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Quality GuaranteesWe provide 90-360 days warranty.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| IPP06CN10LGXKSA1 DISTI # IPP06CN10LGXKSA1-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A TO220-3 RoHS: Not compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
| IPP06CN10L G DISTI # IPP06CN10LG | Infineon Technologies AG | Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220 - Bulk (Alt: IPP06CN10LG) RoHS: Not Compliant Min Qty: 250 Container: Bulk | Americas - 0 |
|
| IPP06CN10L G DISTI # 726-IPP06CN10LG | Infineon Technologies AG | MOSFET N-Ch 100V 100A TO220-3 RoHS: Compliant | 34 |
|
| IPP06CN10LGHKSA1 DISTI # 726-IPP06CN10LGHKSA1 | Infineon Technologies AG | MOSFET RoHS: Compliant | 0 | |
| IPP06CN10LG | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 100V, 0.0062ohm, N-Channel, MOSFET RoHS: Compliant | 490 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: IPP06CN10LGHKSA1 OMO.#: OMO-IPP06CN10LGHKSA1-1190 |
MOSFET |
|
|
Mfr.#: IPP06CN10 OMO.#: OMO-IPP06CN10-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPP06CN10LG OMO.#: OMO-IPP06CN10LG-1190 |
Power Field-Effect Transistor, 100A I(D), 100V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
|
Mfr.#: IPP06CN10LG,06N10L, OMO.#: OMO-IPP06CN10LG-06N10L--1190 |
Жаңа және түпнұсқа |
|
Mfr.#: IPP06CN10LGXKSA1 |
MOSFET N-CH 100V 100A TO220-3 |
|
|
Mfr.#: IPP06CN10N OMO.#: OMO-IPP06CN10N-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPP06CN10N G |
MOSFET N-CH 100V 100A TO-220 |
|
|
Mfr.#: IPP06CN10NG,06CN10N OMO.#: OMO-IPP06CN10NG-06CN10N-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPP06CN10NG,06CN10N,IPP0 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPP06CN10L G OMO.#: OMO-IPP06CN10L-G-126 |
IGBT Transistors MOSFET N-Ch 100V 100A TO220-3 |