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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| SI6435DQ-T1 DISTI # 781-SI6435DQ | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI6423DQ-T1-GE3 RoHS: Not compliant | 0 | |
| SI6435DQ-T1-E3 DISTI # 781-SI6435DQ-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI6423DQ-T1-GE3 RoHS: Compliant | 0 | |
| SI6435DQ-T1 | Vishay Siliconix | 4500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 6000 |
|
| SI6435DQ-T1 | Vishay Siliconix | 4500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 3000 |
|
| SI6435DQ-T1 | Vishay Semiconductors | 4500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 512 |
|
| SI6435DQ-T1 | Vishay Siliconix | 4500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 4800 |
|
| SI6435DQ-T1 | Vishay Siliconix | 6000 |
| |
| SI6435DQT1 | Vishay Siliconix | Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 41900 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: SI6433BDQ-T1-E3 OMO.#: OMO-SI6433BDQ-T1-E3-VISHAY |
IGBT Transistors MOSFET 12V 4.8A 1.5W 40mohm @ 4.5V |
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Mfr.#: SI6433BDQ-T1 OMO.#: OMO-SI6433BDQ-T1-1190 |
Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: SI6433DQ-T1-GE3 OMO.#: OMO-SI6433DQ-T1-GE3-1190 |
Жаңа және түпнұсқа |
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Mfr.#: SI6433DQ-TBB OMO.#: OMO-SI6433DQ-TBB-1190 |
Жаңа және түпнұсқа |
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Mfr.#: SI6435 OMO.#: OMO-SI6435-1190 |
Жаңа және түпнұсқа |
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Mfr.#: SI6435A OMO.#: OMO-SI6435A-1190 |
Жаңа және түпнұсқа |
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Mfr.#: SI6435ADQ OMO.#: OMO-SI6435ADQ-1190 |
Жаңа және түпнұсқа |
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Mfr.#: SI6435ADQ-T1-E3 OMO.#: OMO-SI6435ADQ-T1-E3-VISHAY |
MOSFET P-CH 30V 4.7A 8-TSSOP |
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Mfr.#: SI6435DQ 435 OMO.#: OMO-SI6435DQ-435-1190 |
Жаңа және түпнұсқа |
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Mfr.#: SI6435DQ-T1 OMO.#: OMO-SI6435DQ-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI6423DQ-T1-GE3 |