IXFH80N20Q

Mfr. #:: IXFH80N20Q
Өндіруші:: IXYS
Сипаттама:: MOSFET 200V 80A
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: IXFH80N20Q Деректер тізімі
Жеткізу:: DHL FedEx Ups TNT EMS
Төлем:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IXFH80N20Q Datasheet
ECAD Model:

Өнім атрибуты
Төлсипат мәні

Өндіруші: IXYS

Өнім санаты: FETs - жалғыз

Tags: IXFH80, IXFH8, IXFH, IXF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXFH80N20Q Сипаттама

***ical: Trans MOSFET N-CH Si 200V 80A 3-Pin(3+Tab) TO-247AD

***el Nordic: Contact for details

***icroelectronics: N-channel 200 V, 0.019 Ω, 83 A, TO-247 low gate charge STripFET™2; Power MOSFET

***ical: Trans MOSFET N-CH 200V 83A 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Power Field-Effect Transistor, 83A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, TO-247AD

*** Electronic Components: MOSFET N-channel 200V, 83A STripFET Mosfet

***el Electronic: CAP CER 0.068UF 630V X7R RADIAL

***trelec: MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 330 W

***ure Electronics: Single N-Channel 200 V 25 mOhm 70 nC HEXFET® Power Mosfet - TO-247AC

*** Source Electronics: Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 200V 65A TO-247AC

*** Stop Electro: Power Field-Effect Transistor, 65A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***ment14 APAC: MOSFET, N, 200V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Package / Case:TO-247; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:240V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 50A;TO-247AC;PD 300W;VGS +/-20V

***itex: Transistor: N-MOSFET; unipolar; 200V; 50A; 0.04ohm; 300W; -55+175 deg.C; THT; TO247AC

***ure Electronics: Single N-Channel 200V 0.04 Ohm 234 nC HEXFET® Power Mosfet - TO-247AC

***fin: Transistor NPN Mos IRFP260/IRFP260N INTERNATIONAL RECTIFIER Ampere=50 V=200 TO247

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***ment14 APAC: MOSFET, N, 200V, 49A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:200V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Junction to Case Thermal Resistance A:0.5°C/W; Package / Case:TO-247AC; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:200A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.023Ohm;ID 94A;TO-247AC;PD 580W;VGS +/-30V

***itex: Transistor: N-MOSFET; unipolar; 200V; 94A; 0.023ohm; 580W; -55+175 deg.C; THT; TO247AC

***eco: Transistor MOSFET N Channel 200 Volt 94 Amp 3-Pin 3+ Tab TO-247AC

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: TO-247 Power dissipation: 580 W

***ure Electronics: Single N-Channel 200 V 0.023 Ohm 270 nC HEXFET® Power Mosfet - TO-247AC

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

***ment14 APAC: MOSFET, N, 200V, 94A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:200V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:580W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:94A; Junction to Case Thermal Resistance A:0.26°C/W; On State resistance @ Vgs = 10V:23mohm; Package / Case:TO-247AC; Power Dissipation Pd:580W; Power Dissipation Pd:580W; Pulse Current Idm:380A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***ure Electronics: Single N-Channel 200 V 0.055 Ohms Flange Mount Power Mosfet - TO-247AC

***ser: Single-Gate MOSFET Transistors N-Chan 200V 46 Amp

***ical: Trans MOSFET N-CH 200V 46A 3-Pin (3+Tab) TO-247AC

***(Formerly Allied Electronics): Pwr MOSFET, 200V Single N-Ch. HEXFET; TO-247AC

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:46A; On Resistance, Rds(on):550mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ure Electronics: Single N-Channel 250 V 0.075 Ohms Flange Mount Power Mosfet - TO-247AC

*** Source Electronics: Trans MOSFET N-CH 250V 38A 3-Pin(3+Tab) TO-247AC / MOSFET N-CH 250V 38A TO-247AC

*** Stop Electro: Power Field-Effect Transistor, 38A I(D), 250V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***nell: MOSFET, N, 250V, 38A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:250V; Current, Id Cont:38A; Resistance, Rds On:0.075ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:150A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:280W; Power, Pd:280W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.45°C/W; Transistors, No. of:1; Voltage, Vds Max:250V

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
IXFH80N20Q DISTI # IXFH80N20Q-ND	IXYS Corporation	MOSFET N-CH 200V 80A TO-247AD RoHS: Compliant Min Qty: 30 Container: Tube	Limited Supply - Call
IXFH80N20Q	IXYS Corporation	* FREE SHIPPING ORDERS OVER $100 *	34	22:$22.0817 11:$23.3084 1:$24.5352

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: IXFH88N30P OMO.#: OMO-IXFH88N30P	MOSFET 88 Amps 300V 0.04 Rds
	Mfr.#: IXFH86N30T OMO.#: OMO-IXFH86N30T	MOSFET Trench HiperFET Power MOSFET
	Mfr.#: IXFH80N30P3 OMO.#: OMO-IXFH80N30P3	MOSFET Polar3 HiPerFET Power MOSFET
	Mfr.#: IXFH8N80 OMO.#: OMO-IXFH8N80	MOSFET 8 Amps 800V 1.1 Rds
	Mfr.#: IXFH88N20Q OMO.#: OMO-IXFH88N20Q	MOSFET 88 Amps 200V 0.03 Rds
	Mfr.#: IXFH80N65X2 OMO.#: OMO-IXFH80N65X2-IXYS-CORPORATION	MOSFET N-CH 650V 80A TO-247
	Mfr.#: IXFH80N06 OMO.#: OMO-IXFH80N06-IXYS-CORPORATION	MOSFET N-CH 60V 80A TO-247
	Mfr.#: IXFH80N08 OMO.#: OMO-IXFH80N08-IXYS-CORPORATION	MOSFET N-CH 80V 80A TO-247
	Mfr.#: IXFH86N30T OMO.#: OMO-IXFH86N30T-IXYS-CORPORATION	Darlington Transistors MOSFET Trench HiperFET Power MOSFET
	Mfr.#: IXFH80N15Q OMO.#: OMO-IXFH80N15Q-IXYS-CORPORATION	MOSFET 80 Amps 150V 0.0225 Rds

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 2500
Саны енгізіңіз:

IXFH80N20Q ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

Анықтамалық баға (USD)

Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы

1: ~~33,12 $~~; ~~33,12 $~~

10: ~~31,47 $~~; ~~314,66 $~~

100: ~~29,81 $~~; ~~2 981,03 $~~

500: ~~28,15 $~~; ~~14 077,10 $~~

1000: ~~26,50 $~~; ~~26 498,00 $~~

-ден бастаңыз

IXFH80 14
IXFH8 19
IXFH 291
IXF 1494

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IXFH80N20Q

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes