OMO ElectronicOMO Electronic
Expand menu
0 Арба

IPB110N20N3LFATMA1

IPB110N20N3LFATMA1
Mfr. #:
IPB110N20N3LFATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPB110N20N3LFATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TO-263-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
200 V
Идентификатор - үздіксіз төгу тогы:
88 A
Rds On - ағызу көзіне қарсылық:
9.8 mOhms
Vgs th - Gate-Source шекті кернеуі:
2.2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
76 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
250 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
Optimos
Қаптама:
Ролик
Серия:
Optimos 5
Транзистор түрі:
1 N-Channel
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
16 S
Күз уақыты:
26 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
70 ns
Зауыттық буманың саны:
1000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
79 ns
Қосудың әдеттегі кешігу уақыты:
6 ns
Бөлім # Бүркеншік аттар:
IPB110N20N3LF SP001503864
Бірлік салмағы:
0.077603 oz
Tags
IPB110, IPB11, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N-CH 200 D2PAK-3
***ronik
N-CH 200V 88A 11mOhm D2PAK
***et Europe
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 200V, 88A, 250W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.0098Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 88A, 250W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0098ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 200V, 88A, 250W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:88A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.0098ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.2V; Dissipazione di Potenza Pd:250W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 3 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. | Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management
Бөлім № Mfg. Сипаттама Қор Бағасы
IPB110N20N3LFATMA1
DISTI # V72:2272_17076776		Infineon Technologies AGDIFFERENTIATED MOSFETS58
  • 25:$5.6780
  • 10:$5.9310
  • 1:$6.5000
IPB110N20N3LFATMA1
DISTI # V36:1790_17076776		Infineon Technologies AGDIFFERENTIATED MOSFETS0
    IPB110N20N3LFATMA1
    DISTI # IPB110N20N3LFATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 200 D2PAK-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2966In Stock
    • 500:$5.1425
    • 100:$6.1379
    • 10:$7.4650
    • 1:$8.2900
    IPB110N20N3LFATMA1
    DISTI # IPB110N20N3LFATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 200 D2PAK-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2966In Stock
    • 500:$5.1425
    • 100:$6.1379
    • 10:$7.4650
    • 1:$8.2900
    IPB110N20N3LFATMA1
    DISTI # IPB110N20N3LFATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 200 D2PAK-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		2000In Stock
    • 2000:$4.1875
    • 1000:$4.3485
    IPB110N20N3LFATMA1
    DISTI # 26196752    		Infineon Technologies AGDIFFERENTIATED MOSFETS58
    • 25:$6.1039
    • 10:$6.3758
    • 2:$6.9875
    IPB110N20N3LFATMA1
    DISTI # SP001503864    		Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: SP001503864)
    RoHS: Compliant
    Min Qty: 1000    		Europe - 1000
    • 1000:€3.8900
    • 2000:€3.7900
    • 4000:€3.5900
    • 6000:€3.3900
    • 10000:€3.0900
    IPB110N20N3LFATMA1
    DISTI # IPB110N20N3LFATMA1    		Infineon Technologies AGDIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB110N20N3LFATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 1000:$4.1900
    • 2000:$3.9900
    • 4000:$3.8900
    • 6000:$3.6900
    • 10000:$3.6900
    IPB110N20N3LFATMA1
    DISTI # 93AC7102    		Infineon Technologies AGMOSFET, N-CH, 200V, 88A, 250W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:88A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0098ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.2V,Power RoHS Compliant: Yes1000
    • 500:$3.6200
    • 250:$3.9800
    • 100:$4.1700
    • 50:$4.4800
    • 25:$4.8000
    • 10:$5.0300
    • 1:$5.5700
    IPB110N20N3LFATMA1
    DISTI # 726-IPB110N20N3LFATM    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		1825
    • 1:$6.9600
    • 10:$6.2900
    • 25:$6.0000
    • 100:$5.2100
    • 250:$4.9700
    • 500:$4.5300
    • 1000:$3.9500
    • 2000:$3.8000
    IPB110N20N3LFATMA1
    DISTI # XSKDRABV0021212    		Infineon Technologies AG 
    RoHS: Compliant    		3000 in Stock0 on Order
    • 3000:$6.0000
    • 1000:$6.4320
    IPB110N20N3LFATMA1
    DISTI # 2986460    		Infineon Technologies AGMOSFET, N-CH, 200V, 88A, 250W, TO-263
    RoHS: Compliant    		1000
    • 100:£4.0100
    • 50:£4.3300
    • 10:£4.6400
    • 5:£5.3500
    • 1:£5.8300
    IPB110N20N3LFATMA1
    DISTI # 2986460    		Infineon Technologies AGMOSFET, N-CH, 200V, 88A, 250W, TO-263
    RoHS: Compliant    		1000
    • 100:$5.9000
    • 50:$6.5880
    • 25:$7.6494
    • 10:$7.7958
    • 5:$8.3997
    • 1:$9.3147
    Сурет Бөлім № Сипаттама
    ATSAMC21E18A-MUT

    Mfr.#: ATSAMC21E18A-MUT

    OMO.#: OMO-ATSAMC21E18A-MUT

    		 ARM Microcontrollers - MCU 32QFN,85C TEMP, GREEN, 5V, 48MHZ, T&R
    LTC7810ILXE#PBF

    Mfr.#: LTC7810ILXE#PBF

    OMO.#: OMO-LTC7810ILXE-PBF

    		 Switching Controllers 150V L IQ, 2x, 2-PhSync Buck DC/DC Cntr
    UCC24612-1DBVT

    Mfr.#: UCC24612-1DBVT

    OMO.#: OMO-UCC24612-1DBVT

    		 Switching Controllers SYNC RECTIFIER FLYBACK
    08-55-0102

    Mfr.#: 08-55-0102

    OMO.#: OMO-08-55-0102

    		 Headers & Wire Housings CRIMP TERM SEL GLD 22-30 AWG
    OPA2376QDGKRQ1

    Mfr.#: OPA2376QDGKRQ1

    OMO.#: OMO-OPA2376QDGKRQ1

    		 Precision Amplifiers Low Noise, Low Quiescent Current, Precision Operational Amplifier e-trim/trade 8-VSSOP -40 to 125
    OPA2376QDGKRQ1

    Mfr.#: OPA2376QDGKRQ1

    OMO.#: OMO-OPA2376QDGKRQ1-TEXAS-INSTRUMENTS

    		 Precision Amplifiers Low Noise, Low Quiescent Current, Precision Operational Amplifier e-trim/trade 8-VSSOP -40 to 125
    ATSAMC21E18A-MUT

    Mfr.#: ATSAMC21E18A-MUT

    OMO.#: OMO-ATSAMC21E18A-MUT-MICROCHIP-TECHNOLOGY

    		 Microcontrollers - MCU ARM Microcontrollers - MCU Cortex-M0+, 256KB FLASH,32KB SRAM - 32QFN,85C TEMP, GREEN, 5V, 48MHZ, T&R
    08-55-0102

    Mfr.#: 08-55-0102

    OMO.#: OMO-08-55-0102-MOLEX

    		 Headers & Wire Housings CRIMP TERM SEL GLD 22-30 AWG
    UCC24612-1DBVT

    Mfr.#: UCC24612-1DBVT

    OMO.#: OMO-UCC24612-1DBVT-TEXAS-INSTRUMENTS

    		 HIGH-FREQUENCY MULTI-MODE SYNCHR
    UCC5350MCDR

    Mfr.#: UCC5350MCDR

    OMO.#: OMO-UCC5350MCDR-TEXAS-INSTRUMENTS

    		 DGTL ISO 3KV 1CH GATE DRVR 8SOIC
    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    1984
    Саны енгізіңіз:
    IPB110N20N3LFATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    6,96 $
    6,96 $
    10
    6,29 $
    62,90 $
    25
    6,00 $
    150,00 $
    100
    5,21 $
    521,00 $
    250
    4,97 $
    1 242,50 $
    500
    4,53 $
    2 265,00 $
    -ден бастаңыз
    Ең жаңа өнімдер
    More Newest Products
    Top