SI2399DS-T1-GE3

Mfr. #:: SI2399DS-T1-GE3
Өндіруші:: Vishay / Siliconix
Сипаттама:: MOSFET -20V Vds 12V Vgs SOT-23
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: SI2399DS-T1-GE3 Деректер тізімі
Жеткізу:: DHL FedEx Ups TNT EMS
Төлем:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI2399DS-T1-GE3 Datasheet SI2399DS-T1-GE3 Datasheet (P4-P6)SI2399DS-T1-GE3 Datasheet (P7-P9)SI2399DS-T1-GE3 Datasheet (P10)
ECAD Model:
Көбірек ақпарат:: SI2399DS-T1-GE3 Көбірек ақпарат

Өнім атрибуты
Төлсипат мәні

Өндіруші:: Вишай

Өнім санаты:: MOSFET

RoHS:: Y

Технология:: Си

Орнату стилі:: SMD/SMT

Пакет/қорап:: SOT-23-3

Арналар саны:: 1 Channel

Транзистордың полярлығы:: P-арна

Vds - ағызу көзінің бұзылу кернеуі:: 20 V

Идентификатор - үздіксіз төгу тогы:: 6 A

Rds On - ағызу көзіне қарсылық:: 34 mOhms

Vgs th - Gate-Source шекті кернеуі:: 600 mV

Vgs - Шлюз көзі кернеуі:: 10 V

Qg - қақпа заряды:: 10 nC

Ең төменгі жұмыс температурасы:: - 55 C

Максималды жұмыс температурасы:: + 150 C

Pd - қуаттың шығыны:: 2.5 W

Конфигурация:: Бойдақ

Арна режимі:: Жақсарту

Сауда атауы:: TrenchFET

Қаптама:: Ролик

Серия:: SI2

Транзистор түрі:: 1 P-Channel

Бренд:: Вишай / Силиконикс

Форвард өткізгіштік - Мин:: 15 S

Күз уақыты:: 9 ns

Өнім түрі:: MOSFET

Көтеру уақыты:: 20 ns

Зауыттық буманың саны:: 3000

Ішкі санат:: MOSFETs

Өшірудің әдеттегі кешігу уақыты:: 28 ns

Қосудың әдеттегі кешігу уақыты:: 22 ns

Бірлік салмағы:: 0.000282 oz

Tags: SI2399, SI239, SI23, SI2

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We provide 90-360 days warranty.

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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2399DS-T1-GE3 Сипаттама

***roFlash: MOSFET, P CH, W/D, 20V, 6A, SOT23; Transistor Polarity: P Channel; Continuous Dra

***et: Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R

***mal: P-Ch MOSFET SOT-23 20V 45mohm @ 4.5V

***ure Electronics: 20V, 6A, 34MOHM, P-CHANNEL, SOT-23

***nell: MOSFET, P CH, W/D, 20V, 6A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to +150°C

SI2399DS-T1-GE3 Көбірек ақпарат

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
SI2399DS-T1-GE3 DISTI # V72:2272_09216821	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R RoHS: Compliant	1304	1000:$0.1802 500:$0.2381 250:$0.2799 100:$0.2919 25:$0.3885 10:$0.4317 1:$0.5626
SI2399DS-T1-GE3 DISTI # V36:1790_09216821	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000000:$0.1500 1500000:$0.1502 300000:$0.1605 30000:$0.1765 3000:$0.1790
SI2399DS-T1-GE3 DISTI # SI2399DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 6A SOT-23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2382In Stock	1000:$0.2022 500:$0.2617 100:$0.3331 10:$0.4460 1:$0.5200
SI2399DS-T1-GE3 DISTI # SI2399DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 6A SOT-23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2382In Stock	1000:$0.2022 500:$0.2617 100:$0.3331 10:$0.4460 1:$0.5200
SI2399DS-T1-GE3 DISTI # SI2399DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 6A SOT-23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	30000:$0.1478 15000:$0.1559 6000:$0.1675 3000:$0.1790
SI2399DS-T1-GE3 DISTI # 33138233	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R RoHS: Compliant	3000	3000:$0.1688
SI2399DS-T1-GE3 DISTI # 32404567	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R RoHS: Compliant	1304	46:$0.5626
SI2399DS-T1-GE3 DISTI # SI2399DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R (Alt: SI2399DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1379 18000:€0.1489 12000:€0.1609 6000:€0.1869 3000:€0.2749
SI2399DS-T1-GE3 DISTI # SI2399DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2399DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SI2399DS-T1-GE3 DISTI # SI2399DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R (Alt: SI2399DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI2399DS-T1-GE3 DISTI # 64T4058	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 64T4058) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	500:$0.2800 250:$0.3060 100:$0.3310 50:$0.3650 25:$0.4000 10:$0.4340 1:$0.5650
SI2399DS-T1-GE3 DISTI # 99W9608	Vishay Intertechnologies	MOSFET Transistor, P Channel, -6 A, -20 V, 0.028 ohm, -10 V, -600 mV	0	50000:$0.1420 30000:$0.1490 20000:$0.1600 10000:$0.1710 5000:$0.1850 1:$0.1900
SI2399DS-T1-GE3 DISTI # 64T4058	Vishay Intertechnologies	MOSFET, P CHANNEL, -20V, -6A, SOT-23-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-6A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-600mV RoHS Compliant: Yes	9214	1000:$0.2160 500:$0.2690 250:$0.2930 100:$0.3180 50:$0.3510 25:$0.3840 10:$0.4160 1:$0.5420
SI2399DS-T1-GE3 DISTI # 78-SI2399DS-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs SOT-23 RoHS: Compliant	18872	1:$0.5200 10:$0.3970 100:$0.2940 500:$0.2420 1000:$0.1870 3000:$0.1700 6000:$0.1590 9000:$0.1480
SI2399DS-T1-GE3 DISTI # 1807277	Vishay Intertechnologies	P-CH MOSFET SOT-23 20V 45MOHM @ 4.5V, RL	2960	3000:£0.1450
SI2399DS-T1-GE3 DISTI # 2056681	Vishay Intertechnologies	MOSFET, P CH, W/D, 20V, 6A, SOT23	9983	500:£0.1890 250:£0.2100 100:£0.2300 10:£0.3470 1:£0.4730
SI2399DS-T1-GE3 DISTI # 2056681RL	Vishay Intertechnologies	MOSFET, P CH, W/D, 20V, 6A, SOT23 RoHS: Compliant	0	500:$0.3660 100:$0.4450 10:$0.6000 1:$0.7990
SI2399DS-T1-GE3 DISTI # 2056681	Vishay Intertechnologies	MOSFET, P CH, W/D, 20V, 6A, SOT23 RoHS: Compliant	9214	500:$0.3660 100:$0.4450 10:$0.6000 1:$0.7990
SI2399DS-T1-GE3 DISTI # C1S806001187986	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R RoHS: Compliant	1	1:$0.5190

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Қол жетімділік

Қор:: 18
Тапсырыс бойынша:: 2001
Саны енгізіңіз:

SI2399DS-T1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

Анықтамалық баға (USD)

Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы

1: ~~0,52 $~~; ~~0,52 $~~

10: ~~0,40 $~~; ~~3,97 $~~

100: ~~0,29 $~~; ~~29,40 $~~

500: ~~0,24 $~~; ~~121,00 $~~

1000: ~~0,19 $~~; ~~187,00 $~~

2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.

-ден бастаңыз

SI2399 3
SI239 6
SI23 561
SI2 1125

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SI2399DS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes