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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| FQB55N06TM DISTI # FQB55N06TM-ND | ON Semiconductor | MOSFET N-CH 60V 55A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | Limited Supply - Call | |
| FQB55N06TM DISTI # 512-FQB55N06TM | ON Semiconductor | MOSFET 60V N-Channel QFET RoHS: Compliant | 0 | |
| FQB55N06TM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 55A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1896 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: FQB55N10TM OMO.#: OMO-FQB55N10TM |
MOSFET 100V N-Channel QFET |
|
Mfr.#: FQB55N06 OMO.#: OMO-FQB55N06-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: FQB55N06TM |
MOSFET N-CH 60V 55A D2PAK |
|
|
Mfr.#: FQB55N06TM-NL OMO.#: OMO-FQB55N06TM-NL-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: FQB55N10 OMO.#: OMO-FQB55N10-1190 |
MOSFET, N, D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:55A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.026ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage |
|
|
Mfr.#: FQB55N10TM |
MOSFET N-CH 100V 55A D2PAK |
|
|
Mfr.#: FQB55N10TM-NL OMO.#: OMO-FQB55N10TM-NL-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: FQB55N10TMCT-ND OMO.#: OMO-FQB55N10TMCT-ND-1190 |
Жаңа және түпнұсқа |