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IRL80HS120

IRL80HS120
Mfr. #:
IRL80HS120
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IRL80HS120 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IRL80HS120 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PQFN-6
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
80 V
Идентификатор - үздіксіз төгу тогы:
12.5 A
Rds On - ағызу көзіне қарсылық:
25 mOhms
Vgs th - Gate-Source шекті кернеуі:
1.1 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
7 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
11.5 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Ролик
Транзистор түрі:
1 N-Channel
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
14 S
Күз уақыты:
10 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
22 ns
Зауыттық буманың саны:
4000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
9.2 ns
Қосудың әдеттегі кешігу уақыты:
7.6 ns
Бөлім # Бүркеншік аттар:
SP001592838
Tags
IRL80, IRL8, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 80V 12.5A 6-Pin PQFN T/R
***ark
Mosfet, N-Ch, 80V, 12.5A, 11.5W, Pqfn; Transistor Polarity:n Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.025Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Rohs Compliant: Yes
***ineon
Available in three different voltage classes (60V, 80V and 100V), Infineons new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving. | Summary of Features: Lowest FOM (R DS(on) x Q g/gd); Optimized Q g, C oss, and Q rr for fast switching; Logic level compatibility; Tiny PQFN 2x2mm package | Benefits: Smallest package footprint; Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Telecom; Adapter
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
Бөлім № Mfg. Сипаттама Қор Бағасы
IRL80HS120
DISTI # V72:2272_17076878		Infineon Technologies AGTrans MOSFET N-CH Si 80V 6A 6-Pin PQFN EP T/R1300
  • 1000:$0.3584
  • 500:$0.4402
  • 250:$0.4906
  • 100:$0.4959
  • 25:$0.6155
  • 10:$0.6228
  • 1:$0.7116
IRL80HS120
DISTI # IRL80HS120CT-ND		Infineon Technologies AGMOSFET N-CH 80V 12.5A 6PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1896In Stock
  • 1000:$0.5051
  • 500:$0.6259
  • 100:$0.7920
  • 10:$0.9880
  • 1:$1.1100
IRL80HS120
DISTI # IRL80HS120DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 12.5A 6PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1896In Stock
  • 1000:$0.5051
  • 500:$0.6259
  • 100:$0.7920
  • 10:$0.9880
  • 1:$1.1100
IRL80HS120
DISTI # IRL80HS120TR-ND		Infineon Technologies AGMOSFET N-CH 80V 12.5A 6PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		On Order
  • 4000:$0.4611
IRL80HS120
DISTI # 26983824		Infineon Technologies AGTrans MOSFET N-CH Si 80V 6A 6-Pin PQFN EP T/R1300
  • 1000:$0.3584
  • 500:$0.4402
  • 250:$0.4906
  • 100:$0.4959
  • 25:$0.6155
  • 19:$0.6228
IRL80HS120
DISTI # IRL80HS120		Infineon Technologies AGTrans MOSFET 80V 12.5A 7-Pin PQFN T/R 4k - Tape and Reel (Alt: IRL80HS120)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 8000
  • 4000:$0.3439
  • 8000:$0.3399
  • 16000:$0.3389
  • 24000:$0.3379
  • 40000:$0.3369
IRL80HS120
DISTI # SP001592838		Infineon Technologies AGTrans MOSFET 80V 12.5A 7-Pin PQFN T/R 4k (Alt: SP001592838)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.4829
  • 8000:€0.3949
  • 16000:€0.3619
  • 24000:€0.3339
  • 40000:€0.3099
IRL80HS120
DISTI # 726-IRL80HS120		Infineon Technologies AGMOSFET
RoHS: Compliant		4796
  • 1:$0.8800
  • 10:$0.7470
  • 100:$0.5730
  • 500:$0.5070
  • 1000:$0.4000
IRL80HS120NPI
DISTI # TMOS2078		Infineon Technologies AGN-CH 80V 12A 32mOhm LLPQFN2X2
RoHS: Compliant		Stock DE - 100Stock US - 0
  • 1:$45.5400
  • 3:$42.9300
  • 8:$40.3300
  • 25:$36.4300
  • 72:$35.1300
IRL80HS120
DISTI # C1S322000655447		Infineon Technologies AGMOSFETs1300
  • 250:$0.5074
  • 100:$0.5087
  • 25:$0.6258
  • 10:$0.6281
IRL80HS120
DISTI # C1S322000672763		Infineon Technologies AGMOSFETs4000
  • 4000:$0.4280
IRL80HS120
DISTI # C1S322000653704		Infineon Technologies AGMOSFETs20
  • 10:$0.8040
Сурет Бөлім № Сипаттама
IRL100HS121

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OMO.#: OMO-IRL100HS121

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OMO.#: OMO-TPS63710DRRR-TEXAS-INSTRUMENTS

 IC REG BUCK ADJUSTABLE 1A 12SON
LM73605RNPR

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OMO.#: OMO-LM73605RNPR-TEXAS-INSTRUMENTS

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RC0402FR-0747KL

Mfr.#: RC0402FR-0747KL

OMO.#: OMO-RC0402FR-0747KL-YAGEO

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RC0402JR-070RL

Mfr.#: RC0402JR-070RL

OMO.#: OMO-RC0402JR-070RL-YAGEO

 Thick Film Resistors - SMD ZERO OHM JUMPER
RC0402FR-07100KL

Mfr.#: RC0402FR-07100KL

OMO.#: OMO-RC0402FR-07100KL-YAGEO

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Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1987
Саны енгізіңіз:
IRL80HS120 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,87 $
0,87 $
10
0,75 $
7,47 $
100
0,57 $
57,30 $
500
0,51 $
253,50 $
1000
0,40 $
400,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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