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SISH617DN-T1-GE3

SISH617DN-T1-GE3
Mfr. #:
SISH617DN-T1-GE3
Өндіруші:
Vishay
Сипаттама:
MOSFET P-CHAN 30V POWERPAK 1212-
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SISH617DN-T1-GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
SISH617DN-T1-GE3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Tags
SISH6, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Бөлім № Mfg. Сипаттама Қор Бағасы
SISH617DN-T1-GE3
DISTI # SISH617DN-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5740In Stock
  • 1000:$0.3942
  • 500:$0.4993
  • 100:$0.6045
  • 10:$0.7750
  • 1:$0.8700
SISH617DN-T1-GE3
DISTI # SISH617DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5740In Stock
  • 1000:$0.3942
  • 500:$0.4993
  • 100:$0.6045
  • 10:$0.7750
  • 1:$0.8700
SISH617DN-T1-GE3
DISTI # SISH617DN-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 15000:$0.3402
  • 6000:$0.3444
  • 3000:$0.3700
SISH617DN-T1-GE3
DISTI # SISH617DN-T1-GE3		Vishay IntertechnologiesP-CHANEL 30 V (D-S) MOSFET 12.3 MO @ 10V MO @ 7.5V 22.2 MO @ 4.5V - Tape and Reel (Alt: SISH617DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.3109
  • 30000:$0.3199
  • 18000:$0.3289
  • 12000:$0.3429
  • 6000:$0.3529
SISH617DN-T1-GE3
DISTI # 59AC7451		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
  • 50000:$0.3140
  • 30000:$0.3280
  • 20000:$0.3530
  • 10000:$0.3770
  • 5000:$0.4090
  • 1:$0.4180
SISH617DN-T1-GE3
DISTI # 78AC6532		Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W,Transistor Polarity:P Channel,Continuous Drain Current Id:-35A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0103ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,RoHS Compliant: Yes5975
  • 1000:$0.3930
  • 500:$0.4910
  • 250:$0.5430
  • 100:$0.5950
  • 50:$0.6580
  • 25:$0.7210
  • 10:$0.7840
  • 1:$0.9800
SISH617DN-T1-GE3
DISTI # 78-SISH617DN-T1-GE3		Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs PowerPAK 1212-8
RoHS: Compliant		8813
  • 1:$0.9600
  • 10:$0.7750
  • 100:$0.5880
  • 500:$0.4860
  • 1000:$0.3880
  • 3000:$0.3520
  • 6000:$0.3280
  • 9000:$0.3150
  • 24000:$0.3030
SISH617DN-T1-GE3
DISTI # 1783697		Vishay IntertechnologiesP-CHANEL 30 V (D-S) MOSFET POWERPAK 1212, RL6000
  • 3000:£0.2600
SISH617DN-T1-GE3
DISTI # 2932960		Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W
RoHS: Compliant		5975
  • 1000:$0.5640
  • 500:$0.5950
  • 250:$0.7020
  • 100:$0.8530
  • 10:$1.0900
  • 1:$1.3200
SISH617DN-T1-GE3
DISTI # 2932960		Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W5975
  • 500:£0.3560
  • 250:£0.3940
  • 100:£0.4320
  • 25:£0.5700
  • 5:£0.6360
Сурет Бөлім № Сипаттама
SISH617DN-T1-GE3

Mfr.#: SISH617DN-T1-GE3

OMO.#: OMO-SISH617DN-T1-GE3

 MOSFET -30V Vds 25V Vgs PowerPAK 1212-8
SISH617DN-T1-GE3

Mfr.#: SISH617DN-T1-GE3

OMO.#: OMO-SISH617DN-T1-GE3-VISHAY

 MOSFET P-CHAN 30V POWERPAK 1212-
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
3000
Саны енгізіңіз:
SISH617DN-T1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,45 $
0,45 $
10
0,43 $
4,32 $
100
0,41 $
40,91 $
500
0,39 $
193,15 $
1000
0,36 $
363,60 $
-ден бастаңыз
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