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SISF00DN-T1-GE3

SISF00DN-T1-GE3
Mfr. #:
SISF00DN-T1-GE3
Өндіруші:
Vishay / Siliconix
Сипаттама:
MOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SISF00DN-T1-GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISF00DN-T1-GE3 DatasheetSISF00DN-T1-GE3 Datasheet (P4-P6)SISF00DN-T1-GE3 Datasheet (P7)
ECAD Model:
Көбірек ақпарат:
SISF00DN-T1-GE3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Вишай
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PowerPAK-1212-8SCD-8
Арналар саны:
2 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
30 V
Идентификатор - үздіксіз төгу тогы:
60 A
Rds On - ағызу көзіне қарсылық:
4.2 mOhms
Vgs th - Gate-Source шекті кернеуі:
2.1 V
Vgs - Шлюз көзі кернеуі:
- 16 V, 20 V
Qg - қақпа заряды:
53 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
69.4 W
Конфигурация:
Қосарлы
Арна режимі:
Жақсарту
Сауда атауы:
TrenchFET, PowerPAK
Қаптама:
Ролик
Серия:
СӨЖ
Транзистор түрі:
2 N-Channel
Бренд:
Вишай / Силиконикс
Форвард өткізгіштік - Мин:
130 S
Күз уақыты:
10 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
32 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
22 ns
Қосудың әдеттегі кешігу уақыты:
10 ns
Tags
SISF, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFETs with Common Drain
Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Бөлім № Mfg. Сипаттама Қор Бағасы
SISF00DN-T1-GE3
DISTI # SISF00DN-T1-GE3TR-ND		Vishay SiliconixMOSFET DUAL N-CH 30V POWERPAK 12
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 6000:$0.5954
  • 3000:$0.6252
SISF00DN-T1-GE3
DISTI # SISF00DN-T1-GE3CT-ND		Vishay SiliconixMOSFET DUAL N-CH 30V POWERPAK 12
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.6899
  • 500:$0.8739
  • 100:$1.0579
  • 10:$1.3570
  • 1:$1.5200
SISF00DN-T1-GE3
DISTI # SISF00DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET DUAL N-CH 30V POWERPAK 12
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.6899
  • 500:$0.8739
  • 100:$1.0579
  • 10:$1.3570
  • 1:$1.5200
SISF00DN-T1-GE3
DISTI # SISF00DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET Array Dual N-CH 30V 60A 8-Pin PowerPAK 1212-8SCD - Tape and Reel (Alt: SISF00DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.5449
  • 30000:$0.5599
  • 18000:$0.5759
  • 12000:$0.5999
  • 6000:$0.6189
SISF00DN-T1-GE3
DISTI # 81AC2794		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK 1212,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V,RoHS Compliant: Yes0
  • 500:$0.8170
  • 250:$0.8830
  • 100:$0.9490
  • 50:$1.0400
  • 25:$1.1400
  • 10:$1.2300
  • 1:$1.4900
SISF00DN-T1-GE3
DISTI # 81AC3490		Vishay IntertechnologiesCOMMON-DRAIN DUAL N-CH 30V(S1-S2)MOS0
  • 10000:$0.5410
  • 6000:$0.5530
  • 4000:$0.5750
  • 2000:$0.6380
  • 1000:$0.7020
  • 1:$0.7320
SISF00DN-T1-GE3
DISTI # 78-SISF00DN-T1-GE3		Vishay IntertechnologiesMOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD
RoHS: Compliant		0
  • 1:$1.4800
  • 10:$1.2200
  • 100:$0.9400
  • 500:$0.8090
  • 1000:$0.6380
  • 3000:$0.5960
SISF00DN-T1-GE3
DISTI # 2932982		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK 12120
  • 500:£0.5930
  • 250:£0.6410
  • 100:£0.6890
  • 25:£0.9010
  • 5:£0.9980
SISF00DN-T1-GE3
DISTI # 2932982		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK 1212
RoHS: Compliant		0
  • 1000:$1.0100
  • 500:$1.0600
  • 250:$1.2500
  • 100:$1.5200
  • 10:$1.9300
  • 1:$2.3400
Сурет Бөлім № Сипаттама
SISF00DN-T1-GE3

Mfr.#: SISF00DN-T1-GE3

OMO.#: OMO-SISF00DN-T1-GE3

 MOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD
SISF00DN-T1-GE3

Mfr.#: SISF00DN-T1-GE3

OMO.#: OMO-SISF00DN-T1-GE3-VISHAY

 MOSFET DUAL N-CH 30V POWERPAK 12
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
2000
Саны енгізіңіз:
SISF00DN-T1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,48 $
1,48 $
10
1,22 $
12,20 $
100
0,94 $
94,00 $
500
0,81 $
404,50 $
1000
0,64 $
638,00 $
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