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IRF6618TR1

IRF6618TR1
Mfr. #:
IRF6618TR1
Өндіруші:
Infineon / IR
Сипаттама:
MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IRF6618TR1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
N
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
DirectFET-MT
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
30 V
Идентификатор - үздіксіз төгу тогы:
29 A
Rds On - ағызу көзіне қарсылық:
2.2 mOhms
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
43 nC
Ең төменгі жұмыс температурасы:
- 40 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
2.8 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Ролик
Биіктігі:
0.7 mm
Ұзындығы:
6.35 mm
Транзистор түрі:
1 N-Channel
Түрі:
HEXFET Power MOSFET
Ені:
5.05 mm
Бренд:
Infineon / IR
Күз уақыты:
8.1 ns
Ылғалға сезімтал:
Иә
Өнім түрі:
MOSFET
Көтеру уақыты:
71 ns
Зауыттық буманың саны:
1000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
27 ns
Қосудың әдеттегі кешігу уақыты:
21 ns
Tags
IRF6618TR1, IRF6618T, IRF6618, IRF661, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT packag
***ark
MOSFET, N, DIRECTFET, MT; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:170A; Resistance, Rds On:2.2mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.64V; Case Style:MT; ;RoHS Compliant: Yes
***ernational Rectifier
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in
***nell
MOSFET, N, DIRECTFET, MT; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:170A; Resistance, Rds On:2.2mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.64V; Case Style:MT; Termination Type:SMD; Current, Idm Pulse:240A; External Depth:6.35mm; External Length / Height:0.7mm; IC Package (Case style):MT; No. of Pins:7; Power Dissipation:2.8W; Power, Pd:2.8W; Resistance, Rds on Max:2.2mohm; SMD Marking:6618; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-40°C; Time, trr Typ:43ns; Transistors, No. of:1; Typ Capacitance Ciss:5640pF; Typ Charge Qrr @ Tj = 25°C:46nC; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs Max:20V; Voltage, Vgs th Max:2.35V; Voltage, Vgs th Min:1.35V; Width, External:5.05mm
Бөлім № Mfg. Сипаттама Қор Бағасы
IRF6618TR1
DISTI # IRF6618TR1-ND		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
RoHS: Not compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6618TR1PBF
    DISTI # IRF6618TR1PBFTR-ND    		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Limited Supply - Call
      IRF6618TR1PBF
      DISTI # IRF6618TR1PBFCT-ND      		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		Limited Supply - Call
        IRF6618TR1PBF
        DISTI # IRF6618TR1PBFDKR-ND        		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®        		Limited Supply - Call
          IRF6618TR1PBF
          DISTI # 70018828          		Infineon Technologies AG30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE,DIRECTFET MT
          RoHS: Compliant          		0
          • 1000:$2.5000
          • 2000:$2.3000
          IRF6618TR1
          DISTI # 942-IRF6618TR1          		Infineon Technologies AGMOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
          RoHS: Not compliant          		0
            IRF6618TR1PBF
            DISTI # 942-IRF6618TR1PBF            		Infineon Technologies AGMOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
            RoHS: Compliant            		0
              IRF6618TR1International Rectifier30 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET66
              • 10:$2.1750
              • 3:$2.9000
              • 1:$4.3500
              IRF6618TR1
              DISTI # 9266585              		Infineon Technologies AG 
              RoHS: Compliant              		0
              • 1:$4.8000
              • 10:$4.5000
              • 100:$4.0700
              • 250:$3.9200
              • 500:$3.7200
              • 1000:$3.7200
              Сурет Бөлім № Сипаттама
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              Mfr.#: IRF6643TRPBF-CUT TAPE

              OMO.#: OMO-IRF6643TRPBF-CUT-TAPE-1190

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              OMO.#: OMO-IRF6619TRPBF-INFINEON-TECHNOLOGIES

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              IRF6637TRPBF

              Mfr.#: IRF6637TRPBF

              OMO.#: OMO-IRF6637TRPBF-INFINEON-TECHNOLOGIES

              		 MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
              Қол жетімділік
              Қор:
              Available
              Тапсырыс бойынша:
              4500
              Саны енгізіңіз:
              IRF6618TR1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
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