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STGW60H65DFB

STGW60H65DFB
Mfr. #:
STGW60H65DFB
Өндіруші:
STMicroelectronics
Сипаттама:
IGBT Transistors 600V 60A trench gate field-stop IGBT
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
STGW60H65DFB Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
STGW60H65DFB Көбірек ақпарат STGW60H65DFB Product Details
Өнім атрибуты
Төлсипат мәні
Өндіруші:
STMicroelectronics
Өнім санаты:
IGBT транзисторлары
RoHS:
Y
Технология:
Си
Пакет/қорап:
TO-247-3
Орнату стилі:
Тесік арқылы
Конфигурация:
Бойдақ
Коллектор-эмиттер кернеуі VCEO Max:
650 V
Коллектор-эмиттер қанығу кернеуі:
1.6 V
Шықпа эмитентінің максималды кернеуі:
20 V
Үздіксіз коллектор тогы 25 С:
80 A
Pd - қуаттың шығыны:
375 W
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Серия:
STGW60H65DFB
Қаптама:
Түтік
Үздіксіз коллектор ток Ic макс:
60 A
Бренд:
STMicroelectronics
Шлюз-эмиттер ағып кету тогы:
250 nA
Өнім түрі:
IGBT транзисторлары
Зауыттық буманың саны:
600
Ішкі санат:
IGBT
Бірлік салмағы:
1.340411 oz
Tags
STGW60H65DF, STGW60H65D, STGW60H65, STGW60H, STGW6, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW Series Advanced Trench Gate Field Stop Through Hole IGBT - TO-247-3
***p One Stop Global
Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube
***ied Electronics & Automation
IGBT N-Ch 650V 60A High-Speed TO247
***ronik
IGBT 650V 80A 1,75V TO247-3
***i-Key
IGBT 650V 80A 375W TO-247
***ark
Igbt, Single, 650V, 80A, To-247-3; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)
***nell
IGBT, SINGOLO, 650V, 80A, TO-247-3; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:375W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Бөлім № Mfg. Сипаттама Қор Бағасы
STGW60H65DFB
DISTI # 497-14367-ND		STMicroelectronicsIGBT 650V 80A 375W TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1020:$2.7783
  • 510:$3.2943
  • 120:$3.8697
  • 30:$4.4650
  • 1:$5.2600
STGW60H65DFB-4
DISTI # STGW60H65DFB-4-ND		STMicroelectronicsIGBT
RoHS: Not compliant
Min Qty: 600
Container: Tube		Temporarily Out of Stock
  • 600:$5.6963
STGW60H65DFB
DISTI # STGW60H65DFB		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: STGW60H65DFB)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€3.0400
  • 10:€2.8000
  • 100:€2.6800
  • 250:€2.5700
  • 500:€2.4600
  • 1000:€2.0600
STGW60H65DFB
DISTI # STGW60H65DFB		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW60H65DFB)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$2.7900
  • 1200:$2.6900
  • 2400:$2.4900
  • 3600:$2.3900
  • 6000:$2.3900
STGW60H65DFB-4
DISTI # STGW60H65DFB-4		STMicroelectronicsPTD HIGH VOLTAGE - Trays (Alt: STGW60H65DFB-4)
RoHS: Compliant
Min Qty: 600
Container: Tray		Americas - 0
  • 600:$5.1900
  • 1200:$4.9900
  • 2400:$4.6900
  • 3600:$4.4900
  • 6000:$4.3900
STGW60H65DFB
DISTI # 511-STGW60H65DFB		STMicroelectronicsIGBT Transistors 600V 60A trench gate field-stop IGBT
RoHS: Compliant		0
  • 1:$5.0000
  • 10:$4.2500
  • 100:$3.6800
  • 250:$3.4900
  • 500:$3.1300
  • 1000:$2.6400
  • 2500:$2.5100
STGW60H65DFB-4
DISTI # 511-STGW60H65DFB-4		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed0
  • 1:$8.3300
  • 10:$7.5300
  • 25:$7.1800
  • 100:$6.2300
  • 250:$5.9600
  • 500:$5.4300
  • 1000:$4.7300
STGW60H65DFB
DISTI # 2629740		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247-3
RoHS: Compliant		0
  • 500:£2.0500
  • 250:£2.2000
  • 100:£2.3800
  • 10:£2.6500
  • 1:£3.2000
STGW60H65DFB-4
DISTI # 2778105		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247
RoHS: Compliant		100
  • 100:£3.5600
  • 50:£3.5700
  • 10:£3.5800
  • 5:£3.6300
  • 1:£3.7000
STGW60H65DFB-4
DISTI # 2778105		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247
RoHS: Compliant		100
  • 250:$8.0900
  • 100:$8.6800
  • 50:$9.7400
  • 10:$10.8500
  • 5:$12.2400
  • 1:$14.0400
STGW60H65DFB-4
DISTI # XSFP00000113820		STMicroelectronicsPower Field-Effect Transistor, 11A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-263AB
RoHS: Compliant		80 in Stock0 on Order
  • 80:$11.0000
  • 17:$12.1000
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Қол жетімділік
Қор:
380
Тапсырыс бойынша:
2363
Саны енгізіңіз:
STGW60H65DFB ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
5,00 $
5,00 $
10
4,25 $
42,50 $
100
3,68 $
368,00 $
250
3,49 $
872,50 $
500
3,13 $
1 565,00 $
1000
2,64 $
2 640,00 $
2500
2,51 $
6 275,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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