IRF8252PBF

IRF8252PBF
Mfr. #:
IRF8252PBF
Өндіруші:
Infineon / IR
Сипаттама:
MOSFET 25V 1 N-CH HEXFET 2.7mOhms 35nC
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IRF8252PBF Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8252PBF DatasheetIRF8252PBF Datasheet (P4-P6)IRF8252PBF Datasheet (P7-P9)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
SO-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
25 V
Идентификатор - үздіксіз төгу тогы:
25 A
Rds On - ағызу көзіне қарсылық:
3.7 mOhms
Vgs th - Gate-Source шекті кернеуі:
2.35 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
35 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
2.5 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Түтік
Биіктігі:
1.75 mm
Ұзындығы:
4.9 mm
Транзистор түрі:
1 N-Channel
Түрі:
HEXFET Power MOSFET
Ені:
3.9 mm
Бренд:
Infineon / IR
Форвард өткізгіштік - Мин:
89 S
Күз уақыты:
12 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
32 ns
Зауыттық буманың саны:
95
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
19 ns
Қосудың әдеттегі кешігу уақыты:
23 ns
Бөлім # Бүркеншік аттар:
SP001554466
Бірлік салмағы:
0.019048 oz
Tags
IRF825, IRF82, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 25V 25A 8-Pin SOIC Tube
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters, SO8, RoHS
***ment14 APAC
MOSFET, N-CH, 25V, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:SOIC-8; Power Dissipation Pd:2.5W; Pulse Current Idm:200A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V
***ark
Mosfet Transistor, N Channel, 24 A, 30 V, 0.0023 Ohm, 10 V, 1.8 V Rohs Compliant: Yes
***(Formerly Allied Electronics)
IRF8788PBF N-channel MOSFET Transistor,24 A, 30 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 2.8 mOhm 66 nC HEXFET® Power Mosfet - SOIC-8
***p One Stop
Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R
***nell
MOSFET, N-CH, 30V, SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissi
***ure Electronics
N-Channel 30 V 4.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ
***Yang
Trans MOSFET N-CH 30V 18.5A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
***ment14 APAC
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.5mohm; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5mW; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:74A; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
***ure Electronics
Single N-Channel 30 V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8
***roFlash
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.32V; Power Dissi
***roFlash
IRF8736PBF N-channel MOSFET Transistor, 18 A, 30 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 6.8 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 30V 18A 8-Pin SOIC Tube / MOSFET N-CH 30V 18A 8-SOIC
***(Formerly Allied Electronics)
MOSFET; N Ch.; 30V; 18A; 4.8 MOHM; 17 NC QG; SO-8; Pb-Free
***ure Electronics
Si4156DY Series N-Channel 30 V 0.006 Ohm 6 W Surface Mount Power Mosfet - SOIC-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.0048Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:2.2V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes
***ment14 APAC
MOSFET,N CH,30V,24A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:15.7A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
***Yang
Trans MOSFET P-CH 30V 20A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
***ure Electronics
P-Channel 30 V 4.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
P-Channel PowerTrench® MOSFET, 30V, -20A, 4.6mΩ
*** Electronics
ON SEMICONDUCTOR - FDS6681Z - MOSFET Transistor, P Channel, -20 A, -30 V, 0.0038 ohm, -10 V, -1.8 V
***et Europe
Trans MOSFET P-CH 30V 20A 8-Pin SOIC N T/R
***rchild Semiconductor
This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Бөлім № Mfg. Сипаттама Қор Бағасы
IRF8252PBF
DISTI # IRF8252PBF-ND
Infineon Technologies AGMOSFET N-CH 25V 25A 8-SO
RoHS: Compliant
Min Qty: 3800
Container: Tube
Limited Supply - Call
    IRF8252PBF
    DISTI # IRF8252PBF
    Infineon Technologies AGTrans MOSFET N-CH 25V 25A 8-Pin SOIC - Rail/Tube (Alt: IRF8252PBF)
    RoHS: Compliant
    Min Qty: 3800
    Container: Tube
    Americas - 3930
      IRF8252PBFInternational RectifierPower Field-Effect Transistor, 25A I(D), 25V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET
      RoHS: Compliant
      1458
      • 1000:$0.6200
      • 500:$0.6500
      • 100:$0.6800
      • 25:$0.7100
      • 1:$0.7600
      IRF8252PBF
      DISTI # 942-IRF8252PBF
      Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 2.7mOhms 35nC
      RoHS: Compliant
      0
        IRF8252PBFInternational Rectifier25 A, 25 V, 0.0027 OHM, N-CHANNEL, SI, POWER, MOSFET40
        • 18:$0.6000
        • 5:$0.9000
        • 1:$1.2000
        IRF8252PBFInternational Rectifier 3325
          IRF8252PBF
          DISTI # 1688581
          Infineon Technologies AGMOSFET, N-CH, 25V, SO8
          RoHS: Compliant
          0
          • 1:$2.3600
          • 10:$1.9400
          • 100:$1.5700
          • 500:$1.4000
          • 1000:$1.2400
          Сурет Бөлім № Сипаттама
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          MOSFET N-CH 500V 2.5A D2PAK
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          OMO.#: OMO-IRF820STRRPBF-VISHAY

          MOSFET N-CH 500V 2.5A D2PAK
          IRF821TRPBF

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          OMO.#: OMO-IRF821TRPBF-1190

          Жаңа және түпнұсқа
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          Mfr.#: IRF823 H2

          OMO.#: OMO-IRF823-H2-1190

          Жаңа және түпнұсқа
          Қол жетімділік
          Қор:
          Available
          Тапсырыс бойынша:
          1500
          Саны енгізіңіз:
          IRF8252PBF ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
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