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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BSC025N03MSGATMA1 DISTI # BSC025N03MSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 5463In Stock |
|
| BSC025N03MSGATMA1 DISTI # BSC025N03MSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 5463In Stock |
|
| BSC025N03MSGATMA1 DISTI # BSC025N03MSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 5000In Stock |
|
| BSC025N03MSGXT DISTI # BSC025N03MSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP - Tape and Reel (Alt: BSC025N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 5000 |
|
| BSC025N03MS G DISTI # BSC025N03MS G | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R (Alt: BSC025N03MS G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 |
|
| BSC025N03MSGATMA1 DISTI # SP000311505 | Infineon Technologies AG | Trans MOSFET N-CH 30V 23A 8-Pin TDSON T/R (Alt: SP000311505) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
| BSC025N03MSGATMA1 DISTI # 60R2482 | Infineon Technologies AG | MOSFET, N CHANNEL, 30V, 100A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0021ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes | 1329 |
|
| BSC025N03MS G DISTI # 726-BSC025N03MSG | Infineon Technologies AG | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M RoHS: Compliant | 4599 |
|
| BSC025N03MSGATMA1 DISTI # 726-BSC025N03MSGATMA | Infineon Technologies AG | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M RoHS: Compliant | 5237 |
|
| BSC025N03MSG | Infineon Technologies AG | Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 886 |
|
| BSC025N03MS | Infineon Technologies AG | 1975 | ||
| BSC025N03MSG | Infineon Technologies AG | 60 |
| |
| BSC025N03MSGATMA1 DISTI # BSC025N03MSGATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,23A,83W,PG-TDSON-8 | 2480 |
|
| BSC025N03MSG | Infineon Technologies AG | 101 | ||
| BSC025N03MSGATMA1 DISTI # 1775433 | Infineon Technologies AG | MOSFET, N CH, 100A, 30V, PG-TDSON-8 RoHS: Compliant | 1329 |
|
| BSC025N03MSGATMA1 DISTI # 1775433 | Infineon Technologies AG | MOSFET, N CH, 100A, 30V, PG-TDSON-8 RoHS: Compliant | 1329 |
|
| BSC025N03MSG | Infineon Technologies AG | 30V,100A,N-channel power MOSFET | 100 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: 025N03LS OMO.#: OMO-025N03LS-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: 025N03M OMO.#: OMO-025N03M-1190 |
Жаңа және түпнұсқа |
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Mfr.#: 025N03MS OMO.#: OMO-025N03MS-1190 |
Жаңа және түпнұсқа |
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Mfr.#: 025N03MSG OMO.#: OMO-025N03MSG-1190 |
Жаңа және түпнұсқа |
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Mfr.#: 025N06N OMO.#: OMO-025N06N-1190 |
Жаңа және түпнұсқа |
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Mfr.#: 025N08N OMO.#: OMO-025N08N-1190 |
Жаңа және түпнұсқа |
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Mfr.#: 025N10 OMO.#: OMO-025N10-1190 |
Жаңа және түпнұсқа |
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Mfr.#: 025N10N OMO.#: OMO-025N10N-1190 |
Жаңа және түпнұсқа |
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Mfr.#: 025N30LS OMO.#: OMO-025N30LS-1190 |
Жаңа және түпнұсқа |