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KSP45BU

KSP45BU
Mfr. #:
KSP45BU
Өндіруші:
ON Semiconductor / Fairchild
Сипаттама:
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
KSP45BU Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ON Жартылай өткізгіш
Өнім санаты:
Биполярлы транзисторлар - BJT
RoHS:
Y
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-92-3
Транзистордың полярлығы:
NPN
Конфигурация:
Бойдақ
Коллектор-эмиттер кернеуі VCEO Max:
350 V
Коллектор – базалық кернеу VCBO:
400 V
Эмитент – базалық кернеу VEBO:
6 V
Коллектор-эмиттер қанығу кернеуі:
0.75 V
Тұрақты ток коллекторының максималды тогы:
0.3 A
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Серия:
KSP45
Тұрақты ток күші hFE макс:
200
Биіктігі:
4.7 mm
Ұзындығы:
4.7 mm
Қаптама:
Жаппай
Ені:
3.93 mm
Бренд:
ON Semiconductor / Fairchild
Үздіксіз коллекторлық ток:
0.3 A
Тұрақты ток коллекторы/негізгі күшеюі hfe Мин:
50
Pd - қуаттың шығыны:
625 mW
Өнім түрі:
BJTs - Биполярлы транзисторлар
Зауыттық буманың саны:
1000
Ішкі санат:
Транзисторлар
Бірлік салмағы:
0.006286 oz
Tags
KSP45, KSP4, KSP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Bipolar (BJT) Transistor NPN 350V 300mA 625mW Through Hole TO-92-3
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200 mA 40 V NPN Si SMALL SIGNAL TRANSISTOR TO-92
***nell
TRANSISTOR, N CH 100MA TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: -; Power Dissipation Pd: 625mW; DC Collector Current: 200mA; DC Current Gain hFE: 150hFE; RF Transistor
***ark
RF Bipolar Transistor; Transistor Polarity:N Channel; Package/Case:TO-92; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):15; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; C-E Breakdown Voltage:40V ;RoHS Compliant: Yes
***S.I.T. Europe - USA - Asia
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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2N4401 Series 40 V CE Breakdown 0.6 A NPN General Purpose Amplifier - TO-92
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NPN Bipolar Junction Transistor, TO-92
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Trans GP BJT NPN 40V 0.6A 625mW 3-Pin TO-92 Bag
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TRANSISTOR, NPN, 40V, 0.6A, TO-226AA; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:600mA; Power Dissipation:625mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
***ment14 APAC
TRANSISTOR, NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:625mW; DC Collector Current:600mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:750mV; Current Ic Continuous a Max:600mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:20; Package / Case:TO-92; Power Dissipation Pd:625mW; Termination Type:Through Hole
***S.I.T. Europe - USA - Asia
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
***Yang
Bipolar Transistors - BJT NPN Transistor General Purpose
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Trans GP BJT NPN 40V 0.6A 625mW 3-Pin TO-92 Fan-Fold
***emi
NPN Bipolar Junction Transistor, TO-92
***ure Electronics
2N4401 Series 40 V CE Breakdown 0.6 A NPN General Purpose Amplifier - TO-92
***i-Key
TRANSISTOR NPN 40V 600MA TO-92
***nell
TRANSISTOR, BIPOL, NPN, 40V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 625mW; DC Collector Current: -; DC Current Gain hFE: 20hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
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Bipolar (BJT) Transistor NPN 20V 500mA 625mW Through Hole TO-92-3
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Trans GP BJT NPN 20V 0.5A 3-Pin TO-92 Ammo
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Bipolar (BJT) Transistor NPN 20V 500mA 625mW Through Hole TO-92-3
***ical
Trans GP BJT NPN 20V 0.5A 3-Pin TO-92 Bulk
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Bipolar Transistors - BJT PNP/40V/0.5A
***Yang
Bipolar (BJT) Transistor NPN 20V 500mA 625mW Through Hole TO-92-3 - Bulk
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Trans GP BJT NPN 20V 0.5A 3-Pin TO-92 Bulk
*** Electronic Components
Bipolar Transistors - BJT PNP/40V/0.5A
Бөлім № Mfg. Сипаттама Қор Бағасы
KSP45BU
DISTI # KSP45BU-ND		ON SemiconductorTRANS NPN 350V 0.3A TO-92
RoHS: Compliant
Min Qty: 10000
Container: Bulk		Limited Supply - Call
    KSP45BU
    DISTI # 512-KSP45BU    		ON SemiconductorBipolar Transistors - BJT NPN Si Transistor Epitaxial
    RoHS: Compliant    		0
      KSP45BUFairchild Semiconductor CorporationSmall Signal Bipolar Transistor, 0.3A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
      RoHS: Compliant      		209000
      • 100:$0.0400
      • 500:$0.0400
      • 1000:$0.0400
      • 1:$0.0500
      • 25:$0.0500
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      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      2500
      Саны енгізіңіз:
      KSP45BU ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      -ден бастаңыз
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