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FPF2G120BF07ASP

FPF2G120BF07ASP
Mfr. #:
FPF2G120BF07ASP
Өндіруші:
ON Semiconductor / Fairchild
Сипаттама:
IGBT Modules High Power Module
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
FPF2G120BF07ASP Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
FPF2G120BF07ASP Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ON Жартылай өткізгіш
Өнім санаты:
IGBT модульдері
RoHS:
Y
Өнім:
IGBT кремний модульдері
Конфигурация:
Үштік
Коллектор-эмиттер кернеуі VCEO Max:
650 V
Коллектор-эмиттер қанығу кернеуі:
1.55 V
Үздіксіз коллектор тогы 25 С:
40 A
Шлюз-эмиттер ағып кету тогы:
2 uA
Pd - қуаттың шығыны:
156 W
Пакет/қорап:
F2
Ең төменгі жұмыс температурасы:
- 40 C
Максималды жұмыс температурасы:
+ 150 C
Қаптама:
Науа
Серия:
FPF2G120BF07ASP
Бренд:
ON Semiconductor / Fairchild
Орнату стилі:
Шасси бекіткіші
Шықпа эмитентінің максималды кернеуі:
20 V
Өнім түрі:
IGBT модульдері
Зауыттық буманың саны:
70
Ішкі санат:
IGBT
Бірлік салмағы:
1.587328 oz
Tags
FPF2G, FPF2, FPF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
HPM(High Power Module) - HPM F2 PKG, 32LD, SOLDERING TERMINAL, 3CH BOOST MODULE, PCM
***emi
Power Integrated Module (PIM), F2, SiC Diode + IGBT, 650 V, 40 A with pre-applied thermal interface material
***et Europe
Trans IGBT Module N-CH 650V 40A 17-Pin Case F2
***rchild Semiconductor
The FPF2G120BF07ASP is the 3ch boost topology which is providing an optimized solution for the multi-string solar application. And the integrated high speed field stop IGBTs and SiC diodes are providing lower conduction and switching losses. And the pre-applied PCM requires no additional process of the thermal interface material printing. Furthermore, the screwclamp provides a fast and reliable mounting method.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
SiC Diodes and IGBT Power Integrated Modules
ON Semiconductor Silicon Carbide (SiC) Diodes and IGBT Power Integrated Modules (PIM) provide lower conduction and switching losses. These integrated high-speed field stop IGBT and SiC diodes feature built-in Negative Temperature Co-efficient (NTC) for temperature monitoring. The SiC diodes and IGBT PIMs are optimized for solar inverters, UPS, or power stages that need a more compact design.
Бөлім № Mfg. Сипаттама Қор Бағасы
FPF2G120BF07ASP
DISTI # V99:2348_14141234		ON SemiconductorHPM(HIGH POWER MODULE)70
  • 25:$102.0699
  • 10:$105.1900
  • 5:$108.7000
  • 1:$109.0800
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP-ND		ON SemiconductorIC LOAD SWITCH
RoHS: Compliant
Min Qty: 1
Container: Tray		70In Stock
  • 10:$103.6350
  • 1:$109.2800
FPF2G120BF07ASP
DISTI # 31085825		ON SemiconductorHPM(HIGH POWER MODULE)70
  • 1:$109.0800
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 - Trays (Alt: FPF2G120BF07ASP)
RoHS: Compliant
Min Qty: 70
Container: Tray		Americas - 0
  • 700:$84.8900
  • 420:$86.9900
  • 280:$89.1900
  • 140:$91.4900
  • 70:$92.6900
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 (Alt: FPF2G120BF07ASP)
RoHS: Compliant
Min Qty: 1
Container: Case		Europe - 0
  • 1000:€81.6900
  • 500:€82.1900
  • 100:€82.7900
  • 50:€83.3900
  • 25:€83.8900
  • 10:€84.4900
  • 1:€85.0900
FPF2G120BF07ASP
DISTI # 512-FPF2G120BF07ASP		ON SemiconductorIGBT Modules High Power Module
RoHS: Compliant		70
  • 1:$112.8000
  • 5:$110.7300
  • 10:$105.7500
  • 25:$102.2200
Сурет Бөлім № Сипаттама
FPF2G120BF07ASP

Mfr.#: FPF2G120BF07ASP

OMO.#: OMO-FPF2G120BF07ASP

 IGBT Modules High Power Module
FPF2G120BF07AS

Mfr.#: FPF2G120BF07AS

OMO.#: OMO-FPF2G120BF07AS

 IGBT Modules High Power Module
FPF2G120BF07AS

Mfr.#: FPF2G120BF07AS

OMO.#: OMO-FPF2G120BF07AS-ON-SEMICONDUCTOR

 IC LOAD SWITCH
FPF2G120BF07ASP

Mfr.#: FPF2G120BF07ASP

OMO.#: OMO-FPF2G120BF07ASP-ON-SEMICONDUCTOR

 IC LOAD SWITCH
Қол жетімділік
Қор:
70
Тапсырыс бойынша:
2053
Саны енгізіңіз:
FPF2G120BF07ASP ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
112,80 $
112,80 $
5
110,73 $
553,65 $
10
105,75 $
1 057,50 $
25
102,22 $
2 555,50 $
100
95,19 $
9 519,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
-ден бастаңыз
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