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SiSA26DN-T1-GE3

SiSA26DN-T1-GE3
Mfr. #:
SiSA26DN-T1-GE3
Өндіруші:
Vishay / Siliconix
Сипаттама:
MOSFET 25V Vds 16V Vgs PowerPAK 1212-8
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SiSA26DN-T1-GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SiSA26DN-T1-GE3 DatasheetSiSA26DN-T1-GE3 Datasheet (P4-P6)SiSA26DN-T1-GE3 Datasheet (P7)
ECAD Model:
Көбірек ақпарат:
SiSA26DN-T1-GE3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Вишай
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PowerPAK-1212-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
25 V
Идентификатор - үздіксіз төгу тогы:
60 A
Rds On - ағызу көзіне қарсылық:
2.15 mOhms
Vgs th - Gate-Source шекті кернеуі:
1 V
Vgs - Шлюз көзі кернеуі:
16 V, - 12 V
Qg - қақпа заряды:
44 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
39 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Ролик
Серия:
SiSA26DN
Транзистор түрі:
1 N-Channel
Бренд:
Вишай / Силиконикс
Форвард өткізгіштік - Мин:
88 S
Күз уақыты:
8 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
23 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
16 ns
Қосудың әдеттегі кешігу уақыты:
9 ns
Tags
SISA, SIS
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TrenchFET Gen IV Power MOSFET N-Channel Single 25V VDS +16V -12V VGS 60A ID 8-Pin PowerPAK 1212 T/R
***ical
Trans MOSFET N-CH 25V 29.1A 8-Pin PowerPAK 1212 EP T/R
***i-Key
MOSFET N-CH 25V 60A POWERPAK1212
***ark
Mosfet, N-Ch, 25V, 60A, 150Deg C, 39W; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.00215Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 25V, 60A, 150DEG C, 39W; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00215ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:39W; Transistor Case Style:PowerPAK 1212; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANAL N, 25V, 60A, 150°C, 39W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:25V; Resistenza di Attivazione Rds(on):0.00215ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.5V; Dissipazione di Potenza Pd:39W; Modello Case Transistor:PowerPAK 1212; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Бөлім № Mfg. Сипаттама Қор Бағасы
SISA26DN-T1-GE3
DISTI # V72:2272_21388883		Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET6000
  • 75000:$0.2871
  • 30000:$0.2901
  • 15000:$0.2932
  • 6000:$0.2963
  • 3000:$0.2994
  • 1000:$0.3261
  • 500:$0.4122
  • 250:$0.4599
  • 100:$0.5110
  • 50:$0.5923
  • 25:$0.6581
  • 10:$0.7377
  • 1:$0.9122
SISA26DN-T1-GE3
DISTI # V99:2348_21388883		Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET0
  • 6000000:$0.3107
  • 3000000:$0.3109
  • 600000:$0.3155
  • 60000:$0.3218
  • 6000:$0.3228
SISA26DN-T1-GE3
DISTI # SISA26DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 25V 60A POWERPAK1212
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5631In Stock
  • 1000:$0.3668
  • 500:$0.4586
  • 100:$0.5801
  • 10:$0.7570
  • 1:$0.8600
SISA26DN-T1-GE3
DISTI # SISA26DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 25V 60A POWERPAK1212
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5631In Stock
  • 1000:$0.3668
  • 500:$0.4586
  • 100:$0.5801
  • 10:$0.7570
  • 1:$0.8600
SISA26DN-T1-GE3
DISTI # SISA26DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 25V 60A POWERPAK1212
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.2820
  • 15000:$0.2894
  • 6000:$0.3005
  • 3000:$0.3228
SISA26DN-T1-GE3
DISTI # 31355217		Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET6000
  • 15000:$0.2932
  • 6000:$0.2963
  • 3000:$0.2994
  • 1000:$0.3261
  • 500:$0.4122
  • 250:$0.4599
  • 100:$0.5110
  • 50:$0.5923
  • 25:$0.6581
  • 22:$0.7377
SISA26DN-T1-GE3
DISTI # SISA26DN-T1-GE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 25V VDS +16V -12V VGS 60A ID8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA26DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.2709
  • 30000:$0.2789
  • 18000:$0.2869
  • 12000:$0.2989
  • 6000:$0.3079
SISA26DN-T1-GE3
DISTI # 81AC2791		Vishay IntertechnologiesMOSFET, N-CH, 25V, 60A, 150DEG C, 39W,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.00215ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes6040
  • 1000:$0.3430
  • 500:$0.4280
  • 250:$0.4740
  • 100:$0.5190
  • 50:$0.5740
  • 25:$0.6290
  • 10:$0.6840
  • 1:$0.8480
SISA26DN-T1-GE3
DISTI # 59AC7446		Vishay IntertechnologiesN-CHANNEL 25-V (D-S) MOSFET0
  • 50000:$0.2740
  • 30000:$0.2870
  • 20000:$0.3080
  • 10000:$0.3290
  • 5000:$0.3570
  • 1:$0.3650
SiSA26DN-T1-GE3
DISTI # 78-SISA26DN-T1-GE3		Vishay IntertechnologiesMOSFET 25V Vds 16V Vgs PowerPAK 1212-8
RoHS: Compliant		5895
  • 1:$0.8400
  • 10:$0.6770
  • 100:$0.5140
  • 500:$0.4240
  • 1000:$0.3400
  • 3000:$0.3080
SISA26DN-T1-GE3
DISTI # 2932955		Vishay IntertechnologiesMOSFET, N-CH, 25V, 60A, 150DEG C, 39W6045
  • 500:£0.3070
  • 250:£0.3400
  • 100:£0.3720
  • 10:£0.5390
  • 1:£0.6960
SISA26DN-T1-GE3
DISTI # 2932955		Vishay IntertechnologiesMOSFET, N-CH, 25V, 60A, 150DEG C, 39W
RoHS: Compliant		6040
  • 1000:$0.4720
  • 500:$0.4990
  • 250:$0.5870
  • 100:$0.7140
  • 10:$0.9090
  • 1:$1.1000
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Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1988
Саны енгізіңіз:
SiSA26DN-T1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,84 $
0,84 $
10
0,68 $
6,77 $
100
0,51 $
51,40 $
500
0,42 $
212,00 $
1000
0,34 $
340,00 $
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