • 250:£0.7920
  • 100:£0.8400
  • 25:£1.0500
  • 5:£1.1500
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 Жаңа және түпнұсқа
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1989
Саны енгізіңіз:
IPD60R380C6ATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,67 $
1,67 $
10
1,42 $
14,20 $
100
1,13 $
113,00 $
500
0,99 $
497,00 $
1000
0,82 $
824,00 $
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