HGTD3N60B3S

HGTD3N60B3S
Mfr. #:
HGTD3N60B3S
Өндіруші:
Rochester Electronics, LLC
Сипаттама:
Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
HGTD3N60B3S Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Tags
HGTD3, HGTD, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA
***i-Key
7A, 600V, UFS N-CHANNEL IGBT
***ponent Stockers USA
7 A 600 V N-CHANNEL IGBT
***el Nordic
Contact for details
Бөлім № Mfg. Сипаттама Қор Бағасы
HGTD3N60B3SHarris SemiconductorInsulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA
RoHS: Not Compliant
944
  • 1000:$0.4700
  • 500:$0.5000
  • 100:$0.5200
  • 25:$0.5400
  • 1:$0.5800
HGTD3N60B3S9AHarris SemiconductorInsulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA
RoHS: Not Compliant
2500
  • 1000:$0.4700
  • 500:$0.5000
  • 100:$0.5200
  • 25:$0.5400
  • 1:$0.5800
HGTD3N60B3SHARTING Technology Group 
RoHS: Not Compliant
1800
    Сурет Бөлім № Сипаттама
    HGTD3N60A4S

    Mfr.#: HGTD3N60A4S

    OMO.#: OMO-HGTD3N60A4S-1190

    600V, SMPS Series N-Channel IGBT - Bulk (Alt: HGTD3N60A4S)
    HGTD3N60B3S

    Mfr.#: HGTD3N60B3S

    OMO.#: OMO-HGTD3N60B3S-1190

    Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA
    HGTD3N60C3

    Mfr.#: HGTD3N60C3

    OMO.#: OMO-HGTD3N60C3-1190

    Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251AA
    HGTD3N60C3D

    Mfr.#: HGTD3N60C3D

    OMO.#: OMO-HGTD3N60C3D-1190

    Жаңа және түпнұсқа
    HGTD3N60C3S

    Mfr.#: HGTD3N60C3S

    OMO.#: OMO-HGTD3N60C3S-1190

    - Bulk (Alt: HGTD3N60C3S)
    HGTD3N60C3S9A

    Mfr.#: HGTD3N60C3S9A

    OMO.#: OMO-HGTD3N60C3S9A-ON-SEMICONDUCTOR

    IGBT 600V 6A 33W TO252AA
    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    3000
    Саны енгізіңіз:
    HGTD3N60B3S ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    0,00 $
    0,00 $
    10
    0,00 $
    0,00 $
    100
    0,00 $
    0,00 $
    500
    0,00 $
    0,00 $
    1000
    0,00 $
    0,00 $
    -ден бастаңыз
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