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MJE5851G

MJE5851G
Mfr. #:
MJE5851G
Өндіруші:
ON Semiconductor
Сипаттама:
Bipolar Transistors - BJT 8A 350V 80W PNP
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
MJE5851G Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MJE5851G DatasheetMJE5851G Datasheet (P4-P6)MJE5851G Datasheet (P7-P8)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ON Жартылай өткізгіш
Өнім санаты:
Биполярлы транзисторлар - BJT
RoHS:
Y
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-220-3
Транзистордың полярлығы:
PNP
Конфигурация:
Бойдақ
Коллектор-эмиттер кернеуі VCEO Max:
350 V
Коллектор – базалық кернеу VCBO:
400 V
Эмитент – базалық кернеу VEBO:
6 V
Коллектор-эмиттер қанығу кернеуі:
2 V
Тұрақты ток коллекторының максималды тогы:
8 A
Ең төменгі жұмыс температурасы:
- 65 C
Максималды жұмыс температурасы:
+ 150 C
Серия:
MJE5851
Биіктігі:
15.75 mm
Ұзындығы:
10.53 mm
Қаптама:
Түтік
Ені:
4.83 mm
Бренд:
ON Жартылай өткізгіш
Үздіксіз коллекторлық ток:
8 A
Тұрақты ток коллекторы/негізгі күшеюі hfe Мин:
15
Pd - қуаттың шығыны:
80 W
Өнім түрі:
BJTs - Биполярлы транзисторлар
Зауыттық буманың саны:
50
Ішкі санат:
Транзисторлар
Бірлік салмағы:
0.211644 oz
Tags
MJE5851, MJE58, MJE5, MJE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***enic
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***Yang
Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***emi
8.0 A, 350 V PNP Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***ment14 APAC
BIPOLAR TRANSISTOR, PNP, -350V, TO-220;
***th Star Micro
The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:
***emi
8.0 A, 300 V PNP Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***nell
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***el Electronic
RES SMD 7.68K OHM 1% 1/2W 1206
***roFlash
ON Semi MJE5852G PNP High Voltage Bipolar Transistor; 8 A; 400 V; 3-Pin TO-220AB
***ical
Trans GP BJT PNP 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
MJE Series 400 V 8 A SWITCHMODE™ Series PNP Silicon Power Transistor - TO-220AB
***emi
8.0 A, 400 V PNP Bipolar Power Transistor
***SIT Distribution GmbH
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***enic
400V 80W 8A 5@5A5V 5V@8A3A PNP -65¡Í~+150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
***nell
TRANSISTOR, PNP, TO-220AB; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Current: 8A; DC Current Gain hFE: 15hFE; Transistor Case Style:
***ark
RF TRANSISTOR, PNP, -400V, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage Max:400V; Continuous Collector Current:8A; Power Dissipation:80W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
***th Star Micro
The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:
***enic
300V 80W 8A PNP TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
***ical
Trans GP BJT PNP 300V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
MJE Series 300 V 8 A SWITCHMODE™ Series PNP Silicon Power Transistor - TO-220AB
***emi
8.0 A, 300 V PNP Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***(Formerly Allied Electronics)
Transistor, Bipolar, Si, PNP, Power, VCEO 300VDC, IC 8A, PD 80W, TO-220AB, hFE 5 | ON Semiconductor MJE5850G
***nell
TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Cu; Available until stocks are exhausted Alternative available
***th Star Micro
The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:
Бөлім № Mfg. Сипаттама Қор Бағасы
MJE5851G
DISTI # V99:2348_07278929		ON SemiconductorTrans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		390
  • 5000:$1.2130
  • 2500:$1.2200
  • 1000:$1.2580
  • 500:$1.3110
  • 100:$1.5049
  • 10:$1.9280
  • 1:$2.0630
MJE5851G
DISTI # MJE5851GOS-ND		ON SemiconductorTRANS PNP 350V 8A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		350In Stock
  • 1000:$1.4992
  • 500:$1.8094
  • 100:$2.2023
  • 50:$2.5848
  • 1:$3.0500
MJE5851G
DISTI # 26621158		ON SemiconductorTrans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		4000
  • 400:$1.2496
MJE5851G
DISTI # 27149027		ON SemiconductorTrans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		390
  • 100:$1.5200
  • 10:$1.9250
  • 5:$2.0200
MJE5851G
DISTI # MJE5851G		ON SemiconductorTrans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: MJE5851G)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 1072
  • 1:$1.7900
  • 10:$1.6900
  • 25:$1.6900
  • 50:$1.6900
  • 100:$1.2900
  • 500:$1.2900
  • 1000:$1.2900
MJE5851G
DISTI # 42K1299		ON SemiconductorBIPOLAR TRANSISTOR, PNP, -350V, TO-220,Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:350V,Transition Frequency ft:-,Power Dissipation Pd:80W,DC Collector Current:-8A,DC Current Gain hFE:15hFE,No. of Pins:3Pins RoHS Compliant: Yes0
  • 1:$3.1600
  • 10:$2.5700
  • 25:$2.0800
  • 100:$2.0200
  • 250:$1.8400
  • 500:$1.5300
  • 1000:$1.4300
  • 2500:$1.3800
MJE5851G
DISTI # 863-MJE5851G		ON SemiconductorBipolar Transistors - BJT 8A 350V 80W PNP
RoHS: Compliant		402
  • 1:$2.9000
  • 10:$2.4700
  • 100:$1.9700
  • 500:$1.7300
  • 1000:$1.4300
MJE5852G
DISTI # 863-MJE5852G		ON SemiconductorBipolar Transistors - BJT 8A 400V 80W PNP
RoHS: Compliant		380
  • 1:$2.7200
  • 10:$2.3100
  • 100:$1.8500
  • 500:$1.6200
  • 1000:$1.3400
MJE5851
DISTI # 863-MJE5851		ON SemiconductorBipolar Transistors - BJT 8A 350V 80W PNP
RoHS: Not compliant		0
    MJE5851GON Semiconductor 
    RoHS: Not Compliant    		14
    • 1000:$1.4300
    • 500:$1.5100
    • 100:$1.5700
    • 25:$1.6400
    • 1:$1.7700
    MJE5851G
    DISTI # C1S541900354298    		ON SemiconductorTrans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		390
    • 100:$1.5200
    • 10:$1.9250
    • 1:$2.0200
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    Қол жетімділік
    Қор:
    615
    Тапсырыс бойынша:
    2598
    Саны енгізіңіз:
    MJE5851G ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    2,90 $
    2,90 $
    10
    2,47 $
    24,70 $
    100
    1,97 $
    197,00 $
    500
    1,73 $
    865,00 $
    1000
    1,43 $
    1 430,00 $
    -ден бастаңыз
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