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HGT1S10N120BNS

HGT1S10N120BNS
Mfr. #:
HGT1S10N120BNS
Өндіруші:
ON Semiconductor / Fairchild
Сипаттама:
IGBT Transistors 35A 1200V NPT N-Ch
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
HGT1S10N120BNS Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ON Жартылай өткізгіш
Өнім санаты:
IGBT транзисторлары
RoHS:
E
Технология:
Си
Пакет/қорап:
TO-263AB-3
Орнату стилі:
SMD/SMT
Конфигурация:
Бойдақ
Коллектор-эмиттер кернеуі VCEO Max:
1200 V
Коллектор-эмиттер қанығу кернеуі:
2.7 V
Шықпа эмитентінің максималды кернеуі:
20 V
Үздіксіз коллектор тогы 25 С:
35 A
Pd - қуаттың шығыны:
298 W
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Серия:
HGT1S10N120BNS
Қаптама:
Түтік
Үздіксіз коллектор ток Ic макс:
35 A
Биіктігі:
4.83 mm
Ұзындығы:
10.67 mm
Ені:
9.65 mm
Бренд:
ON Semiconductor / Fairchild
Үздіксіз коллекторлық ток:
55 A
Шлюз-эмиттер ағып кету тогы:
+/- 250 nA
Өнім түрі:
IGBT транзисторлары
Зауыттық буманың саны:
800
Ішкі санат:
IGBT
Бірлік салмағы:
0.046296 oz
Tags
HGT1S10N120BNS, HGT1S10N120B, HGT1S10N1, HGT1S10, HGT1S1, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK Rail
***et
Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) TO-263AB Rail
***ark
TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,17A I(C),TO-263AB
*** Source Electronics
35A, 1200V, NPT Series N-Channel IGBT
***inecomponents.com
1200V, NPT Series N-Channel IGBT
***i-Key
IGBT NPT N-CHAN 1200V TO-263AB
***ser
IGBTs 35A,1200V, NPT, N-Ch
***Semiconductor
IGBT, 1200V, NPT
***rchild Semiconductor
HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
Бөлім № Mfg. Сипаттама Қор Бағасы
HGT1S10N120BNST
DISTI # V72:2272_06305664		ON SemiconductorTO-263, SINGLE, 1200V, NPT SER142
  • 100:$2.0040
  • 25:$2.0790
  • 10:$2.3100
  • 1:$2.9854
HGT1S10N120BNS
DISTI # V36:1790_06359750		ON SemiconductorTrans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK Rail0
  • 800000:$1.1230
  • 400000:$1.1260
  • 80000:$1.3650
  • 8000:$1.7870
  • 800:$1.8570
HGT1S10N120BNST
DISTI # V36:1790_06305664		ON SemiconductorTO-263, SINGLE, 1200V, NPT SER0
  • 800000:$1.0960
  • 400000:$1.0980
  • 80000:$1.2300
  • 8000:$1.4410
  • 800:$1.4750
HGT1S10N120BNST
DISTI # HGT1S10N120BNSTCT-ND		ON SemiconductorIGBT 1200V 35A 298W TO263AB
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1219In Stock
  • 100:$1.8491
  • 10:$2.3010
  • 1:$2.5600
HGT1S10N120BNST
DISTI # HGT1S10N120BNSTDKR-ND		ON SemiconductorIGBT 1200V 35A 298W TO263AB
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1219In Stock
  • 100:$1.8491
  • 10:$2.3010
  • 1:$2.5600
HGT1S10N120BNST
DISTI # HGT1S10N120BNSTTR-ND		ON SemiconductorIGBT 1200V 35A 298W TO263AB
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		800In Stock
  • 5600:$1.1238
  • 2400:$1.1378
  • 1600:$1.2221
  • 800:$1.4750
HGT1S10N120BNS
DISTI # HGT1S10N120BNSFS-ND		ON SemiconductorIGBT 1200V 35A 298W TO263AB
RoHS: Compliant
Min Qty: 800
Container: Tube		Limited Supply - Call
  • 800:$1.8570
HGT1S10N120BNST
DISTI # 33655150		ON SemiconductorTO-263, SINGLE, 1200V, NPT SER43200
  • 800:$0.7910
HGT1S10N120BNS
DISTI # 23486344		ON SemiconductorTrans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK Rail800
  • 800:$1.2360
HGT1S10N120BNST
DISTI # 33965439		ON SemiconductorTO-263, SINGLE, 1200V, NPT SER800
  • 800:$1.0072
HGT1S10N120BNST
DISTI # 25744132		ON SemiconductorTO-263, SINGLE, 1200V, NPT SER142
  • 5:$2.9854
HGT1S10N120BNS
DISTI # HGT1S10N120BNS		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) TO-263AB Rail - Bulk (Alt: HGT1S10N120BNS)
RoHS: Compliant
Min Qty: 92
Container: Bulk		Americas - 0
  • 920:$3.2900
  • 460:$3.3900
  • 92:$3.4900
  • 184:$3.4900
  • 276:$3.4900
HGT1S10N120BNS
DISTI # HGT1S10N120BNS		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) TO-263AB Rail - Rail/Tube (Alt: HGT1S10N120BNS)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 3200:$1.0900
  • 4800:$1.0900
  • 8000:$1.0900
  • 800:$1.1900
  • 1600:$1.1900
HGT1S10N120BNST
DISTI # HGT1S10N120BNST		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R (Alt: HGT1S10N120BNST)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 8000:€0.8659
  • 4800:€0.9279
  • 3200:€0.9999
  • 1600:€1.0829
  • 800:€1.2999
HGT1S10N120BNST
DISTI # HGT1S10N120BNST		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: HGT1S10N120BNST)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 4800:$1.0900
  • 8000:$1.0900
  • 800:$1.1900
  • 1600:$1.1900
  • 3200:$1.1900
HGT1S10N120BNS
DISTI # 98B1956		ON SemiconductorTRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,17A I(C),TO-263AB RoHS Compliant: Yes0
  • 500:$2.4500
  • 250:$2.5200
  • 100:$3.0100
  • 50:$3.4800
  • 25:$3.7100
  • 10:$4.2300
  • 1:$4.8900
HGT1S10N120BNST
DISTI # 29H0101		ON SemiconductorIGBT Single Transistor, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 RoHS Compliant: Yes0
  • 9600:$1.3700
  • 2400:$1.4100
  • 800:$1.5400
  • 1:$1.5500
HGT1S10N120BNST
DISTI # 31Y1824		ON SemiconductorIGBT Single Transistor, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 RoHS Compliant: Yes496
  • 500:$1.9900
  • 250:$2.1900
  • 100:$2.2900
  • 50:$2.3900
  • 25:$2.5000
  • 10:$2.6000
  • 1:$3.0200
HGT1S10N120BNS
DISTI # 512-HGT1S10N120BNS		ON SemiconductorIGBT Transistors 35A 1200V NPT N-Ch
RoHS: Compliant		0
    HGT1S10N120BNST
    DISTI # 512-HGT1S10N120BNST    		ON SemiconductorIGBT Transistors N-Channel IGBT NPT Series 1200V
    RoHS: Compliant    		497
    • 1:$2.7300
    • 10:$2.3200
    • 100:$2.0100
    • 250:$1.9100
    • 500:$1.7100
    • 800:$1.4400
    • 2400:$1.3700
    • 4800:$1.3200
    HGT1S10N120BNSFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
    RoHS: Compliant    		493
    • 1000:$1.3600
    • 500:$1.4300
    • 100:$1.4900
    • 25:$1.5500
    • 1:$1.6700
    HGT1S10N120BNST
    DISTI # 8076660P    		ON SemiconductorIGBTFAIRCHILDHGT1S10N120BNST, RL1410
    • 400:£1.7550
    • 200:£2.0700
    • 40:£2.3850
    • 8:£2.7050
    HGT1S10N120BNST
    DISTI # 8076660    		ON SemiconductorIGBTFAIRCHILDHGT1S10N120BNST, PK18
    • 400:£1.7550
    • 200:£2.0700
    • 40:£2.3850
    • 8:£2.7050
    • 2:£3.0250
    HGT1S10N120BNST
    DISTI # HGT1S10N120BNST    		ON SemiconductorTransistor: IGBT,1.2kV,17A,298W,D2PAK1049
    • 500:$1.1000
    • 100:$1.1800
    • 25:$1.3200
    • 5:$1.6300
    • 1:$1.9000
    HGT1S10N120BNST
    DISTI # XSKDRABV0048009    		ON SEMICONDUCTORDFlip-Flop,HC/UHSeries,1-Func,PositiveEdgeTriggered,8-Bit,TrueOutput,CMOS,PDSO20
    RoHS: Compliant    		1900 in Stock0 on Order
    • 1900:$1.4000
    • 800:$1.5000
    HGT1S10N120BNST
    DISTI # 2454176    		ON SemiconductorIGBT, SINGLE, 1.2KV, 35A, TO-263AB-3697
    • 500:£1.1100
    • 250:£1.4700
    • 100:£1.5600
    • 10:£1.7900
    • 1:£2.3700
    HGT1S10N120BNST
    DISTI # 2454176    		ON SemiconductorIGBT, SINGLE, 1.2KV, 35A, TO-263AB-3
    RoHS: Compliant    		496
    • 4800:$2.0300
    • 2400:$2.1100
    • 800:$2.2200
    • 500:$2.6400
    • 250:$2.9400
    • 100:$3.1000
    • 10:$3.5700
    • 1:$4.2000
    HGT1S10N120BNST
    DISTI # 2454176RL    		ON SemiconductorIGBT, SINGLE, 1.2KV, 35A, TO-263AB-3
    RoHS: Compliant    		0
    • 4800:$2.0300
    • 2400:$2.1100
    • 800:$2.2200
    • 500:$2.6400
    • 250:$2.9400
    • 100:$3.1000
    • 10:$3.5700
    • 1:$4.2000
    Сурет Бөлім № Сипаттама
    HGT1S10N120BNST

    Mfr.#: HGT1S10N120BNST

    OMO.#: OMO-HGT1S10N120BNST

    		 IGBT Transistors N-Channel IGBT NPT Series 1200V
    HGT1S10N120BNS

    Mfr.#: HGT1S10N120BNS

    OMO.#: OMO-HGT1S10N120BNS

    		 IGBT Transistors 35A 1200V NPT N-Ch
    HGT1S10N120BNST

    Mfr.#: HGT1S10N120BNST

    OMO.#: OMO-HGT1S10N120BNST-ON-SEMICONDUCTOR

    		 IGBT 1200V 35A 298W TO263AB
    HGT1S10N1208NST

    Mfr.#: HGT1S10N1208NST

    OMO.#: OMO-HGT1S10N1208NST-1190

    		 Жаңа және түпнұсқа
    HGT1S10N120BN

    Mfr.#: HGT1S10N120BN

    OMO.#: OMO-HGT1S10N120BN-1190

    		 Жаңа және түпнұсқа
    HGT1S10N120BNS

    Mfr.#: HGT1S10N120BNS

    OMO.#: OMO-HGT1S10N120BNS-ON-SEMICONDUCTOR

    		 IGBT 1200V 35A 298W TO263AB
    HGT1S10N50

    Mfr.#: HGT1S10N50

    OMO.#: OMO-HGT1S10N50-1190

    		 Жаңа және түпнұсқа
    HGT1S10N120BNS 10N120BN

    Mfr.#: HGT1S10N120BNS 10N120BN

    OMO.#: OMO-HGT1S10N120BNS-10N120BN-1190

    		 Жаңа және түпнұсқа
    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    3000
    Саны енгізіңіз:
    HGT1S10N120BNS ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    -ден бастаңыз
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