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Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
---|---|---|---|---|
SI4900DY-T1-GE3 DISTI # V72:2272_09216636 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant | 304 |
|
SI4900DY-T1-GE3 DISTI # V36:1790_09216636 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant | 0 |
|
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3CT-ND | Vishay Siliconix | MOSFET 2N-CH 60V 5.3A 8-SOIC Min Qty: 1 Container: Cut Tape (CT) | 2907In Stock |
|
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET 2N-CH 60V 5.3A 8-SOIC Min Qty: 1 Container: Digi-Reel® | 2907In Stock |
|
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3TR-ND | Vishay Siliconix | MOSFET 2N-CH 60V 5.3A 8-SOIC Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
SI4900DY-T1-GE3 DISTI # 27121565 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant | 304 |
|
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R (Alt: SI4900DY-T1-GE3) Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4900DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
SI4900DY-T1-GE3 DISTI # 15R5113 | Vishay Intertechnologies | DUAL N CHANNEL MOSFET, 60V, 5.3A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.046ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V RoHS Compliant: Yes RoHS: Compliant | 0 |
|
SI4900DY-T1-GE3 DISTI # 23T8519 | Vishay Intertechnologies | MOSFET Transistor, Dual N Channel, 5.3 A, 60 V, 0.046 ohm, 10 V, 2.5 V RoHS Compliant: Yes RoHS: Compliant | 2706 |
|
SI4900DY-T1-GE3 DISTI # 781-SI4900DY-GE3 | Vishay Intertechnologies | MOSFET 60V 5.3A 3.1W 58mohm @ 10V RoHS: Compliant | 3082 |
|
SI4900DY-T1-GE3 DISTI # 1653003 | Vishay Intertechnologies | On a Reel of 2500, SI4900DY-T1-GE3 Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC Vishay, RL Min Qty: 2500 Container: Reel | 0 |
|
SI4900DY-T1-GE3 DISTI # 7103364 | Vishay Intertechnologies | In a Pack of 10, SI4900DY-T1-GE3 Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC Vishay, PK Min Qty: 10 Container: Package | 30 |
|
SI4900DYT1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant | Europe - 2500 | |
SI4900DY-T1-GE3 DISTI # 1858965RL | Vishay Intertechnologies | MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC RoHS: Compliant | 0 |
|
SI4900DY-T1-GE3 DISTI # 1858965 | Vishay Intertechnologies | MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC RoHS: Compliant | 2706 |
|
SI4900DY-T1-GE3 DISTI # 1858965RL | Vishay Intertechnologies | MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC RoHS: Compliant | 0 |
|
SI4900DY-T1-GE3 DISTI # 1858965 | Vishay Intertechnologies | MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC RoHS: Compliant | 2821 |
|
Сурет | Бөлім № | Сипаттама |
---|---|---|
Mfr.#: SIQ004DN OMO.#: OMO-SIQ004DN-1190 |
Жаңа және түпнұсқа | |
Mfr.#: SIQ004DN-T1-GE3 OMO.#: OMO-SIQ004DN-T1-GE3-1190 |
Жаңа және түпнұсқа |