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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| NE3503M04-A DISTI # NE3503M04-A-ND | California Eastern Laboratories (CEL) | FET RF 4V 12GHZ M04 RoHS: Compliant Min Qty: 100 Container: Bulk | Limited Supply - Call | |
| NE3503M04-T2-A DISTI # NE3503M04-T2-A-ND | California Eastern Laboratories (CEL) | FET RF 4V 12GHZ M04 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| NE3503M04-T2B-A DISTI # NE3503M04-T2B-A-ND | California Eastern Laboratories (CEL) | FET RF 4V 12GHZ M04 RoHS: Compliant Min Qty: 1 Container: Tape & Reel (TR) | Limited Supply - Call | |
| NE3503M04-T2B-A DISTI # NE3503M04-T2B-A | Renesas Electronics Corporation | - Bulk (Alt: NE3503M04-T2B-A) Min Qty: 439 Container: Bulk | Americas - 0 |
|
| NE3503M04-T2-A DISTI # 551-NE3503M04-T2-A | California Eastern Laboratories (CEL) | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET RoHS: Compliant | 0 | |
| NE3503M04-A DISTI # 551-NE3503M04-A | California Eastern Laboratories (CEL) | RF JFET Transistors Low Noise HJ FET RoHS: Compliant | 0 | |
| NE3503M04-T2-A | Renesas Electronics Corporation | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET RoHS: Compliant | 33000 |
|
| NE3503M04-T2B-A | Renesas Electronics Corporation | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET RoHS: Compliant | 164000 |
|
| NE3503M04-T2B-A DISTI # NE3503M04-T2B-A | Renesas Electronics Corporation | RF SMALL SIGNAL TRANSISTOR HFET RoHS: Compliant | 0 | |
| NE3503M04T2A | NEC Electronics Group | RoHS: Compliant | 3000 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: NE3509M04-A OMO.#: OMO-NE3509M04-A |
RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET |
|
Mfr.#: NE3508M04-A OMO.#: OMO-NE3508M04-A-CEL |
RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET |
|
|
Mfr.#: NE3509M04-T2-A OMO.#: OMO-NE3509M04-T2-A-CEL |
Жаңа және түпнұсқа |
|
Mfr.#: NE350184C OMO.#: OMO-NE350184C-CEL |
FET RF 4V 20GHZ MICRO-X |
|
|
Mfr.#: NE350184C-T1 OMO.#: OMO-NE350184C-T1-1152 |
RF JFET Transistors Low Noise HJ FET |
|
|
Mfr.#: NE3503M04-T2 , ELM99501A |
Жаңа және түпнұсқа |
|
|
Mfr.#: NE3508M04 OMO.#: OMO-NE3508M04-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: NE3508M04-A-ND OMO.#: OMO-NE3508M04-A-ND-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: NE3509M04-EVNF24-A OMO.#: OMO-NE3509M04-EVNF24-A-CEL |
EVAL DEV RF NE3509M04 |
|
|
Mfr.#: NE3509M04-T2 OMO.#: OMO-NE3509M04-T2-1190 |
Жаңа және түпнұсқа |