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IRFS4010TRLPBF

IRFS4010TRLPBF
Mfr. #:
IRFS4010TRLPBF
Өндіруші:
Infineon / IR
Сипаттама:
MOSFET MOSFT 100V 180A 4.7mOhm 143nC Qg
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IRFS4010TRLPBF Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS4010TRLPBF DatasheetIRFS4010TRLPBF Datasheet (P4-P6)IRFS4010TRLPBF Datasheet (P7-P9)IRFS4010TRLPBF Datasheet (P10)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TO-252-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
100 V
Идентификатор - үздіксіз төгу тогы:
180 A
Rds On - ағызу көзіне қарсылық:
3.9 mOhms
Vgs th - Gate-Source шекті кернеуі:
4 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
143 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
375 W
Конфигурация:
Бойдақ
Қаптама:
Ролик
Биіктігі:
2.3 mm
Ұзындығы:
6.5 mm
Транзистор түрі:
1 N-Channel
Ені:
6.22 mm
Бренд:
Infineon / IR
Форвард өткізгіштік - Мин:
189 S
Күз уақыты:
77 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
86 ns
Зауыттық буманың саны:
800
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
100 ns
Қосудың әдеттегі кешігу уақыты:
21 ns
Бөлім # Бүркеншік аттар:
SP001550124
Бірлік салмағы:
0.139332 oz
Tags
IRFS4010TRLP, IRFS4010TRL, IRFS4010T, IRFS401, IRFS40, IRFS4, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***-Tronics LLC (USA)
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 180A D2PAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - D2PAK
***Yang
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (
***ment14 APAC
MOSFET, N-CH, 100V, 180A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:100V; On Resistance
***roFlash
Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 100V, 180A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0039ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***(Formerly Allied Electronics)
AUIRFS4010 N-channel MOSFET Transistor; 180 A; 100 V; 3-Pin D2PAK
***ical
Trans MOSFET N-CH Si 100V 180A Automotive 3-Pin(2+Tab) D2PAK Tube
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package
***ment14 APAC
MOSFET, N-CH, 100V, 180A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***et
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET, 100V, 180A, 4.7MOHM, 143NC QG, D2PAK
***ment14 APAC
MOSFET, N-CH, 100V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.9mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:9575pF; Current Id Max:180A; Package / Case:D2-PAK; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Pulse Current Idm:720A; Reverse Recovery Time trr Typ:72ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***ure Electronics
FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3
***Yang
Trans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ
***hard Electronics
N CH MOSFET, POWERTRENCH, 100V, 120A, D2PAK - More Details
***ment14 APAC
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Source Voltage Vds:100V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
*** Source Electronics
Trans MOSFET N-CH Si 100V 190A Automotive 7-Pin(6+Tab) D2PAK T/R / HEXFETPower MOSFET
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
***el Electronic
Power Field-Effect Transistor, 190A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7
Бөлім № Mfg. Сипаттама Қор Бағасы
IRFS4010TRLPBF
DISTI # 26992941		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		800
  • 800:$1.6276
IRFS4010TRLPBF
DISTI # 31234198		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		100
  • 100:$3.5063
  • 50:$4.0927
  • 10:$4.8450
  • 6:$4.9088
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBFCT-ND		Infineon Technologies AGMOSFET N-CH 100V 180A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5163In Stock
  • 100:$3.4782
  • 10:$4.2420
  • 1:$4.7500
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 100V 180A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5163In Stock
  • 100:$3.4782
  • 10:$4.2420
  • 1:$4.7500
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBFTR-ND		Infineon Technologies AGMOSFET N-CH 100V 180A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		3200In Stock
  • 800:$2.4709
IRFS4010TRLPBF
DISTI # C1S322000495207		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		100
  • 100:$2.7500
  • 50:$3.2100
  • 10:$3.8000
  • 1:$3.8500
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBF		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: IRFS4010TRLPBF)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape		Americas - 21
  • 1:$2.8900
  • 8:$2.8900
  • 20:$2.8900
  • 40:$2.8900
  • 100:$2.7900
  • 200:$2.6900
  • 400:$2.3900
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBF		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS4010TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 32000
  • 800:$1.6900
  • 1600:$1.5900
  • 3200:$1.5900
  • 4800:$1.4900
  • 8000:$1.4900
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBF		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R (Alt: IRFS4010TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
    IRFS4010TRLPBFInfineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
    RoHS: Compliant
    Container: Reel    		Americas - 0
      IRFS4010TRLPBF
      DISTI # 13AC9154      		Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-263AB,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes145
      • 1:$3.9700
      • 10:$3.3700
      • 25:$3.2200
      • 50:$3.0800
      • 100:$2.9300
      • 250:$2.7800
      • 500:$2.4900
      IRFS4010TRLPBF.
      DISTI # 26AC0562      		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:375W,No. of Pins:3Pins RoHS Compliant: Yes0
      • 1:$2.0900
      • 1600:$1.9900
      • 3200:$1.8900
      • 8000:$1.7900
      IRFS4010TRLPBF
      DISTI # 70019745      		Infineon Technologies AGMOSFET,100V,180A,4.7 MOHM,143 NC QG,D2-PAK
      RoHS: Compliant      		0
      • 2:$5.7800
      IRFS4010TRLPBF
      DISTI # 942-IRFS4010TRLPBF      		Infineon Technologies AGMOSFET MOSFT 100V 180A 4.7mOhm 143nC Qg
      RoHS: Compliant      		3485
      • 1:$3.9700
      • 10:$3.3700
      • 100:$2.9300
      • 250:$2.7800
      • 500:$2.4900
      IRFS4010TRLPBF
      DISTI # 1300999P      		Infineon Technologies AGMOSFET HEXFET N-CH 100V 180A D2PAK, RL914
      • 10:£2.2100
      • 100:£1.8950
      • 500:£1.5100
      • 1000:£1.4550
      IRFS4010TRLPBF
      DISTI # 2725983      		Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-263AB
      RoHS: Compliant      		210
      • 1:£2.7000
      • 10:£2.2500
      • 100:£1.9400
      • 250:£1.8100
      • 500:£1.6900
      IRFS4010TRLPBF
      DISTI # 2725983      		Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-263AB
      RoHS: Compliant      		295
      • 1:$7.5800
      • 10:$6.7700
      • 100:$5.5500
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      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      1986
      Саны енгізіңіз:
      IRFS4010TRLPBF ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      2,97 $
      2,97 $
      10
      2,53 $
      25,30 $
      100
      2,19 $
      219,00 $
      250
      2,08 $
      520,00 $
      500
      1,86 $
      930,00 $
      2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
      -ден бастаңыз
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