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IPD50N04S4L08ATMA1

IPD50N04S4L08ATMA1
Mfr. #:
IPD50N04S4L08ATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPD50N04S4L08ATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD50N04S4L08ATMA1 DatasheetIPD50N04S4L08ATMA1 Datasheet (P4-P6)IPD50N04S4L08ATMA1 Datasheet (P7-P9)
ECAD Model:
Көбірек ақпарат:
IPD50N04S4L08ATMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TO-252-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
40 V
Идентификатор - үздіксіз төгу тогы:
50 A
Rds On - ағызу көзіне қарсылық:
6.2 mOhms
Vgs th - Gate-Source шекті кернеуі:
1.2 V
Vgs - Шлюз көзі кернеуі:
20 V, - 16 V
Qg - қақпа заряды:
30 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
46 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Біліктілік:
AEC-Q101
Қаптама:
Ролик
Биіктігі:
2.3 mm
Ұзындығы:
6.5 mm
Серия:
XPD50N04
Транзистор түрі:
1 N-Channel
Ені:
6.22 mm
Бренд:
Infineon Technologies
Күз уақыты:
18 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
8 ns
Зауыттық буманың саны:
2500
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
11 ns
Қосудың әдеттегі кешігу уақыты:
4 ns
Бөлім # Бүркеншік аттар:
IPD50N04S4L-08 IPD5N4S4L8XT SP000711456
Бірлік салмағы:
0.139332 oz
Tags
IPD50N04S4L, IPD50N04S4, IPD50N04S, IPD50N04, IPD50N0, IPD50N, IPD50, IPD5, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 2500, N-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK Infineon IPD50N04S4L08ATMA1
***ical
Trans MOSFET N-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R
***p One Stop Japan
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) TO-252
***et Europe
Trans MOSFET N-CH 40V 50A 3-Pin TO-252 T/R
***ronik
MOSFET 40V 7.3mOHM AECQ TO252
***i-Key
MOSFET N-CH 40V 50A TO252-3-313
***ark
Mosfet, Aec-Q101, N-Ch, 40V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0062Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 40V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:46W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS-T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-N, 40V, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):0.0062ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:46W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS-T2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Package (RoHS compliant); 100% Avalanche tested | Benefits: Low switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control).; Body applications
20V to 40V N-Channel Automotive MOSFETs
Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.
Бөлім № Mfg. Сипаттама Қор Бағасы
IPD50N04S4L08ATMA1
DISTI # V72:2272_06391026		Infineon Technologies AGTrans MOSFET N-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2452
  • 1000:$0.3214
  • 500:$0.3492
  • 250:$0.3880
  • 100:$0.4164
  • 25:$0.6191
  • 10:$0.7055
  • 1:$0.8375
IPD50N04S4L08ATMA1
DISTI # V36:1790_06391026		Infineon Technologies AGTrans MOSFET N-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500000:$0.2430
  • 1250000:$0.2433
  • 250000:$0.2675
  • 25000:$0.3104
  • 2500:$0.3176
IPD50N04S4L08ATMA1
DISTI # IPD50N04S4L08ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 50A TO252-3-313
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2706In Stock
  • 1000:$0.3610
  • 500:$0.4512
  • 100:$0.5708
  • 10:$0.7440
  • 1:$0.8500
IPD50N04S4L08ATMA1
DISTI # IPD50N04S4L08ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 50A TO252-3-313
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2706In Stock
  • 1000:$0.3610
  • 500:$0.4512
  • 100:$0.5708
  • 10:$0.7440
  • 1:$0.8500
IPD50N04S4L08ATMA1
DISTI # IPD50N04S4L08ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 50A TO252-3-313
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 25000:$0.2774
  • 12500:$0.2847
  • 5000:$0.2957
  • 2500:$0.3176
IPD50N04S4L08ATMA1
DISTI # 31601475		Infineon Technologies AGTrans MOSFET N-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2452
  • 22:$0.8375
IPD50N04S4L08ATMA1
DISTI # IPD50N04S4L08ATMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 50A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD50N04S4L08ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2649
  • 15000:$0.2689
  • 10000:$0.2789
  • 5000:$0.2889
  • 2500:$0.2999
IPD50N04S4L08ATMA1
DISTI # IPD50N04S4L08ATMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 50A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD50N04S4L08ATMA1)
RoHS: Compliant
Min Qty: 1316
Container: Bulk		Americas - 0
    IPD50N04S4L08ATMA1
    DISTI # SP000711456    		Infineon Technologies AGTrans MOSFET N-CH 40V 50A 3-Pin(2+Tab) TO-252 (Alt: SP000711456)
    RoHS: Compliant
    Min Qty: 2500    		Europe - 0
    • 25000:€0.3019
    • 15000:€0.3249
    • 10000:€0.3619
    • 5000:€0.4059
    • 2500:€0.4789
    IPD50N04S4L08ATMA1
    DISTI # 12AC9711    		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0062ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power RoHS Compliant: Yes2255
    • 1000:$0.3370
    • 500:$0.3660
    • 250:$0.3940
    • 100:$0.4220
    • 50:$0.4990
    • 25:$0.5760
    • 10:$0.6530
    • 1:$0.7780
    IPD50N04S4L-08
    DISTI # 726-IPD50N04S4L-08    		Infineon Technologies AGMOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
    RoHS: Compliant    		8572
    • 1:$0.7700
    • 10:$0.6470
    • 100:$0.4180
    • 1000:$0.3340
    • 2500:$0.2820
    • 10000:$0.2720
    • 25000:$0.2610
    IPD50N04S4L08ATMA1
    DISTI # 726-IPD50N04S4L08ATM    		Infineon Technologies AGMOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
    RoHS: Compliant    		5021
    • 1:$0.7700
    • 10:$0.6470
    • 100:$0.4180
    • 1000:$0.3340
    • 2500:$0.2820
    • 10000:$0.2720
    • 25000:$0.2610
    IPD50N04S4L08ATMA1Infineon Technologies AG 2500
      IPD50N04S4L08ATMA1
      DISTI # 2709908      		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, TO-252
      RoHS: Compliant      		955
      • 1000:$0.5440
      • 500:$0.6800
      • 100:$0.8610
      • 10:$1.1300
      • 1:$1.2800
      IPD50N04S4L08ATMA1
      DISTI # XSKDRABV0051868      		Infineon Technologies AG 
      RoHS: Compliant      		7500 in Stock0 on Order
      • 7500:$0.3840
      • 2500:$0.4114
      IPD50N04S4L08ATMA1
      DISTI # 2709908      		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, TO-2521014
      • 500:£0.2500
      • 250:£0.2840
      • 100:£0.3190
      • 10:£0.5440
      • 1:£0.6720
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      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      1987
      Саны енгізіңіз:
      IPD50N04S4L08ATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      0,77 $
      0,77 $
      10
      0,65 $
      6,47 $
      100
      0,42 $
      41,80 $
      1000
      0,33 $
      334,00 $
      -ден бастаңыз
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