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IPD30N10S3L34ATMA1

IPD30N10S3L34ATMA1
Mfr. #:
IPD30N10S3L34ATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPD30N10S3L34ATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD30N10S3L34ATMA1 DatasheetIPD30N10S3L34ATMA1 Datasheet (P4-P6)IPD30N10S3L34ATMA1 Datasheet (P7-P9)
ECAD Model:
Көбірек ақпарат:
IPD30N10S3L34ATMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PG-TO-252-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
100 V
Идентификатор - үздіксіз төгу тогы:
30 A
Rds On - ағызу көзіне қарсылық:
31 mOhms
Vgs th - Gate-Source шекті кернеуі:
1.2 V
Vgs - Шлюз көзі кернеуі:
10 V
Qg - қақпа заряды:
24 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
57 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Біліктілік:
AEC-Q101
Қаптама:
Ролик
Биіктігі:
2.3 mm
Ұзындығы:
6.5 mm
Серия:
XPD30N10
Транзистор түрі:
1 N-Channel
Ені:
6.22 mm
Бренд:
Infineon Technologies
Күз уақыты:
3 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
4 ns
Зауыттық буманың саны:
2500
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
18 ns
Қосудың әдеттегі кешігу уақыты:
6 ns
Бөлім # Бүркеншік аттар:
IPD30N10S3L-34 IPD3N1S3L34XT SP000261248
Бірлік салмағы:
0.139332 oz
Tags
IPD30N10, IPD30N1, IPD30N, IPD30, IPD3, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 2500, N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK Infineon IPD30N10S3L34ATMA1
***ark
MOSFET Transistor, N Channel, 30 A, 100 V, 0.0258 ohm, 10 V, 1.7 V
***ure Electronics
Single N-Channel 100 V 31 mOhm 31 nC OptiMOS™ Power Mosfet - TO-252-3
***p One Stop Japan
Trans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) DPAK T/R
***ical
Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-252
***et Europe
Trans MOSFET N-CH 100V 30A 3-Pin TO-252 T/R
***i-Key
MOSFET N-CH 100V 30A TO252-3
***ronik
N-CH 100V 30A 31mOhm TO252-3
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 100V, 30A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0258ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:57W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
***nell
MOSFET, CANALE N, 100V, 30A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0258ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:57W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Бөлім № Mfg. Сипаттама Қор Бағасы
IPD30N10S3L34ATMA1
DISTI # V72:2272_06390917		Infineon Technologies AGTrans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 75000:$0.3688
  • 30000:$0.3726
  • 15000:$0.3766
  • 6000:$0.3805
  • 3000:$0.3844
  • 1000:$0.3882
  • 500:$0.4915
  • 250:$0.5622
  • 100:$0.5734
  • 50:$0.6639
  • 25:$0.7376
  • 10:$0.8189
  • 1:$0.9480
IPD30N10S3L34ATMA1
DISTI # IPD30N10S3L34ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		28373In Stock
  • 1000:$0.4344
  • 500:$0.5503
  • 100:$0.6661
  • 10:$0.8540
  • 1:$0.9600
IPD30N10S3L34ATMA1
DISTI # IPD30N10S3L34ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		28373In Stock
  • 1000:$0.4344
  • 500:$0.5503
  • 100:$0.6661
  • 10:$0.8540
  • 1:$0.9600
IPD30N10S3L34ATMA1
DISTI # IPD30N10S3L34ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 30A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		27500In Stock
  • 25000:$0.3562
  • 12500:$0.3599
  • 5000:$0.3740
  • 2500:$0.3937
IPD30N10S3L34ATMA1
DISTI # 33119879		Infineon Technologies AGTrans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 15000:$0.3766
  • 6000:$0.3805
  • 3000:$0.3844
  • 1000:$0.3882
  • 500:$0.4915
  • 250:$0.5622
  • 100:$0.5734
  • 50:$0.6639
  • 25:$0.7376
  • 17:$0.8189
IPD30N10S3L34ATMA1
DISTI # SP000261248		Infineon Technologies AGTrans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-252 (Alt: SP000261248)
RoHS: Compliant
Min Qty: 2500		Europe - 26500
  • 25000:€0.3879
  • 15000:€0.4179
  • 10000:€0.4649
  • 5000:€0.5219
  • 2500:€0.6159
IPD30N10S3L34ATMA1
DISTI # IPD30N10S3L34ATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD30N10S3L34ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.3399
  • 15000:$0.3459
  • 10000:$0.3579
  • 5000:$0.3709
  • 2500:$0.3849
IPD30N10S3L34ATMA1
DISTI # 79X1436		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TO-252- 3,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0258ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes8676
  • 1000:$0.4060
  • 500:$0.5140
  • 250:$0.5480
  • 100:$0.5820
  • 50:$0.6400
  • 25:$0.6990
  • 10:$0.7580
  • 1:$0.8790
IPD30N10S3L-34
DISTI # 726-IPD30N10S3L34		Infineon Technologies AGMOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
RoHS: Compliant		52091
  • 1:$0.8700
  • 10:$0.7500
  • 100:$0.5760
  • 500:$0.5090
  • 1000:$0.4020
  • 2500:$0.3570
  • 10000:$0.3430
IPD30N10S3L34ATMA1
DISTI # 726-IPD30N10S3L34ATM		Infineon Technologies AGMOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
RoHS: Compliant		23984
  • 1:$0.8700
  • 10:$0.7500
  • 100:$0.5760
  • 500:$0.5090
  • 1000:$0.4020
  • 2500:$0.3570
  • 10000:$0.3430
IPD30N10S3L34ATMA1
DISTI # 7533018		Infineon Technologies AGMOSFET N-CH 100V 30A OPTIMOS-T TO252, PK890
  • 1250:£0.2870
  • 630:£0.3190
  • 130:£0.3640
  • 30:£0.4640
  • 10:£0.6060
IPD30N10S3L34ATMA1
DISTI # 7533018P		Infineon Technologies AGMOSFET N-CH 100V 30A OPTIMOS-T TO252, RL10090
  • 1250:£0.2870
  • 630:£0.3190
  • 130:£0.3640
  • 30:£0.4640
IPD30N10S3L34ATMA1
DISTI # 2432729		Infineon Technologies AGMOSFET, N CH, 100V, 30A, TO-252-37787
  • 500:£0.3700
  • 250:£0.3930
  • 100:£0.4170
  • 25:£0.5470
  • 5:£0.6410
IPD30N10S3L34ATMA1
DISTI # 2432729RL		Infineon Technologies AGMOSFET, N CH, 100V, 30A, TO-252-3
RoHS: Compliant		0
  • 2500:$0.5490
  • 1000:$0.6190
  • 500:$0.7830
  • 100:$0.8860
  • 10:$1.1600
  • 1:$1.3400
IPD30N10S3L34ATMA1
DISTI # 2432729		Infineon Technologies AGMOSFET, N CH, 100V, 30A, TO-252-3
RoHS: Compliant		8282
  • 2500:$0.5490
  • 1000:$0.6190
  • 500:$0.7830
  • 100:$0.8860
  • 10:$1.1600
  • 1:$1.3400
IPD30N10S3L34ATMA1
DISTI # XSKDRABS0030196		Infineon Technologies AG 
RoHS: Compliant		7500 in Stock0 on Order
  • 7500:$0.4745
  • 2500:$0.5084
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SBC847CLT1G

Mfr.#: SBC847CLT1G

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06035C104K4T2A

Mfr.#: 06035C104K4T2A

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 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50volts 0.1uF 10% X7R
CGA6M3X7S2A475K200AB

Mfr.#: CGA6M3X7S2A475K200AB

OMO.#: OMO-CGA6M3X7S2A475K200AB-TDK

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 4.7uF 100volts X7S +/-10%
AC0805FR-0715KL

Mfr.#: AC0805FR-0715KL

OMO.#: OMO-AC0805FR-0715KL-YAGEO

 Thick Film Resistors - SMD 1/8W 15K ohm 1%
Қол жетімділік
Қор:
26
Тапсырыс бойынша:
2009
Саны енгізіңіз:
IPD30N10S3L34ATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,87 $
0,87 $
10
0,75 $
7,50 $
100
0,58 $
57,60 $
500
0,51 $
254,50 $
1000
0,40 $
402,00 $
-ден бастаңыз
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